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LM211DR2G

输出类型:DTL, MOS, Open-Collector, Open-Emitter, RTL, TTL 各通道功耗:6mA 传播延迟:- 比较器组数:1 电源电压:5V ~ 30V, ±2.5V ~ 15V

器件类别:模拟混合信号IC    放大器电路   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

器件标准:

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
ON Semiconductor(安森美)
零件包装代码
SOIC
包装说明
LEAD FREE, SOIC-8
针数
8
制造商包装代码
751-07
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
1 week
Samacsys Confidence
3
Samacsys Status
Released
Samacsys PartID
9948
Samacsys Pin Count
8
Samacsys Part Category
Integrated Circuit
Samacsys Package Category
Small Outline Packages
Samacsys Footprint Name
SOIC-8 NB CASE 751-07 ISSUE AK
Samacsys Released Date
2018-03-08 19:57:52
Is Samacsys
N
放大器类型
COMPARATOR
最大平均偏置电流 (IIB)
0.15 µA
25C 时的最大偏置电流 (IIB)
0.1 µA
最大输入失调电压
4000 µV
JESD-30 代码
R-PDSO-G8
JESD-609代码
e3
长度
4.9 mm
湿度敏感等级
1
负供电电压上限
-18 V
标称负供电电压 (Vsup)
-15 V
功能数量
1
端子数量
8
最高工作温度
85 °C
最低工作温度
-25 °C
输出类型
OPEN-COLLECTOR
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
电源
+-15 V
认证状态
Not Qualified
标称响应时间
200 ns
座面最大高度
1.75 mm
最大压摆率
6 mA
供电电压上限
18 V
标称供电电压 (Vsup)
15 V
表面贴装
YES
技术
BIPOLAR
温度等级
OTHER
端子面层
Tin (Sn)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
40
宽度
3.9 mm
Base Number Matches
1
文档预览
LM211, LM311
Single Comparators
The ability to operate from a single power supply of 5.0 V to 30 V or
$15
V split supplies, as commonly used with operational amplifiers,
makes the LM211/LM311 a truly versatile comparator. Moreover, the
inputs of the device can be isolated from system ground while the
output can drive loads referenced either to ground, the V
CC
or the V
EE
supply. This flexibility makes it possible to drive DTL, RTL, TTL, or
MOS logic. The output can also switch voltages to 50 V at currents to
50 mA, therefore, the LM211/LM311 can be used to drive relays,
lamps or solenoids.
Features
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MARKING
DIAGRAMS
8
PDIP−8
N SUFFIX
CASE 626
1
1
8
LM311AN
AWL
YYWWG
These Devices are Pb−Free and are RoHS Compliant
8
3.0 k
V
CC
V
CC
5.0 k
5
2
R
L
6
8 7
Output
1
Inputs
2
+
3
V
EE
-
4
8
7
1
R
L
Output
8
1
+
Inputs
SOIC−8
D SUFFIX
CASE 751
1
LMx11
ALYW
G
3
4
V
EE
Split Power Supply with Offset Balance
Single Supply
V
CC
2
Inputs
3
V
CC
2
7
Inputs
Output
3
+
4
V
EE
8
1
R
L
+
4
8
7
1
R
L
Output
x
A
WL, L
YY, Y
WW, W
G
G
= 2 or 3
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
= Pb−Free Package
PIN CONNECTIONS
GND
Inputs
3
1
2
8
Input polarity is reversed when
GND pin is used as an output.
Ground−Referred Load
V
EE
Input polarity is reversed when
GND pin is used as an output.
Load Referred to Negative Supply
V
CC
Output
Balance/Strobe
Balance
+
7
6
5
V
EE
V
CC
4
(Top View)
2
V
CC
2
Inputs
3
4
V
EE
Load Referred to Positive Supply
Strobe Capability
Inputs
7
1
1.0 k
R
L
Output
3
+
4
6
8
7
1
R
L
Output
+
8
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
V
EE
TTL Strobe
Figure 1. Typical Comparator Design Configurations
©
Semiconductor Components Industries, LLC, 2012
August, 2012
Rev. 6
1
Publication Order Number:
LM211/D
LM211, LM311
ORDERING INFORMATION
Device
LM211DG
LM211DR2G
LM311DG
LM311DR2G
LM311NG
PDIP−8
(Pb−Free)
SOIC−8
(Pb−Free)
Package
Shipping
98 Units / Rail
2500 Units / Tape & Reel
98 Units / Rail
2500 Units / Tape & Reel
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MAXIMUM RATINGS
(T
A
= +25°C, unless otherwise noted.)
Rating
Total Supply Voltage
Output to Negative Supply Voltage
Ground to Negative Supply Voltage
Input Differential Voltage
Input Voltage (Note 2)
Voltage at Strobe Pin
Power Dissipation and Thermal Characteristics
Plastic DIP
Derate Above T
A
= +25°C
Operating Ambient Temperature Range
Operating Junction Temperature
Storage Temperature Range
Symbol
V
CC
+⎥V
EE
V
O
−V
EE
V
EE
V
ID
V
in
P
D
R
qJA
T
A
T
J(max)
T
stg
−25
to +85
+150
−65
to +150
LM211
36
50
30
±30
±15
V
CC
to V
CC
−5
625
5.0
0 to +70
+150
−65
to +150
LM311
36
40
30
±30
±15
V
CC
to V
CC
−5
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
mW
mW/°C
°C
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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2
LM211, LM311
ELECTRICAL CHARACTERISTICS
(V
CC
= +15 V, V
EE
=
−15
V, T
A
= 25°C, unless otherwise noted) Note 1
LM211
Characteristic
Input Offset Voltage (Note 3)
R
S
50 kW, T
A
= +25°C
R
S
50 kW, T
low
T
A
T
high
*
Input Offset Current (Note 3) T
A
= +25°C
T
low
T
A
T
high
*
Input Bias Current T
A
= +25°C
T
low
T
A
T
high
*
Voltage Gain
Response Time (Note 4)
Saturation Voltage
V
ID
−5.0
mV, I
O
= 50 mA, T
A
= 25°C
V
ID
≤−10
mV, I
O
= 50 mA, T
A
= 25°C
V
CC
4.5 V, V
EE
= 0, T
low
T
A
T
high
*
V
ID
6≤6.0
mV, I
sink
8.0 mA
V
ID
6≤10
mV, I
sink
8.0 mA
Strobe ”On” Current (Note 5)
Output Leakage Current
V
ID
5.0 mV, V
O
= 35 V, T
A
= 25°C, I
strobe
= 3.0 mA
V
ID
10 mV,
V
O
= 35 V, T
A
= 25°C, I
strobe
= 3.0 mA
V
ID
5.0 mV,
V
O
= 35 V, T
low
T
A
T
high
*
Input Voltage Range (T
low
T
A
T
high
*)
V
ICR
V
OL
Symbol
V
IO
Min
40
I
S
−14.5
Typ
0.7
1.7
45
200
200
0.75
0.23
3.0
0.2
0.1
−14.7
to
13.8
+2.4
−1.3
Max
3.0
4.0
10
20
100
150
1.5
0.4
10
0.5
+13.0
Min
40
−14.5
LM311
Typ
2.0
1.7
45
200
200
0.75
0.23
3.0
0.2
−14.7
to
13.8
+2.4
−1.3
Max
7.5
10
50
70
250
300
1.5
0.4
50
+13.0
mA
nA
nA
mA
V
nA
nA
V/mV
ns
V
Unit
mV
I
IO
I
IB
A
V
Positive Supply Current
Negative Supply Current
I
CC
I
EE
+6.0
−5.0
+7.5
−5.0
mA
mA
* LM211: T
low
=
−25°C,
T
high
= +85°C
LM311: T
low
= 0°C, T
high
= +70°C
1. Offset voltage, offset current and bias current specifications apply for a supply voltage range from a single 5.0 V supply up to
±15
V supplies.
2. This rating applies for
±15
V supplies. The positive input voltage limit is 30 V above the negative supply. The negative input voltage limit is
equal to the negative supply voltage or 30 V below the positive supply, whichever is less.
3. The offset voltages and offset currents given are the maximum values required to drive the output within a volt of either supply with a 1.0 mA
load. Thus, these parameters define an error band and take into account the “worst case” effects of voltage gain and input impedance.
4. The response time specified is for a 100 mV input step with 5.0 mV overdrive.
5. Do not short the strobe pin to ground; it should be current driven at 3.0 mA to 5.0 mA.
8
V
CC
Balance
Balance/Strobe
5
6
1.3 k
300
300
3.7 k
1.3 k
100
3.7 k
300
250
900
600
800
2
Inputs
3
730
340
1.3 k
1
1.3 k
5.4 k
4
V
EE
GND
5.0 k
7
200
Output
800
800
3.0 k
Figure 2. Circuit Schematic
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3
LM211, LM311
140
120
100
80
Normal
Pins 5 & 6 Tied
to V
CC
I IO , INPUT OFFSET CURRENT (nA)
I IB , INPUT BIAS CURRENT (nA)
V
CC
= +15 V
V
EE
= -15 V
5.0
V
CC
= +15 V
V
EE
= -15 V
Pins 5 & 6 Tied
to V
CC
4.0
3.0
2.0
40
0
-55
1.0
0
-55
Normal
-25
0
25
50
75
100
125
-25
0
25
50
75
100
125
T
A
, TEMPERATURE (°C)
T
A
, TEMPERATURE (°C)
Figure 3. Input Bias Current
versus Temperature
Figure 4. Input Offset Current
versus Temperature
140
I IB , INPUT BIAS CURRENT (nA)
COMMON MODE LIMITS (V)
120
100
80
60
40
20
0
-16
-12
-8.0
-4.0
0
4.0
8.0
12
16
V
CC
= +15 V
V
EE
= -15 V
T
A
= +25°C
V
CC
-0.5
-1.0
-1.5
Referred to Supply Voltages
0.4
0.2
V
EE
-55
-25
0
25
50
75
100
125
DIFFERENTIAL INPUT VOLTAGE (V)
T
A
, TEMPERATURE (°C)
Figure 5. Input Bias Current versus
Differential Input Voltage
Figure 6. Common Mode Limits
versus Temperature
VO , OUTPUT VOLTAGE (V)
VO , OUTPUT VOLTAGE (V)
+5.0 V
5.0
4.0
3.0
2.0
1.0
0
100
50
0
5.0 mV
20 mV
V
in
+5.0 V
*
)
500
W
V
O
2.0 mV
V
CC
= +15 V
V
EE
= -15 V
T
A
= +25°C
0
0.1
0.2
0.3
0.4
t
TLH
, RESPONSE TIME (ms)
0.5
0.6
5.0
4.0
3.0
2.0
1.0
0
0
-50
-100
5.0 mV
2.0 mV
20 mV
V
in
*
)
500
W
V
O
Vin ,INPUT VOLTAGE (mV)
Vin ,INPUT VOLTAGE (mV)
V
CC
= +15 V
V
EE
= -15 V
T
A
= +25°C
0
0.1
0.2
0.3
0.4
t
THL
, RESPONSE TIME (ms)
0.5
0.6
Figure 7. Response Time for
Various Input Overdrives
Figure 8. Response Time for
Various Input Overdrives
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4
LM211, LM311
VO , OUTPUT VOLTAGE (V)
VO , OUTPUT VOLTAGE (V)
Vin ,INPUT VOLTAGE (mV)
2.0 mV
V
EE
Vin ,INPUT VOLTAGE (mV)
15
10
5.0
0
-5.0
-10
-15
0
-50
20 mV
5.0 mV
V
CC
V
in
*
)
V
O
2.0 k
15
10
5.0
0
-5.0
-10
-15
100
50
0
0
V
CC
5.0 mV
2.0 mV
V
in
*
)
V
EE
V
O
2.0 k
20 mV
V
CC
= +15 V
V
EE
= -15 V
T
A
= +25°C
-100
0
1.0
t
TLH
, RESPONSE TIME (ms)
V
CC
= +15 V
V
EE
= -15 V
T
A
= +25°C
2.0
1.0
t
THL
, RESPONSE TIME (ms)
2.0
Figure 9. Response Time for
Various Input Overdrives
Figure 10. Response Time for
Various Input Overdrives
OUTPUT SHORT CIRCUIT CURRENT (mA)
150
T
A
= +25°C
125
100
75
Short Circuit Current
50
25
0
Power Dissipation
0.90
PD , POWER DISSIPATION (W)
V , SATURATION VOLTAGE (V)
OL
0.75
0.60
0.45
0.30
0.15
0
15
0.90
0.75
0.60
T
A
= -55°C
0.45
0.30
0.15
0
0
8.0
16
24
32
40
48
56
I
O
, OUTPUT CURRENT (mA)
T
A
= +25°C
T
A
= +125°C
0
5.0
10
V
O
, OUTPUT VOLTAGE (V)
Figure 11. Output Short Circuit Current
Characteristics and Power Dissipation
Figure 12. Output Saturation Voltage
versus Output Current
OUTPUT LEAKAGE CURRENT (mA)
100
POWER SUPPLY CURRENT (mA)
V
CC
= +15 V
V
EE
= -15 V
10
3.6
T
A
= +25°C
3.0
Positive Supply - Output Low
2.4
1.8
Positive and Negative Power Supply - Output H igh
1.2
0.6
0
45
65
85
105
125
0
5.0
10
15
20
25
30
T
A
, TEMPERATURE (°C)
V
CC
-V
EE
, POWER SUPPLY VOLTAGE (V)
1.0
Output V
O
= +50 V (LM211 only)
0.1
0.01
25
Figure 13. Output Leakage Current
versus Temperature
Figure 14. Power Supply Current
versus Supply Voltage
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参数对比
与LM211DR2G相近的元器件有:LM311DR2G。描述及对比如下:
型号 LM211DR2G LM311DR2G
描述 输出类型:DTL, MOS, Open-Collector, Open-Emitter, RTL, TTL 各通道功耗:6mA 传播延迟:- 比较器组数:1 电源电压:5V ~ 30V, ±2.5V ~ 15V 输出类型:DTL, MOS, Open-Collector, Open-Emitter, RTL, TTL 各通道功耗:7.5mA 传播延迟:- 比较器组数:1 电源电压:5V ~ 30V, ±2.5V ~ 15V
Brand Name ON Semiconductor ON Semiconductor
是否无铅 不含铅 不含铅
是否Rohs认证 符合 符合
零件包装代码 SOIC SOIC
包装说明 LEAD FREE, SOIC-8 LEAD FREE, SOIC-8
针数 8 8
制造商包装代码 751-07 751-07
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
Factory Lead Time 1 week 1 week
Samacsys Confidence 3 3
Samacsys Status Released Released
Samacsys PartID 9948 9992
Samacsys Pin Count 8 8
Samacsys Part Category Integrated Circuit Integrated Circuit
Samacsys Package Category Small Outline Packages Small Outline Packages
Samacsys Footprint Name SOIC-8 NB CASE 751-07 ISSUE AK SOIC-8 NB CASE 751-07 ISSUE AK
Samacsys Released Date 2018-03-08 19:57:52 2015-10-26 02:53:29
Is Samacsys N N
放大器类型 COMPARATOR COMPARATOR
最大平均偏置电流 (IIB) 0.15 µA 0.3 µA
25C 时的最大偏置电流 (IIB) 0.1 µA 0.25 µA
最大输入失调电压 4000 µV 10000 µV
JESD-30 代码 R-PDSO-G8 R-PDSO-G8
JESD-609代码 e3 e3
长度 4.9 mm 4.9 mm
湿度敏感等级 1 1
负供电电压上限 -18 V -18 V
标称负供电电压 (Vsup) -15 V -15 V
功能数量 1 1
端子数量 8 8
最高工作温度 85 °C 70 °C
输出类型 OPEN-COLLECTOR OPEN-COLLECTOR
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP
封装等效代码 SOP8,.25 SOP8,.25
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 260
电源 +-15 V +-15 V
认证状态 Not Qualified Not Qualified
标称响应时间 200 ns 200 ns
座面最大高度 1.75 mm 1.75 mm
最大压摆率 6 mA 7.5 mA
供电电压上限 18 V 18 V
标称供电电压 (Vsup) 15 V 15 V
表面贴装 YES YES
技术 BIPOLAR BIPOLAR
温度等级 OTHER COMMERCIAL
端子面层 Tin (Sn) Tin (Sn)
端子形式 GULL WING GULL WING
端子节距 1.27 mm 1.27 mm
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 40 40
宽度 3.9 mm 3.9 mm
Base Number Matches 1 1
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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