LL103A-LL103C
Small Signal Schottky Diodes
Features
For general purpose applications
Metal silicon schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices,steering,biasing and coupling diodes for
fast switching and low logic level applications
VOLTAGE RANGE:
40 -- 20 V
CURRENT: 400 mW
MINI-MELF
Cathode indification
φ
.5±0.1
1
0.4±0.1
3.4
+0.3
-0.1
Mechanical Data
Case:JEDEC MINI-MELF
Polarity: Color band denotes cathode end
Weight: Approx. 0.031 gram
Dimensions in millimeters
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Peak reverse voltage
Pow er dissipation (Infinite Heat Sink)
Single cycle surge 60Hz sine w ave
Forward continuous current
LL103A
40
LL103B
30
400
1)
15
LL103C
20
UNITS
V
mW
A
V
RRM
P
tot
I
FSM
I
(AV)
200
125
-55 ---+ 150
mA
Junction tenperature
Storage temperature range
T
J
T
STG
1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherw ise specified)
Symbols
Reverse breakdow n voltage
@ I
R
=50 A
LL103A
Min.
40
30
20
-
-
-
-
-
Typ.
-
-
-
50
10
250
Max.
-
5.0
0.37
0.6
-
-
-
UNITS
V
μA
V
pF
LL103B
LL103C
V
R
I
R
V
F
C
J
t
rr
R
θJA
Leakage current
@ V
R
=50V
LL103A,V
R
=30V
LL103B,V
R
=20V
LL103C,V
R
=10V
Forw ard voltage drop @ I
F
=20mA
I
F
=200mA
Junction capacitance @ V
R
=0V,f=1MHz
Reverse recovery time @ I
F
=I
R
=50mA
to 200mA,recover
to 0.1 I
R
Thermal resistance junction to ambient air
ns
K/W
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mail:lge@luguang.cn
LL103A-LL103C
Small Signal Schottky Diodes
Ratings AND Charactieristic Curves
FIG.1 -- TYPICAL VARIATION OF FWD. CURRENT VS FWD.
XXXXXXXX-VOLTAGE
FOR PRIMARY CONDUCTION THROUGH THE
XXXXXXXX-SCHOTTKY
BARRIER
FIG.2 -- TYPICAL FORWARD CONDUCTION CURVE OF
XXXXX
COMBINATION SCHOTTKY BARRIER AND PN
XXXXX
JUNCTION GUARD RING
1000
1000.000
100
100.000
I F – Forward Current ( mA)
5
– Forward Current (A)
F
4
3
2
1
0
0.0
10
10.000
1
1.000
0.100
0.1
0.010
0.01
0.001
0
100 200 300 400 500 600 700 800 900 1000
V F – Forward Voltage ( mV )
I
0.5
1.0
1.5
2.0
V
F
– Forward Voltage ( V )
FIG.3 -- TYPICAL VARIATION OF REVERSE CURRENT AT
XXXXXXXXX
VARIATION TEMPERATURES
FIG.4 -- TYPICAL CAPACITANCE CURVE AS A
JUNCTION OF REVERSE VOLTAGE
10000
C
D
– Diode Capacitance ( pF )
I
R
– Reverse Current (A )
30
f=1MHz
25
20
15
10
5
0
0
20
40 60 80 100 120 140 160
T
j
– Junction Temperature ( °C )
0
5
10
15
20
25
30
V
R
– Reverse V
oltage ( V )
1000
100
10
1
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mail:lge@luguang.cn
