polyfet rf devices
LB401
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet"
TM
process features
low feedback and output capacitances,
resulting in high F
t
transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
130.0 Watts Push - Pull
Package Style LB
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
230 Watts
Junction to
Case Thermal
Resistance
o
0.75 C/W
Maximum
Junction
Temperature
o
200 C
Storage
Temperature
o
o
-65 C to 150 C
DC Drain
Current
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70 V
Gate to
Source
Voltage
20 V
13.5 A
RF CHARACTERISTICS ( 130.0 WATTS OUTPUT )
SYMBOL PARAMETER
Gps
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
MIN
14
55
10:1
TYP
MAX
UNITS TEST CONDITIONS
dB
%
Relative
Idq = 0.40 A, Vds =
Idq = 0.40 A, Vds =
28.0
V, F =
500
MHz
28.0
V, F =
500
MHz
500
MHz
η
VSWR
Idq = 0.40 A, Vds =
28.0
V, F =
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
2
2.7
0.28
17.00
80.0
4.0
50.0
MIN
65
1.0
1
5
TYP
MAX
UNITS TEST CONDITIONS
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
Ids = 25.00 mA, Vgs = 0V
Vds = 28.0 V, Vgs = 0V
Vds = 0V Vgs = 30V
Ids = 0.30 A, Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 8.00 A
Vgs = 20V, Vds = 10V
Vds = 28.0 Vgs = 0V, F = 1 MHz
Vds = 28.0 Vgs = 0V, F = 1 MHz
Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com
LB401
POUT VS PIN GRAPH
LB 4 0 1 F re q =5 0 0 M H z, V d s =2 8 V d c , Id q =.8 A
160
140
120
100
80
60
40
20
0
0
1
2
3
4
5
6
P in in W a tts
7
8
9
10
Efficiency@100W = 55%
Gain
P out
19
18
1000
CAPACITANCE VS VOLTAGE
L4 1 DIE CAPACITANCE
Coss
17
100
16
15
14
13
12
11
1
0
2.5
5
7.5
10
12.5
15
17.5
20
22.5
25
27.5
30
10
Ciss
Crss
VDS IN VOLTS
IV CURVE
L4B 1 DIE IV
18
16
14
ID & GM VS VGS
100.00
L4B 1 DIE ID & GM Vs VG
Id
Id in amps; Gm in mhos
10.00
ID IN AMPS
12
10
8
6
4
2
0
0
vg=2v
2
4
Vg=4v
6
8
10
12
14
VDS
Vg=6v
IN VOLTS
vg=8v
16
0
18
20
vg=12v
1.00
gM
0.10
0
2
4
6
8
10
12
Vgs in Volts
14
16
18
20
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
.XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com
