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LM148J/883

QUAD OP-AMP, 5000uV OFFSET-MAX, 1MHz BAND WIDTH, CDIP14, CERDIP-14

器件类别:模拟混合信号IC    放大器电路   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Rochester Electronics
零件包装代码
DIP
包装说明
DIP,
针数
14
Reach Compliance Code
unknown
放大器类型
OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB)
0.1 µA
标称共模抑制比
90 dB
最大输入失调电压
5000 µV
JESD-30 代码
R-CDIP-T14
JESD-609代码
e0
长度
19.43 mm
湿度敏感等级
1
负供电电压上限
-22 V
标称负供电电压 (Vsup)
-15 V
功能数量
4
端子数量
14
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装代码
DIP
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
260
筛选级别
MIL-STD-883
座面最大高度
5.08 mm
标称压摆率
0.5 V/us
供电电压上限
22 V
标称供电电压 (Vsup)
15 V
表面贴装
NO
技术
BIPOLAR
温度等级
MILITARY
端子面层
TIN LEAD
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
40
总剂量
MIL-STD-883 V
标称均一增益带宽
1000 kHz
宽度
7.62 mm
文档预览
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LM148QML Quad 741 Op Amp
February 2005
LM148QML
Quad 741 Op Amps
General Description
The LM148 is a true quad LM741. It consists of four inde-
pendent, high gain, internally compensated, low power op-
erational amplifiers which have been designed to provide
functional characteristics identical to those of the familiar
LM741 operational amplifier. In addition the total supply
current for all four amplifiers is comparable to the supply
current of a single LM741 type op amp. Other features
include input offset currents and input bias current which are
much less than those of a standard LM741. Also, excellent
isolation between amplifiers has been achieved by indepen-
dently biasing each amplifier and using layout techniques
which minimize thermal coupling.
The LM148 can be used anywhere multiple LM741 or
LM1558 type amplifiers are being used and in applications
where amplifier matching or high packing density is required.
Features
n
n
n
n
n
n
n
n
n
n
741 op amp operating characteristics
Class AB output stage — no crossover distortion
Pin compatible with the LM124
Overload protection for inputs and outputs
Low supply current drain:
0.6 mA/Amplifier
Low input offset voltage:
1 mV
Low input offset current:
4 nA
Low input bias current
30 nA
High degree of isolation between amplifiers:
120 dB
Gain bandwidth product (unity gain):
1.0 MHz
Ordering Information
NS PART NUMBER
LM148E/883
LM148J/883
SMD PART NUMBER
NS PACKAGE NUMBER
E20A
J14A
PACKAGE DESCRIPTION
20LD LEADLESS CHIP CARRIER
14LD CERDIP
Connection Diagrams
20120502
Top View
See NS Package Number J14A
© 2005 National Semiconductor Corporation
DS201205
www.national.com
LM148QML
Connection Diagrams
(Continued)
20120548
Top View
See NS Package Number E20A
Schematic Diagram
20120501
* 1 pF in the LM149
www.national.com
2
LM148QML
Absolute Maximum Ratings
(Note 1)
Supply Voltage
Differential Input Voltage
Output Short Circuit Duration(Note 2)
Power Dissipation (P
d
at 25˚C) (Note 3)
Thermal Resistance
θ
JA
CERDIP (Still Air)
CERDIP (500LF/ Min Air flow)
LCC (Still Air)
LCC (500LF/ Min Air flow)
θ
JC
CERDIP
LCC
Maximum Junction Temperature (T
jMAX
)
Operating Temperature Range
Storage Temperature Range
Lead Temperature (Soldering, 10 sec.) Ceramic
ESD tolerance (Note 4)
19˚C/W
21˚C/W
150˚C
−55˚C
T
A
+125˚C
−65˚C
T
A
+150˚C
300˚C
500V
103˚C/W
52˚C/W
90˚C/W
66˚C/W
±
22V
±
44V
Continuous
1100mW
Quality Conformance Inspection
MIL-STD-883, Method 5005 — Group A
Subgroup
1
2
3
4
5
6
7
8A
8B
9
10
11
Description
Static tests at
Static tests at
Static tests at
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
Temp ( ˚C)
+25
+125
-55
+25
+125
-55
+25
+125
-55
+25
+125
-55
Electrical Characteristics
DC PARAMETERS (The following conditions apply to all parameters, unless otherwise specified.) V
CC
=
±
15V, R
S
= 0Ω
Symbol
V
IO
I
IO
Parameter
Input Offset Voltage
Input Offset Current
Input Bias Current
Input Resistance
Power Supply Rejection Ratio
Power Supply Rejection Ratio
+V
CC
= +15V and +5V, −V
CC
=
−15V, R
S
= 50Ω
+V
CC
= +15V, −V
CC
= −15V and
−5V, R
S
= 50Ω
3
Conditions
V
CM
= 0V, R
S
= 50
V
CM
= 0V
V
CM
= 0V
Notes
Min Max
−5
−6
−25
−75
1
1
+5
+6
+25
+75
100
325
Units
mV
mV
nA
nA
nA
nA
MΩ
dB
dB
Sub-
groups
1
2,3
1
2,3
1
2,3
1
1, 2, 3
1, 2, 3
±
I
IB
R
in
PSRR+
PSRR−
(Note 5)
0.8
77
77
www.national.com
LM148QML
Electrical Characteristics
Symbol
CMRR
I
OS
+
I
OS
I
CC
A
VS
+
A
VS
V
out
+
V
out
Parameter
(Continued)
DC PARAMETERS (The following conditions apply to all parameters, unless otherwise specified.) V
CC
=
±
15V, R
S
= 0Ω
Conditions
Notes
Min Max
70
−55
14
0.4
0.4
Large Signal Voltage Gain
Large Signal Voltage Gain
Output Voltage Swing
Output Voltage Swing
V
OUT
= 0V to +10V, R
L
>
2 kΩ
V
OUT
= 0V to −10V, R
L
>
2 kΩ
R
L
= 10 kΩ
R
L
= 2kΩ
R
L
= 10 kΩ
R
L
= 2kΩ
50
25
50
25
+12
+10
−12
−10
−14
55
3.6
4.5
Units
dB
mA
mA
mA
mA
V/mV
V/mV
V/mV
V/mV
V
V
V
V
Sub-
groups
1, 2, 3
1
1
1
2, 3
4
5, 6
4
5, 6
4, 5, 6
4, 5, 6
4, 5, 6
4, 5, 6
Common Mode Rejection Ratio +V
CM
=
±
12V, R
S
= 50Ω
Short Circuit Current
Short Circuit Current
Power Supply Current
Electrical Characteristics
AC PARAMETERS (The following conditions apply to all parameters, unless otherwise specified.) V
CC
=
±
15V, A
V
= 1, R
S
=
0Ω
Symbol
Parameter
Slew Rate
Gain Bandwidth Product
Conditions
Notes
Min Max
0.2
0.4
1.4
Units
V/µs
MHz
Sub-
groups
7, 8A, 8B
7, 8A, 8B
±
SR
G
BW
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2:
Any of the amplifier outputs can be shorted to ground indefinitely; however, more than one should not be simultaneously shorted as the maximum junction
temperature will be exceeded.
Note 3:
The maximum power dissipation for these devices must be derated at elevated temperatures and is dicated by T
JMAX
,
θ
JA
, and the ambient temperature,
T
A
. The maximum available power dissipation at any temperature is P
d
= (T
JMAX
− T
A
)/θ
JA
or the number given in the Absolute Maximum Ratings, whichever is less.
Note 4:
Human body model, 1.5 kΩ in series with 100 pF
Note 5:
Parameter Guaranteed, Not Tested.
Cross Talk Test Circuit
V
S
=
±
15V
20120506
20120507
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4
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