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LF355D

Operational Amplifiers - Op Amps DISC BY STM 09/01 SO-8 SINGLE OP AMP

器件类别:模拟混合信号IC    放大器电路   

厂商名称:ST(意法半导体)

厂商官网:http://www.st.com/

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
ST(意法半导体)
零件包装代码
SOIC
包装说明
SOP, SOP8,.25
针数
8
Reach Compliance Code
not_compliant
ECCN代码
EAR99
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)
0.008 µA
25C 时的最大偏置电流 (IIB)
0.0002 µA
标称共模抑制比
100 dB
频率补偿
YES
最大输入失调电压
13000 µV
JESD-30 代码
R-PDSO-G8
JESD-609代码
e0
低-偏置
YES
低-失调
NO
负供电电压上限
-18 V
标称负供电电压 (Vsup)
-15 V
功能数量
1
端子数量
8
最高工作温度
70 °C
最低工作温度
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
+-15 V
认证状态
Not Qualified
标称压摆率
5 V/us
最大压摆率
4 mA
供电电压上限
18 V
标称供电电压 (Vsup)
15 V
表面贴装
YES
技术
BIPOLAR
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
标称均一增益带宽
2500 kHz
最小电压增益
15000
文档预览
®
LF155-LF255-LF355
LF156-LF256-LF356
LF157-LF257-LF357
WIDE BANDWIDTH
SINGLE J-FET OPERATIONAL AMPLIFIERS
.
.
.
.
.
.
.
.
.
.
.
HIGH INPUT IMPEDANCE J-FET INPUT
STAGE
HIGH SPEED J-FET OP-AMPs : up to 20MHz,
50V/µs
OFFSET VOLTAGE ADJUSTMENT DOES NOT
DEGRADE DRIFT OR COMMON-MODE
REJECTION AS IN MOST OF MONOLITHIC
AMPLIFIERS
INTERNAL COMPENSATION AND LARGE
DIFFERENTIAL INPUT VOLTAGECAPABILITY
(UP TO V
CC+
)
N
DIP8
(Plastic Package)
D
SO8
(Plastic Micropackage)
TYPICAL APPLICATIONS
PRECISION HIGH SPEED INTEGRATORS
FAST D/A AND CONVERTERS
HIGH IMPEDANCE BUFFERS
WIDEBAND, LOW NOISE, LOW DRIFT
AMPLIFIERS
LOGARITHIMIC AMPLIFIERS
PHOTOCELL AMPLIFIERS
SAMPLE AND HOLD CIRCUITS
ORDER CODES
Part Number
LF355, LF356, LF357
LF255, LF256, LF257
LF155, LF156, LF157
Example :
LF355N
Temperature
Range
0
o
C, +70
o
C
–40 C, +105 C
–55 C, +125 C
o
o
o
o
Package
N
D
PIN CONNECTIONS
(top view)
1
DESCRIPTION
These circuits are monolithic J-FET input operational
amplifiers incorporating well matched, high voltage
J-FET on the same chip with standard bipolar transis-
tors.
This amplifiers feature low input bias and offset cur-
rents, low input offset voltage and input offset voltage
drift,coupledwith offsetadjust which doesnot degrade
drift or common-mode rejection.
The devices are also designed for high slew rate, wide
bandwidth,extremelyfastsettlingtime, lowvoltageand
current noise and a low 1/f noise level.
July 1998
8
7
6
5
1
2
3
4
- Offset Null 1
- Inverting input
- Non-inverting input
- V
CC-
5
6
7
8
-
-
-
-
Offset Null 2
Output
+
V
CC
N.C.
2
3
4
1/14
LF155 - LF156 - LF157
SCHEMATIC DIAGRAM
V
i o
ADJUSTMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
i
V
id
P
tot
T
oper
Supply Voltage
Input Voltage - (note 1)
Differential Input Voltage
Power Dissipation
Output Short-circuit Duration
Operating Free Air Temperature Range
LF155-LF156-LF157
LF255-LF256-LF257
LF355-LF356-LF357
Parameter
Value
±22
±20
±40
570
Infinite
-55 to +125
–40 to +105
0 to 70
–65 to 150
o
Unit
V
V
V
mW
C
T
stg
Storage Temperature Range
o
C
2/14
LF155 - LF156 - LF157
ELECTRICAL CHARACTERISTICS
LF155, LF156, LF157
-55
o
C
T
amb
+125
o
C
LF255, LF256, LF257
-40
o
C
T
amb
+105
o
C
(unless otherwise specified)
Symbol
V
io
Parameter
Input Offset Voltage (R
S
= 50Ω)
T
amb
= 25
o
C
T
min.
T
amb
T
max.
Input Offset Current - (note 3)
o
T
amb
= 25 C
T
min.
T
amb
T
max.
Input Bias Current - (note 3)
T
amb
= 25
o
C
T
min.
T
amb
T
max.
±5V ≤
V
CC
≤ ±20V
±5V ≤
V
CC
≤ ±20V
LF155 - LF156 - LF157
LF255 - LF256 - LF257
Min.
Typ.
Max.
3
5
7
6.2
20
20
1
100
50
5
pA
nA
nA
pA
nA
nA
V/mV
Unit
mV
LF155, LF156, LF157
LF255, LF256, LF257
3
LF155, LF156, LF157
LF255, LF256, LF257
20
I
io
I
ib
A
vd
SVR
I
CC
DV
io
DV
io
/V
io
V
icm
CMR
±V
OPP
GBP
LF155, LF156, LF157
LF255, LF256, LF257
Large Signal Voltage Gain (R
L
= 2kΩ, V
O
=
±10V,
V
CC
=
±15V)
o
T
amb
= 25 C
T
min.
T
amb
T
max.
Supply Voltage Rejection Ratio - (note 4)
Supply Current (V
CC
=
±15V,
no load)
LF155, LF255
T
amb
= 25
o
C
LF156, LF256
LF157, LF257
Input Offset Voltage Drift (R
S
= 50Ω)
Change in Average Temperature Coefficient with V
io
adjust
(R
S
= 50Ω) - (note 2)
Input Common Mode Voltage Range (V
CC
=
±15V,
T
amb
= 25
o
C)
Common Mode Rejection Ratio
Output Voltage Swing (V
CC
=
±15V)
R
L
= 10kΩ
R
L
= 2kΩ
Gain Bandwidth Product (V
CC
=
±15V,
T
amb
= 25
o
C)
LF155, LF255
LF156, LF256
LF157, LF257
o
Slew Rate (V
CC
=
±15V,
T
amb
= 25 C)
LF155, LF255
A
V
= 1
LF156, LF256
LF157, LF257
A
V
= 5
o
Input Resistance (T
amb
= 25 C)
Input Capacitance (V
CC
=
±15V,
T
amb
= 25
o
C)
Equivalent Input Noise Voltage
(V
CC
=
±15V,
T
amb
= 25
o
C, R
S
= 100Ω)
f = 1000Hz
LF155, LF255
LF156, LF256
LF157, LF257
f = 100Hz
LF155, LF255
LF156, LF256
LF157, LF257
Equivalent Input Noise Current
(V
CC
=
±15V,
T
amb
= 25
o
C, f = 100Hz or f = 1000Hz)
Settling Time (V
CC
=
±15V,
T
amb
= 25
o
C) - (note 5)
LF155, LF255
LF156, LF256
LF157, LF257
50
25
85
200
100
2
5
5
5
0.5
4
7
7
µV/
C
o
µV/
C
V
dB
V
o
dB
mA
±11
85
±12
±10
+15.1
-12
100
±13
±12
2.5
5
20
MHz
SR
V/µs
7.5
30
5
12
50
10
12
3
R
i
C
i
e
n
20
12
12
25
15
15
0.01
4
1.5
1.5
pF
nV
Hz
√
i
n
t
s
pA
Hz
√
µs
3/14
LF155 - LF156 - LF157
ELECTRICAL CHARACTERISTICS
LF355, LF356, LF357
0
o
C
T
amb
+70
o
C
Symbol
V
io
I
io
I
ib
A
vd
SVR
I
CC
DV
io
DV
io
/V
io
V
icm
CMR
±V
OPP
GBP
Parameter
Input Offset Voltage (R
S
= 50Ω)
T
amb
= 25
o
C
T
min.
T
amb
T
max.
Input Offset Current - (note 3)
o
T
amb
= 25 C
T
min.
T
amb
T
max.
Input Bias Current - (note 3)
o
T
amb
= 25 C
T
min.
T
amb
T
max.
Large Signal Voltage Gain (R
L
= 2kΩ, V
O
=
±10V)
o
T
amb
= 25 C
T
min.
T
amb
T
max.
Supply Voltage Rejection Ratio - (note 4)
Supply Current (no load)
o
LF355
T
amb
= 25 C
LF356, LF357
Input Offset Voltage Drift (R
S
= 50Ω) - (note 2)
Change in Average Temperature Coefficient with V
io
adjust
(R
S
= 50Ω)
Input Common Mode Voltage Range (T
amb
= 25
o
C)
Common Mode Rejection Ratio
Output Voltage Swing
Gain Bandwidth Product T
amb
= 25 C)
o
o
V
CC
=
±15V
, (unless otherwise specified)
LF355 - LF356 - LF357
Min.
Typ.
Max.
3
10
13
50
2
200
8
pA
nA
pA
nA
V/mV
Unit
mV
3
20
25
15
80
200
100
2
5
5
0.5
4
10
µV/
o
C
o
µV/
C
per mV
V
dB
V
MHz
dB
mA
±10
80
±12
±10
R
L
= 10kΩ
R
L
= 2kΩ
LF355
LF356
LF357
LF355
LF356
LF357
+15.1
-12
100
±13
±12
2.5
5
20
5
12
50
12
10
3
20
12
25
15
0.01
4
1.5
SR
Slew Rate (T
amb
= 25 C)
A
V
= 1
V/µs
R
i
C
i
e
n
i
n
t
s
A
V
= 5
o
Input Resistance (T
amb
= 25 C)
o
Input Capacitance (Tamb = 25 C)
Equivalent Input Noise Voltage (T
amb
= 25
o
C, R
S
= 100Ω)
f = 1000Hz
LF355
LF356, LF357
f = 100Hz
LF355
LF356, LF357
Equivalent Input Noise Current
o
(T
amb
= 25 C, f = 100Hz or f = 1000Hz)
Settling Time (T
amb
= 25
o
C) - (note 5)
LF355
LF356, LF357
pF
nV
Hz
√
pA
Hz
√
µs
Notes :
1. Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
2. The temperature coefficient of the adjusted input offset voltage changes only a small amount (0.5µV/
o
C typically) for each mV
of adjustment from its original unadjusted value. Common-mode rejection and open loop voltage gain are alsounaffected by
offset adjustment.
3. The input bias currents are junction leakage currents which approximately double for every 10
o
C increase in the junction
temperature T
amb
. Due to limited production test time, the input bias current measured is correlated to junction temperature.
In a normal operation the junction temperature rises above the ambient temperature as a result of internal power dissipation,
P
tot
-T
amb
=T
amb
+R
th(j-a)
xP
tot
where Rt
h(j-a)
is the thermal resistance from junction to ambient. Use of a heatsink is recommended
f input currents are to be kept to a minimum.
4. Supply voltage rejection is measured for both supply magnitudes increasing or decreasing simultaneously, in accordance with
common practise.
5. Settling time is defined here, for a unity gain inverter connection using 2kΩ resistors for the LF155, LF156 series. It is the time
required for the error voltage (the voltage at the inverting input pin on the amplifier) to settle to within 0.01% of its final value from
the time a 10V step input is applied to the inverter. For the LF157 series A
V
= -5, the feedback resistor from output to input is 2kΩ
and the output step is 10V.
4/14
LF155 - LF156 - LF157
APPLICATION HINTS
The LF155, LF156, LF157 series are op amps with J-
FETinput transistors. TheseJFETs havelarge reverse
breakdown voltagesfromgatetosource or drain elimi-
natingtheneed of clamps across the inputs.Therefore
large differential input voltages can easily be accom-
modatedwithoutalarge increaseof inputcurrents. The
maximum differential input voltage is independent of
the supply voltage. However, neitherof thenegativein-
put voltagesshouldbe allowed to exceedthe negative
supply as this will cause large currents to flow which
can result in a destroyed unit. Exceeding the negative
common-modelimit on either inputwill causeareversal
of thephasetotheoutputandforce the amplifier output
to the correspondinghigh or lowstate. Exceedingthe
negativecommon-mode limit on bothinputs will force
the amplifier outputto a highstate.In neithercasedoes
a latch occur since raising the input back within the
common-mode range again puts the input stage and
thustheamplifierin a normal operatingmode. Exceed-
ingthepositive common-modelimit on asingle input will
not changethephase of the output however, if bothin-
putsexceedthe limit, theoutput of theamplifier will be
forcedto ahighstate.Theseamplifiers will operatewith
the common-mode input voltage equal to the positive
supply. In fact, the common-modevoltagecanex-
ceedthepositivesupplyby approximately 100mV inde-
pendentof supply volt-age and over thefull operat-
ingtemperaturerange.The positive suplly can there-
forebe used as a referenceonaninput as, forexample,
in a supply current monitor and/orlimiter. Precautions-
shouldbe taken to ensurethat thepowersupply forthe
integrated circuit never becomes re-versed in polarity
or that the unit is not inadvertentlyin-stalledbackwards
in a socket as an unilimited current surge throughthe
resulting forward diode within the IC couldcausefusin-
goftheinternalconductorsandresultin a destroyedunit.
Because these amplifiers are JFET rather than MOS-
FET input op amps they do not require special han-
dling.
Allof thebiascurrentsintheseamplifiersareset by FET
current sources. The drain currents for the amplifiers
are therefore essentially independent of supply volt-
ages.
As with most amplifiers, care should betakenwith lead
dress, components placement and supply decoupling
in order to ensure stability. For example, resistors from
the output to an input should be placed with the body
close to theinput to minimiz ”pickup”and maximize the
frequency of the feedback pole by minimizing the ca-
pacitancefromthe input to ground.
A feedback pole is createdwhen the feedbackaround
any amplifier is resistive. The parallel resistance and
capacitancefromthe input of thedevice(usually the in-
vertinginput)toacgroundsetthefrequencyofthepole.In
many instances the frequency of this pole is much
greaterthanthe expected3 dBfrequencyof the closed
loopgain and consequentlythereisnegligible effect on
stability margin. However, if the feedback pole is less
than approximately six time the expected 3 dB fre-
quencyaleadcapacitor should be placed from the out-
put to the input of the op amp. The value of that added
capacitor should be such that the RC time constant of
this capacitor and the resistance it parallels is greater
than or equal to the original feedback pole time con-
stant.
5/14
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参数对比
与LF355D相近的元器件有:LF356N、LF357D、LF357N、LF355N。描述及对比如下:
型号 LF355D LF356N LF357D LF357N LF355N
描述 Operational Amplifiers - Op Amps DISC BY STM 09/01 SO-8 SINGLE OP AMP Operational Amplifiers - Op Amps DISC BY STM 08/01 DIP-8 SINGLE OP AMP Operational Amplifiers - Op Amps DISC BY STM 11/01 SO-8 SINGLE OP AMP Operational Amplifiers - Op Amps DISC BY STM 08/01 DIP-8 SINGLE OP AMP Operational Amplifiers - Op Amps DISC BY STM 09/01 DIP-8 SINGLE OP AMP
是否Rohs认证 不符合 不符合 不符合 不符合 不符合
厂商名称 ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体)
零件包装代码 SOIC DIP SOIC DIP DIP
包装说明 SOP, SOP8,.25 DIP, DIP8,.3 SOP, SOP8,.25 DIP, DIP8,.3 DIP, DIP8,.3
针数 8 8 8 8 8
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
架构 VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB) 0.008 µA 0.008 µA 0.008 µA 0.008 µA 0.008 µA
25C 时的最大偏置电流 (IIB) 0.0002 µA 0.0002 µA 0.0002 µA 0.0002 µA 0.0002 µA
标称共模抑制比 100 dB 100 dB 100 dB 100 dB 100 dB
频率补偿 YES YES YES (AVCL>=5) YES (AVCL>=5) YES
最大输入失调电压 13000 µV 13000 µV 13000 µV 13000 µV 13000 µV
JESD-30 代码 R-PDSO-G8 R-PDIP-T8 R-PDSO-G8 R-PDIP-T8 R-PDIP-T8
JESD-609代码 e0 e0 e0 e0 e0
低-偏置 YES YES YES YES YES
低-失调 NO NO NO NO NO
负供电电压上限 -18 V -18 V -18 V -18 V -18 V
标称负供电电压 (Vsup) -15 V -15 V -15 V -15 V -15 V
功能数量 1 1 1 1 1
端子数量 8 8 8 8 8
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP DIP SOP DIP DIP
封装等效代码 SOP8,.25 DIP8,.3 SOP8,.25 DIP8,.3 DIP8,.3
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE IN-LINE SMALL OUTLINE IN-LINE IN-LINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 +-15 V +-15 V +-15 V +-15 V +-15 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
标称压摆率 5 V/us 12 V/us 50 V/us 50 V/us 5 V/us
最大压摆率 4 mA 10 mA 10 mA 10 mA 4 mA
供电电压上限 18 V 18 V 18 V 18 V 18 V
标称供电电压 (Vsup) 15 V 15 V 15 V 15 V 15 V
表面贴装 YES NO YES NO NO
技术 BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING THROUGH-HOLE GULL WING THROUGH-HOLE THROUGH-HOLE
端子节距 1.27 mm 2.54 mm 1.27 mm 2.54 mm 2.54 mm
端子位置 DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
标称均一增益带宽 2500 kHz 5000 kHz 20000 kHz 20000 kHz 2500 kHz
最小电压增益 15000 15000 15000 15000 15000
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器件捷径:
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