polyfet rf devices
LB501
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet"
TM
process features
low feedback and output capacitances,
resulting in high F
t
transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
175.0 Watts Push - Pull
Package Style LB
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
440 Watts
Junction to
Case Thermal
Resistance
o
0.44 C/W
Maximum
Junction
Temperature
o
200 C
Storage
Temperature
o
o
-65 C to 150 C
DC Drain
Current
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70 V
Gate to
Source
Voltage
20 V
23.0 A
RF CHARACTERISTICS ( 175.0 WATTS OUTPUT )
SYMBOL PARAMETER
Gps
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
MIN
13
50
10:1
TYP
MAX
UNITS TEST CONDITIONS
dB
%
Relative
Idq = 0.80 A, Vds =
Idq = 0.80 A, Vds =
28.0
V, F =
500
MHz
28.0
V, F =
500
MHz
500
MHz
η
VSWR
Idq = 0.80 A, Vds =
28.0
V, F =
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
2
4.8
0.30
30.00
150.0
7.5
100.0
MIN
65
1.0
1
5
TYP
MAX
UNITS TEST CONDITIONS
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
Ids = 50.00 mA, Vgs = 0V
Vds = 28.0 V, Vgs = 0V
Vds = 0V Vgs = 30V
Ids = 0.30 A, Vgs = Vds
Vds = 10V, Vgs = 5V
13.00 A
Vgs = 20V, Ids =
Vgs = 20V, Vds = 10V
Vds = 28.0 Vgs = 0V, F = 1 MHz
Vds = 28.0 Vgs = 0V, F = 1 MHz
Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com
LB501
POUT VS PIN GRAPH
LB501 F=500M H z; V ds=28V dc, Idq=1.2A
210
180
150
120
90
Gain
60
30
0
0
4
8
12
P in in W a tts
16
20
Efficiency @180W = 55%
12
11
10
1
0
2.5
5
7.5
10
12.5
15
17.5
20
22.5
25
27.5
30
CAPACITANCE VS VOLTAGE
17
16
Pout
15
100
1000
L5 1 DIE CAPACITANCE
Coss
14
13
10
Ciss
Crss
VDS IN VOLTS
IV CURVE
L5B 1DIE IV
40
35
30
ID & GM VS VGS
100.00
L5B 1 DIE ID & GM Vs VG
Id in amps; Gm in mhos
Id
10.00
ID IN AMPS
25
20
15
10
5
0
0
vg=2v
2
4
Vg=4v
6
8
10
12
VDS IN VOLTS
14
16
0
18
20
vg=12v
1.00
gM
0.10
0
2
4
6
Vg=6v
vg=8v
8 10 12
Vgs in Volts
14
16
18
20
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
.XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com
