CE
CHENYI ELECTRONICS
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the DO-35 case with the type
designation 1N4151
LL4151
SMALL SIGNAL SWITCHING DIODE
MECHANICAL DATA
.
Case:
MinMelf glass case(SOD- 80)
.
Weight:
Approx. 0.05gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherwise specified)
Symbol
Reverse voltage
Peak reverse voltage
Average rectified current, Half wave rectification with
Resistive load at T
A
=25
and F 50Hz
I
FSM
Ptot
T
J
V
R
V
RM
I
AV
Value
50
75
150
1)
Units
Volts
Volts
mA
Surge forward current at t<1S and T
J
=25
Power dissipation at T
A
=25
Junction temperature
Storage temperature range
500
500
1)
175
-65 to + 175
mA
mW
T
STG
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherwise specified)
Symbols
Forward voltage
Leakage current
at V
R
=50V
V
F
I
R
Min.
Typ.
Max.
1
50
Units
Volts
nA
at VR=20V, T
J
=150
Junction capacitance at V
R
=V
F
=0V
Reverse breakdown voltage tested with 5 A
Reverse recovery time from I
F
=10mA to I
R
=1mA,
from I
F
=10mA to I
R
=1mA V
R
=6V, R
L
=100
Thermal resistance junction to ambient
Rectification efficience at f=100MHz,V
RF
=2V
I
R
C
J
V
(BR)R
t
rr
t
rr
R JA
0.45
75
50
2
A
pF
V
4
2
350
1)
ns
ns
K/W
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 3
CE
CHENYI ELECTRONICS
LL4151
SMALL SIGNAL SWITCHING DIODE
RATINGS AND CHATACTERISTIC CURVES LL4151
FIG.2-DYNAMIC FORWARD RESISTANCE
FLG.1-FORWARD CHARACTERISTICS
VERSUS FORWARD CURRENT
FIG.3-ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
FIG.4-RELATIVE CAPACITANCE VERSUS
VOLTAGE
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 2 of 3
CE
CHENYI ELECTRONICS
LL4151
SMALL SIGNAL SWITCHING DIODE
FIG.6-LEAKAGE CURRENT VERSUS
JUNCTION
FIG.5-RECTIFICATION EFFICIENCY
MEASUREMENT
CIRCUIT
TEMPERATURE
FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 3 of 3
