If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note
11)
Supply Voltage
Differential Input Voltage
Input voltage Range
(Note
3)
Output Short Circuit
Duration (Note
4)
LF412A
±22V
±38V
±19V
Continuous
LF412
±18V
±30V
±15V
Continuous
H Package
Power Dissipation
(Note
12)
T
j
max
(Note
5)
150°C
152°C/W
N Package
670 mW
115°C
115°C/W
θ
jA
(Typical)
Operating Temp. Range
(Note
6)
(Note
6)
Storage Temp.
−65°C
≤
T
A
≤
150° −65°C
≤
T
A
≤
150°
C
C
Range
Lead Temp.
(Soldering, 10 sec.)
260°C
260°C
ESD Tolerance
1700V
1700V
(Note
13)
DC Electrical Characteristics
(Note
7)
Symbol
V
OS
ΔV
OS
/ΔT
I
OS
Parameter
Input Offset Voltage
Average TC of Input
Offset Voltage
Input Offset Current
V
S
=±15V
(Note
7, Note 9)
I
B
Input Bias Current
V
S
=±15V
(Note
7, Note 9)
R
IN
A
VOL
Input Resistance
Large Signal Voltage
Gain
V
O
V
CM
CMRR
PSRR
I
S
Output Voltage Swing
Input Common-Mode
Voltage Range
Common-Mode
Rejection Ratio
Supply Voltage
Rejection Ratio
Supply Current
(Note
10)
V
O
= 0V, R
L
=
∞
80
100
3.6
5.6
70
100
3.6
6.5
dB
mA
R
S
≤
10k
80
T
j
=25°C
V
S
=±15V, V
O
=±10V,
R
L
=2k, T
A
=25°C
Over Temperature
V
S
=±15V, R
L
=10k
25
±12
±16
200
±13.5
+19.5
−16.5
100
70
15
±12
±11
200
±13.5
+14.5
−11.5
100
V/mV
V
V
V
dB
50
T
j
=25°C
T
j
=70°C
T
j
=125°C
T
j
=25°C
T
j
=70°C
T
j
=125°C
10
12
200
25
50
25
100
2
25
200
4
50
10
12
200
50
25
100
2
25
200
4
50
pA
nA
nA
pA
nA
nA
Ω
V/mV
Conditions
Min
R
S
=10 kΩ, T
A
=25°C
R
S
=10 kΩ
(Note
8)
LF412A
Typ
0.5
7
Max
1.0
10
Min
LF412
Typ
1.0
7
Max
3.0
20
mV
μV/°C
Units
Note 2:
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device
is functional, but do not guarantee specific performance limits.
AC Electrical Characteristics
(Note
7)
Symbol
Parameter
Amplifier to Amplifier
Coupling
SR
GBW
Slew Rate
Gain-Bandwidth Product
Conditions
Min
T
A
=25°C, f=1 Hz-20 kHz
(Input Referred)
V
S
=±15V, T
A
=25°C
V
S
=±15V, T
A
=25°C
10
3
15
4
8
2.7
15
4
V/μs
MHz
LF412A
Typ
−120
Max
Min
LF412
Typ
−120
Max
dB
Units
3
www.national.com
LF412
Symbol
THD
Parameter
Total Harmonic Dist
Conditions
Min
A
V
=+10, R
L
=10k,
V
O
=20 Vp-p,
BW=20 Hz-20 kHz
T
A
=25°C, R
S
=100Ω,
f=1 kHz
T
A
=25°C, f=1 kHz
LF412A
Typ
Max
Min
LF412
Typ
Max
Units
%
≤
0.02
≤
0.02
e
n
i
n
Equivalent Input Noise
Voltage
Equivalent Input Noise
Current
25
0.01
25
0.01
Note 3:
Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 4:
Any of the amplifier outputs can be shorted to ground indefintely, however, more than one should not be simultaneously shorted as the maximum junction
temperature will be exceeded.
Note 5:
For operating at elevated temperature, these devices must be derated based on a thermal resistance of
θ
jA
.
Note 6:
These devices are available in both the commercial temperature range 0°C
≤
T
A
≤
70°C and the military temperature range −55°C
≤
T
A
≤
125°C. The
temperature range is designated by the position just before the package type in the device number. A “C” indicates the commercial temperature range and an
“M” indicates the military temperature range. The military temperature range is available in “H” package only. In all cases the maximum operating temperature is
limited by internal junction temperature T
j
max.
Note 7:
Unless otherwise specified, the specifications apply over the full temperature range and for V
S
=±20V for the LF412A and for V
S
=±15V for the LF412.
V
OS
, I
B
, and I
OS
are measured at V
CM
=0.
Note 8:
The LF412A is 100% tested to this specification. The LF412 is sample tested on a per amplifier basis to insure at least 85% of the amplifiers meet this
specification.
Note 9:
The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature, T
j
. Due to limited
production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation, P
D
. T
j
=T
A
+θ
jA
P
D
where
θ
jA
is the thermal resistance from junction to ambient. Use of a heat sink is
recommended if input bias current is to be kept to a minimum.
Note 10:
Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice.
V
S
= ±6V to ±15V.
Note 11:
Refer to RETS412X for LF412MH and LF412MJ military specifications.
Note 12:
Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate
安防电子
