LL101A, LL101B, LL101C
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Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
• For general purpose applications
• The LL101 series is a metal-on-silicon Schottky
barrier device which is protected by a PN
junction guard ring
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast switching
and low logic level applications
MECHANICAL DATA
Case:
MiniMELF SOD-80
Weight:
approx. 31 mg
Cathode band color:
black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
• Integrated protection ring against static discharge
• Low capacitance
• Low leakage current
• This diode is also available in the DO-35 case with type
designation SD101A, B, C and in the SOD-123 case with
type designation SD101AW-V, SD101BW-V, SD101CW-V
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
• HF-detector
• Protection circuit
• Diode for low currents wits a low supply voltage
• Small battery charger
• Power supplies
• DC/DC converter for notebooks
PARTS TABLE
PART
LL101A
LL101B
LL101C
TYPE DIFFERENTATION
V
R
= 60 V, V
F
at I
F
= 1 mA max. 410 mV
V
R
= 50 V, V
F
at I
F
= 1 mA max. 400 mV
V
R
= 40 V, V
F
at I
F
= 1 mA max. 390 mV
ORDERING CODE
LL101A-GS18 or LL101A-GS08
LL101B-GS18 or LL101B-GS08
LL101C-GS18 or LL101C-GS08
INTERNAL
CONSTRUCTION
Single diode
Single diode
Single diode
REMARKS
Tape and reel
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Power dissipation (infinite heatsink)
Forward continuous courrent
Maximum single cycle surge 10 μs square wave
Note
(1)
Valid provided that electrodes are kept at ambient temperature
(1)
TEST CONDITION
PART
LL101A
LL101B
LL101C
SYMBOL
V
RRM
V
RRM
V
RRM
P
tot
I
F
I
FSM
VALUE
60
50
40
400
30
2
UNIT
V
V
V
mW
mA
A
Rev. 1.4, 15-May-12
Document Number: 85626
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
LL101A, LL101B, LL101C
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
T
j
T
stg
On PC board
50 mm x 50 mm x 1.6 mm
R
thJA
VALUE
125
- 65 to + 150
320
UNIT
°C
°C
K/W
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction temperature
Storage temperature range
Thermal resistance junction to ambient air
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse Breakdown Voltage
TEST CONDITION
I
R
= 10 μA
V
R
= 50 V
Leakage current
V
R
= 40 V
V
R
= 30 V
I
F
= 1 mA
I
F
= 1 mA
Forward voltage drop
I
F
= 1 mA
I
F
= 15 mA
V
R
= 0 V, f = 1 MHz
Diode capacitance
Reverse recovery time
V
R
= 0 V, f = 1 MHz
I
F
= I
R
= 5 mA, recover to 0.1 I
R
PART
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
SYMBOL
V
(BR)
V
(BR)
V
(BR)
I
R
I
R
I
R
V
F
V
F
V
F
V
F
V
F
V
F
C
D
C
D
C
D
t
rr
MIN.
60
50
40
200
200
200
0.410
0.400
0.390
1000
950
900
2.0
2.1
2.2
1
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
V
V
V
mV
mV
mV
pF
pF
pF
ns
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
gll101a_01
gll101a_02
Fig. 1 -
Typ. I
F
vs. V
F
for Primary Conduction through the Schottky
Barrier
Fig. 2 - Typ. I
F
of Combination Schottky Barrier and PN Junction
Guard Ring
Rev. 1.4, 15-May-12
Document Number: 85626
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
LL101A, LL101B, LL101C
www.vishay.com
Vishay Semiconductors
gll101a_03
gll101a_04
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
Fig. 4 - Typical Capacitance Curve as a Function of Reverse
Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
MiniMELF SOD-80
Cathode indification
*
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
* The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
2.5 (0.098) max.
1.25 (0.49) min.
1.6 (0.063)
1.4 (0.055)
5 (0.197) ref.
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070
Rev. 1.4, 15-May-12
Document Number: 85626
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
2 (0.079) min.
Legal Disclaimer Notice
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 08-Feb-17
1
Document Number: 91000
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