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LM158QML Low Power Dual Operational Amplifiers
January 13, 2009
LM158QML
Low Power Dual Operational Amplifiers
General Description
The LM158 series consists of two independent, high gain, in-
ternally frequency compensated operational amplifiers which
were designed specifically to operate from a single power
supply over a wide range of voltages. Operation from split
power supplies is also possible and the low power supply
current drain is independent of the magnitude of the power
supply voltage.
Application areas include transducer amplifiers, dc gain
blocks and all the conventional op amp circuits which now can
be more easily implemented in single power supply systems.
For example, the LM158 series can be directly operated off
of the standard +5V power supply voltage which is used in
digital systems and will easily provide the required interface
electronics without requiring the additional ±15V power sup-
plies.
Advantages
■
■
■
■
■
Two internally compensated op amps
Eliminates need for dual supplies
Allows direct sensing near Gnd and V
O
also goes to Gnd
Compatible with all forms of logic
Power drain suitable for battery operation
Features
■
Available with radiation guarantee
■
■
■
■
■
■
■
■
■
100 krad(Si)
—
High Dose Rate
100 krad(Si)
—
ELDRS Free
Internally frequency compensated for unity gain
Large dc voltage gain: 100 dB
Wide bandwidth (unity gain): 1 MHz
(temperature compensated)
Wide power supply range:
—
Single supply: 3V to 32V
—
or dual supplies: ±1.5V to ±16V
Very low supply current drain (500
μA)
− essentially
independent of supply voltage
Low input offset voltage: 2 mV
Input common-mode voltage range includes ground
Differential input voltage range equal to the power supply
voltage
Large output voltage swing: 0V to V
+
− 1.5V
Unique Characteristics
■
In the linear mode the input common-mode voltage range
includes ground and the output voltage can also swing to
ground, even though operated from only a single power
supply voltage.
■
The unity gain cross frequency is temperature
compensated.
■
The input bias current is also temperature compensated.
Ordering Information
NS Part Number
LM158H/883
LM158J/883
LM158H-SMD
LM158AH/883
LM158AJ/883
LM158AWG/883
LM158AHRQMLV
HIGH DOSE RATE ONLY
(Note 11)
LM158AJ-QMLV
LM158AJRQMLV
HIGH DOSE RATE ONLY
(Note 11)
LM158AWGRQMLV
HIGH DOSE RATE ONLY
(Note 11)
LM158A MDR
HIGH DOSE RATE ONLY DIE
(Notes 1, 11)
LM158AHRLQMLV
ELDRS FREE ONLY
(Note 12)
LM158AJRLQMLV
ELDRS FREE ONLY
(Note 12)
© 2009 National Semiconductor Corporation
201502
SMD Part Number
5962–8771001PA
5962–8771001GA
5962–8771002GA
5962–8771002PA
5962–8771002QXA
5962R8771002VGA
100 krad(Si)
5962–8771002VPA
5962R8771002VPA
100 krad(Si)
5962R8771002VXA
100 krad(Si)
5962R8771002V9A
100 krad(Si)
5962R8771003VGA
100 krad(Si)
5962R8771003VPA
100 krad(Si)
NS Package Number
H08C
J08A
H08C
H08C
J08A
WG10A
H08C
J08A
J08A
WG10A
Package Description
8LD T0–99 Metal Can
8LD Ceramic DIP
8LD T0–99 Metal Can
8LD T0–99 Metal Can
8LD Ceramic DIP
10LD Ceramic SOIC
8LD T0–99 Metal Can
8LD Ceramic DIP
8LD Ceramic DIP
10LD Ceramic SOIC
H08C
J08A
8LD T0–99 Metal Can
8LD Ceramic DIP
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LM158QML
NS Part Number
LM158AWGRLQMLV
ELDRS FREE ONLY
(Note 12)
LM158A MDE
ELDRS FREE ONLY DIE
(Notes 1, 12)
SMD Part Number
5962R8771003VXA
100 krad(Si)
5962R8771003V9A
100 krad(Si)
NS Package Number
WG10A
Package Description
10LD Ceramic SOIC
Note 1: FOR ADDITIONAL DIE INFORMATION, PLEASE VISIT THE HI REL WEB SITE AT: www.national.com/analog/space/level_die
Connection Diagrams
Metal Can Package
20150201
Top View
See NS Package Number H08C
DIP Package
10LD Ceramic SOIC
20150202
20150204
Top View
See NS Package Number WG10A
Top View
See NS Package Number J08A
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2
LM158QML
Schematic Diagram
(Each Amplifier)
20150203
3
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LM158QML
Absolute Maximum Ratings
(Note 2)
Supply Voltage, V
+
Differential Input Voltage
Input Voltage
Power Dissipation (Note 3)
Output Short-Circuit to GND(Note 4)
(One Amplifier)
V
+
≤
15V
DC
and T
A
= 25°C
Maximum Junction Temperature (T
Jmax
)
Input Current (V
I
< −0.3V)(Note 5)
Operating Temperature Range
Storage Temperature Range
Lead Temperature (Soldering, 10 seconds)
Metal Can
Ceramic DIP
Ceramic SOIC
Thermal Resistance
θ
JA
Metal Can (Still Air)
Metal Can (500LF/Min Air Flow)
Ceramic DIP (Still Air)
Ceramic DIP (500LF/Min Air Flow)
Ceramic SOIC (Still Air)
Ceramic SOIC (500LF/Min Air Flow)
θ
JC
Metal Can
Ceramic DIP
Ceramic SOIC
Package Weight
Metal Can
Ceramic DIP
Ceramic SOIC
ESD Tolerance (Note 8)
32V
DC
32V
DC
−0.3V
DC
to +32V
DC
830 mW
Continuous
150°C
50 mA
−55°C
≤
T
A
≤
+125°C
−65°C
≤
T
A
≤
+150°C
300°C
260°C
260°C
155°C/W
80°C/W
132°C/W
81°C/W
195°C/W
131°C/W
42°C/W
23°C/W
33°C/W
1,000mg
1,100mg
220mg
250V
Quality Conformance Inspection
Mil-Std-883, Method 5005 - Group A
Subgroup
1
2
3
4
5
6
7
8A
8B
9
10
11
12
13
14
Description
Static tests at
Static tests at
Static tests at
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
Settling time at
Settling time at
Settling time at
Temp °C
+25
+125
-55
+25
+125
-55
+25
+125
-55
+25
+125
-55
+25
+125
-55
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