LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
•
Moisture Sensitivity Level: 1
•
ESD Rating – Human Body Model: >4000 V
ESD Rating
– Machine Model: >400 V
•
Pb-Free Packages are Available
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
Collector–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
Emitter–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
Collector Current – Continuous
IC
VEBO
6.0
6.0
5.0
100
mAdc
VCBO
80
50
30
Vdc
2
EMIT T ER
1
LBC846ALT1
Series
3
Symbol
VCEO
Value
65
45
30
Unit
Vdc
2
SOT–23
Vdc
3
COLLECT OR
1
B ASE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 1.)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 1.)
Total Device Dissipation
Alumina Substrate (Note 2.)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 2.)
Junction and Storage
Temperature Range
Symbol
PD
Max
225
Unit
mW
MARKING DIAGRAM
3
xx
1.8
R
qJA
PD
556
300
mW/°C
°C/W
mW
xx= Device Marking
(See Table Below)
2.4
R
qJA
TJ, Tstg
417
–55 to
+150
mW/°C
°C/W
°C
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
LBC846ALT1S-1/6
LESHAN RADIO COMPANY, LTD.
LBC846ALT1 Series
DEVICE MARKING AND ORDERING INFORMATION
Device
LBC846ALT1
LBC846ALT1G
LBC846BLT1
LBC846BLT1G
LBC847ALT1
LBC847ALT1G
LBC847BLT1
LBC847BLT1G
LBC847CLT1
LBC847CLT1G
LBC848ALT1
LBC848ALT1G
LBC848BLT1
LBC848BLT1G
LBC848CLT1
LBC848CLT1G
LBC849BLT1
LBC849BLT1G
LBC849CLT1
LBC849CLT1G
LBC850BLT1
LBC850BLT1G
LBC850CLT1
LBC850CLT1G
Marking
1A
1A
(Pb-Free)
1B
1B
(Pb-Free)
1E
1E
(Pb-Free)
1F
1F
(Pb-Free)
1G
1G
(Pb-Free)
1J
1J
(Pb-Free)
1K
1K
(Pb-Free)
1L
1L
(Pb-Free)
2B
2B
(Pb-Free)
2C
2C
(Pb-Free)
2F
2F
(Pb-Free)
2G
2G
(Pb-Free)
Package
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
LBC846ALT1S-2/6
LESHAN RADIO COMPANY, LTD.
LBC846ALT1 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
LBC846A,B
(IC = 10 mA)
LBC847A,B,C, LBC850B,C
LBC848A,B,C, LBC849B,C
Collector–Emitter Breakdown Voltage
LBC846A,B
(IC = 10
µA,
VEB = 0)
LBC847A,B,C, LBC850B,C
LBC848A,B,C, LBC849B,C
Collector–Base Breakdown Voltage
(IC = 10
mA)
Emitter–Base Breakdown Voltage
(IE = 1.0
mA)
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
LBC846A,B
LBC847A,B,C, LBC850B,C
LBC848A,B,C, LBC849B,C
LBC846A,B
LBC847A,B,C, LBC850B,C
LBC848A,B,C, LBC849B,C
V(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
15
5.0
V
V(BR)CES
V
V(BR)CBO
V
V(BR)EBO
V
ICBO
nA
µA
ON CHARACTERISTICS
DC Current Gain
(IC = 10
µA,
VCE = 5.0 V)
LBC846A, LBC847A, LBC848A
LBC846B, LBC847B, LBC848B
LBC847C, LBC848C
LBC846A, LBC847A, LBC848A
LBC846B, LBC847B, LBC848B,
LBC849B, LBC850B
LBC847C, LBC848C, LBC849C, LBC850C
VCE(sat)
VBE(sat)
VBE(on)
hFE
–
–
–
110
200
420
–
–
–
–
580
–
90
150
270
180
290
520
–
–
0.7
0.9
660
–
–
–
–
220
450
800
0.25
0.6
–
–
700
770
V
V
mV
–
(IC = 2.0 mA, VCE = 5.0 V)
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)
Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)
Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base–Emitter Voltage
(IC = 10 mA, VCE = 5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
(VCE = 5.0 Vdc, RS = 2.0 kΩ
f = 1.0 kHz, BW = 200 Hz)
LBC846A,B, LBC847A,B,C, LBC848A,B,C
LBC849B,C, LBC850B,C
fT
Cobo
NF
–
–
–
–
10
4.0
100
–
–
–
–
4.5
MHz
pF
dB
LBC846ALT1S-3/6
LESHAN RADIO COMPANY, LTD.
LBC846ALT1 Series
LBC847, LBC848, LBC849, LBC850
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.8
0.6
0.4
0.3
0.2
VCE = 10 V
TA = 25°C
V, VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.5
50
1.0
20
2.0
5.0 10
IC, COLLECTOR CURRENT (mAdc)
100
200
0
0.1
VCE(sat) @ IC/IB = 10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (mAdc)
50 70 100
TA = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
Figure 1. Normalized DC Current Gain
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
0.8
0.4
0
IC = IC = IC = 50 mA
10 mA 20 mA
IC = 100 mA
1.0
Figure 2. “Saturation” and “On” Voltages
VCE , COLLECTOR-EMITTER VOLTAGE (V)
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.02
1.0
0.1
IB, BASE CURRENT (mA)
10
20
0.2
10
1.0
IC, COLLECTOR CURRENT (mA)
100
Figure 3. Collector Saturation Region
10
7.0
C, CAPACITANCE (pF)
5.0
3.0
Cob
2.0
Cib
TA = 25°C
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
400
300
200
Figure 4. Base–Emitter Temperature Coefficient
100
80
60
40
30
20
0.5 0.7
1.0
VCE = 10 V
TA = 25°C
1.0
0.4 0.6 0.8 1.0
4.0 6.0 8.0 10
2.0
VR, REVERSE VOLTAGE (VOLTS)
20
40
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
50
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
LBC846ALT1S-4/6
LESHAN RADIO COMPANY, LTD.
LBC846
1.0
hFE , DC CURRENT GAIN (NORMALIZED)
VCE = 5 V
TA = 25°C
2.0
1.0
0.5
0.2
0.1 0.2
10
100
1.0
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
TA = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.2
0.5
1.0
VBE @ VCE = 5.0 V
LBC846ALT1 Series
10 20
2.0
5.0
IC, COLLECTOR CURRENT (mA)
50
100
200
Figure 7. DC Current Gain
2.0
TA = 25°C
1.6
20 mA
1.2
0.8
0.4
0
IC =
10 mA
50 mA
100 mA
200 mA
-1.0
-1.4
-1.8
Figure 8. “On” Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
θ
VB for VBE
-2.2
-2.6
-3.0
-55°C to 125°C
0.02
0.05
0.1
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
5.0
10
20
0.2
0.5
10 20
1.0 2.0
5.0
IC, COLLECTOR CURRENT (mA)
50
100
200
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
TA = 25°C
C, CAPACITANCE (pF)
20
Cib
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
40
500
200
100
50
20
VCE = 5 V
TA = 25°C
10
6.0
4.0
Cob
2.0
0.1
0.2
1.0 2.0
10 20
0.5
5.0
VR, REVERSE VOLTAGE (VOLTS)
50
100
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
LBC846ALT1S-5/6
电源技术
