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LM5100AMR

IC 3 A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, SOP-8, MOSFET Driver

器件类别：驱动程序和接口   

厂商名称：National Semiconductor（TI ）

厂商官网：http://www.ti.com

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
National Semiconductor（TI ）
包装说明
PLASTIC, SOP-8
Reach Compliance Code
compliant
ECCN代码
EAR99
Is Samacsys
N
高边驱动器
YES
接口集成电路类型
HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码
R-PDSO-G8
长度
4.9 mm
功能数量
1
端子数量
8
最高工作温度
125 °C
最低工作温度
-40 °C
标称输出峰值电流
3 A
封装主体材料
PLASTIC/EPOXY
封装代码
HLSOP
封装等效代码
SOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, HEAT SINK/SLUG, LOW PROFILE
电源
12 V
认证状态
Not Qualified
座面最大高度
1.68 mm
最大供电电压
14 V
最小供电电压
9 V
标称供电电压
12 V
表面贴装
YES
温度等级
AUTOMOTIVE
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
断开时间
0.045 µs
接通时间
0.045 µs
宽度
3.9 mm
Base Number Matches
1
文档预览
LM5100A/B/C, LM5101A/B/C 3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers
LM5100A/B/C
LM5101A/B/C
June 9, 2009
3A, 2A and 1A High Voltage High-Side and Low-Side Gate
Drivers
General Description
The LM5100A/B/C and LM5101A/B/C High Voltage Gate
Drivers are designed to drive both the high-side and the low-
side N-Channel MOSFETs in a synchronous buck or a half-
bridge configuration. The floating high-side driver is capable
of operating with supply voltages up to 100V. The “A” versions
provide a full 3A of gate drive while the “B” and “C” versions
provide 2A and 1A respectively. The outputs are indepen-
dently controlled with CMOS input thresholds (LM5100A/B/C)
or TTL input thresholds (LM5101A/B/C). An integrated high
voltage diode is provided to charge the high-side gate drive
bootstrap capacitor. A robust level shifter operates at high
speed while consuming low power and providing clean level
transitions from the control logic to the high-side gate driver.
Under-voltage lockout is provided on both the low-side and
the high-side power rails. These devices are available in the
standard SOIC-8 pin, PSOP-8 pin and the LLP-10 pin pack-
ages. The LM5100C and LM5101C are also available in
eMSOP-8 package.
Features
■
Drives both a high-side and low-side N-Channel
■
■
■
■
■
■
■
■
MOSFETs
Independent high and low driver logic inputs
Bootstrap supply voltage up to 118V DC
Fast propagation times (25 ns typical)
Drives 1000 pF load with 8 ns rise and fall times
Excellent propagation delay matching (3 ns typical)
Supply rail under-voltage lockout
Low power consumption
Pin compatible with HIP2100/HIP2101
Typical Applications
■
■
■
■
■
Current Fed push-pull converters
Half and Full Bridge power converters
Synchronous buck converters
Two switch forward power converters
Forward with Active Clamp converters
Package
■
■
■
■
SOIC-8
PSOP-8
LLP-10 (4 mm x 4 mm)
eMSOP-8 (LM5100/01C)
Simplified Block Diagram
20203103
FIGURE 1.
© 2009 National Semiconductor Corporation
202031
www.national.com
LM5100A/B/C, LM5101A/B/C
Input/Output Options
Part Number
LM5100A
LM5101A
LM5100B
LM5101B
LM5100C
LM5101C
Input Thresholds
CMOS
TTL
CMOS
TTL
CMOS
TTL
Peak Output Current
3A
3A
2A
2A
1A
1A
Connection Diagrams
20203101
20203102
20203136
20203135
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2
LM5100A/B/C, LM5101A/B/C
Ordering Information
Ordering Number
LM5100A/LM5101AM
LM5100A/LM5101AMX
LM5100A/LM5101AMR
LM5100A/LM5101AMRX
LM5100A /LM5101ASD
LM5100A/LM5101ASDX
LM5100B/LM5101BMA
LM5100B/LM5101BMAX
LM5100B/LM5101BSD
LM5100B/LM5101BSDX
LM5100C/LM5101CMA
LM5100C/LM5101CMAX
LM5100C /LM5101CSD
LM5100C/LM5101CSDX
LM5100C/LM5101CMYE
LM5100C/LM5101CMY
LM5100C/LM5101CMYX
Package Type
SOIC 8
SOIC 8
PSOP 8
PSOP 8
LLP 10
LLP 10
SOIC 8
SOIC 8
LLP 10
LLP 10
SOIC 8
SOIC 8
LLP 10
LLP 10
eMSOP-8
eMSOP-8
eMSOP-8
NSC Package Drawing
M08A
M08A
MRA08A
MRA08A
SDC10A
SDC10A
M08A
M08A
SDC10A
SDC10A
M08A
M08A
SDC10A
SDC10A
MUY08A
MUY08A
MUY08A
Supplied As
95 units shipped in anti static rails
2500 shipped in Tape & Reel
95 units shipped in anti static rails
2500 shipped in Tape & Reel
1000 shipped in Tape & Reel
4500 shipped in Tape & Reel
95 units shipped in anti static rails
2500 shipped in Tape & Reel
1000 shipped in Tape & Reel
4500 shipped in Tape & Reel
95 units shipped in anti static rails
2500 shipped in Tape & Reel
1000 shipped in Tape & Reel
4500 shipped in Tape & Reel
250 shipped in Tape & Reel
1000 shipped in Tape & Reel
3500 shipped in Tape & Reel
3
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LM5100A/B/C, LM5101A/B/C
Pin Descriptions
Pin #
SOIC-8 PSOP-8 LLP-10
1
2
1
2
1
2
eMSOP-8
1
2
Name
VDD
HB
Description
Positive gate drive
supply
High-side gate driver
bootstrap rail
Application Information
Locally decouple to VSS using low ESR/ESL capacitor
located as close to the IC as possible.
Connect the positive terminal of the bootstrap capacitor
to HB and the negative terminal to HS. The bootstrap
capacitor should be placed as close to the IC as
possible.
Connect to the gate of high-side MOSFET with a short,
low inductance path.
Connect to the bootstrap capacitor negative terminal
and the source of the high-side MOSFET.
3
4
5
3
4
5
3
4
7
3
4
5
HO
HS
HI
High-side gate driver
output
High-side MOSFET
source connection
High-side driver control The LM5100A/B/C inputs have CMOS type thresholds.
input
The LM5101A/B/C inputs have TTL type thresholds.
Unused inputs should be tied to ground and not left
open.
Low-side driver control The LM5100A/B/C inputs have CMOS type thresholds.
input
The LM5101A/B/C inputs have TTL type thresholds.
Unused inputs should be tied to ground and not left
open.
Ground return
Low-side gate driver
output
All signals are referenced to this ground.
Connect to the gate of the low-side MOSFET with a
short, low inductance path.
Solder to the ground plane under the IC to aid in heat
dissipation.
6
6
8
6
LI
7
8
7
8
EP
9
10
EP
7
8
EP
VSS
LO
EP (LLP and PSOP and eMSOP
packages)
Note: For LLP-10 and eMSOP-8 package, it is recommended that the exposed pad on the bottom of the package is soldered to ground plane on the
PC board, and that ground plane should extend out from beneath the IC to help dissipate heat. For LLP-10 package, pins 5 and 6 have no connection.
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4
LM5100A/B/C, LM5101A/B/C
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
VDD to VSS
HB to HS
LI or HI Input
LO Output
HO Output
HS to VSS (Note 6)
HB to VSS
−0.3V to +18V
−0.3V to +18V
−0.3V to V
DD
+0.3V
−0.3V to V
DD
+0.3V
V
HS
−0.3V to V
HB
+0.3V
−5V to +100V
118V
Junction Temperature
Storage Temperature Range
ESD Rating HBM (Note 2)
+150°C
−55°C to +150°C
2 kV
Recommended Operating
Conditions
VDD
HS
HB
HS Slew Rate
Junction Temperature
+9V to +14V
−1V to 100V
V
HS
+8V to V
HS
+14V
< 50 V/ns
−40°C to +125°C
Electrical Characteristics
Limits in standard type are for T
J
= 25°C only; limits in boldface type apply over the junction temperature (T
J
) range of -40°C to
+125°C. Minimum and Maximum limits are guaranteed through test, design, or statistical correlation. Typical values represent the
most likely parametric norm at T
J
= 25°C, and are provided for reference purposes only. Unless otherwise specified, V
DD
= V
HB
=
12V, V
SS
= V
HS
= 0V, No Load on LO or HO (Note 4).
Symbol
SUPPLY CURRENTS
I
DD
I
DDO
I
HB
I
HBO
I
HBS
I
HBSO
V
IL
V
IL
V
IHYS
V
IHYS
R
I
V
DDR
V
DDH
V
HBR
V
HBH
V
DL
V
DH
R
D
VDD Quiescent Current, LM5100A/B/C
VDD Quiescent Current, LM5101A/B/C
VDD Operating Current
Total HB Quiescent Current
Total HB Operating Current
HB to VSS Current, Quiescent
HB to VSS Current, Operating
Input Voltage Threshold LM5100A/B/C
Input Voltage Threshold LM5101A/B/C
Input Voltage Hysteresis LM5100A/B/C
Input Voltage Hysteresis LM5101A/B/C
Input Pulldown Resistance
VDD Rising Threshold
VDD Threshold Hysteresis
HB Rising Threshold
HB Threshold Hysteresis
Low-Current Forward Voltage
High-Current Forward Voltage
I
VDD-HB
= 100 µA
I
VDD-HB
= 100 mA
5.7
100
6.0
LI = HI = 0V
LI = HI = 0V
f = 500 kHz
LI = HI = 0V
f = 500 kHz
HS = HB = 100V
f = 500 kHz
Rising Edge
Rising Edge
4.5
1.3
0.1
0.25
2.0
0.06
1.6
0.1
0.4
5.4
1.8
500
50
200
6.9
0.5
6.6
0.4
0.52
0.8
1.0
0.85
1
1.65
7.1
400
7.4
6.3
2.3
0.2
0.4
3
0.2
3
10
mA
mA
mA
mA
µA
mA
V
V
mV
mV
kΩ
V
V
V
V
V
V
Ω
Parameter
Conditions
Min
Typ
Max
Units
INPUT PINS
UNDER VOLTAGE PROTECTION
BOOT STRAP DIODE
Dynamic Resistance LM5100A/B/C, LM5101A/B/ I
VDD-HB
= 100 mA
C
Low-Level Output Voltage LM5100A/LM5101A
Low-Level Output Voltage LM5100B/LM5101B
Low-Level Output Voltage LM5100C/LM5101C
I
HO
= I
LO
= 100 mA
LO & HO GATE DRIVER
V
OL
0.12
0.16
0.28
I
HO
= I
LO
= 100 mA
V
OH
= VDD– LO or
V
OH
= HB - HO
HO, LO = 0V
0.24
0.28
0.60
3
2
1
A
0.25
0.4
0.65
0.45
0.60
1.10
V
V
V
OH
High-Level Output Voltage LM5100A/LM5101A
High-Level Output Voltage LM5100B/LM5101B
High-Level Output Voltage LM5100C/LM5101C
I
OHL
Peak Pullup Current LM5100A/LM5101A
Peak Pullup Current LM5100B/LM5101B
Peak Pullup Current LM5100C/LM5101C
5
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参数对比
与LM5100AMR相近的元器件有：LM5100AM/NOPB、LM5100AMRX、LM5100AMX/NOPB、LM5100ASD/NOPB、LM5100ASDX/NOPB、LM5100ASDX、LM5100ASD、LM5100AMX。描述及对比如下：
型号 LM5100AMR LM5100AM/NOPB LM5100AMRX LM5100AMX/NOPB LM5100ASD/NOPB LM5100ASDX/NOPB LM5100ASDX LM5100ASD LM5100AMX
描述 IC 3 A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, SOP-8, MOSFET Driver IC 3 A HALF BRDG BASED MOSFET DRIVER, PDSO8, MS-012AA, SOIC-8, MOSFET Driver IC 3 A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, SOP-8, MOSFET Driver IC 3 A HALF BRDG BASED MOSFET DRIVER, PDSO8, MS-012AA, SOIC-8, MOSFET Driver IC 3 A HALF BRDG BASED MOSFET DRIVER, PDSO8, 4 X 4 MM, LLP-10, MOSFET Driver IC 3 A HALF BRDG BASED MOSFET DRIVER, PDSO8, 4 X 4 MM, LLP-10, MOSFET Driver IC 3 A HALF BRDG BASED MOSFET DRIVER, PDSO10, 4 X 4 MM, LLP-10, MOSFET Driver IC 3 A HALF BRDG BASED MOSFET DRIVER, PDSO10, 4 X 4 MM, LLP-10, MOSFET Driver IC 3 A HALF BRDG BASED MOSFET DRIVER, PDSO8, MS-012AA, SOIC-8, MOSFET Driver
是否Rohs认证 不符合 符合 不符合 符合 符合 符合 不符合 不符合 不符合
包装说明 PLASTIC, SOP-8 SOP, SOP8,.25 PLASTIC, SOP-8 SOP, SOP8,.25 HVSON, SOLCC10,.16,32 HVSON, SOLCC10,.16,32 4 X 4 MM, LLP-10 4 X 4 MM, LLP-10 MS-012AA, SOIC-8
Reach Compliance Code compliant compliant compliant compliant compliant compliant not_compliant not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
高边驱动器 YES YES YES YES YES YES YES YES YES
接口集成电路类型 HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 S-PDSO-N8 S-PDSO-N8 S-PDSO-N10 S-PDSO-N10 R-PDSO-G8
长度 4.9 mm 4.9 mm 4.9 mm 4.9 mm 4 mm 4 mm 4 mm 4 mm 4.9 mm
功能数量 1 1 1 1 1 1 1 1 1
端子数量 8 8 8 8 8 8 10 10 8
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
标称输出峰值电流 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 HLSOP SOP HLSOP SOP HVSON HVSON HVSON HVSON SOP
封装等效代码 SOP8,.25 SOP8,.25 SOP8,.25 SOP8,.25 SOLCC10,.16,32 SOLCC10,.16,32 SOLCC10,.16,32 SOLCC10,.16,32 SOP8,.25
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR SQUARE SQUARE SQUARE SQUARE RECTANGULAR
封装形式 SMALL OUTLINE, HEAT SINK/SLUG, LOW PROFILE SMALL OUTLINE SMALL OUTLINE, HEAT SINK/SLUG, LOW PROFILE SMALL OUTLINE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE
电源 12 V 12 V 12 V 12 V 12 V 12 V 12 V 12 V 12 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.68 mm 1.75 mm 1.68 mm 1.75 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 1.75 mm
最大供电电压 14 V 14 V 14 V 14 V 14 V 14 V 14 V 14 V 14 V
最小供电电压 9 V 9 V 9 V 9 V 9 V 9 V 9 V 9 V 9 V
标称供电电压 12 V 12 V 12 V 12 V 12 V 12 V 12 V 12 V 12 V
表面贴装 YES YES YES YES YES YES YES YES YES
温度等级 AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
端子形式 GULL WING GULL WING GULL WING GULL WING NO LEAD NO LEAD NO LEAD NO LEAD GULL WING
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
断开时间 0.045 µs 45 µs 0.045 µs 45 µs 45 µs 45 µs 0.045 µs 0.045 µs 0.045 µs
接通时间 0.045 µs 45 µs 0.045 µs 45 µs 45 µs 45 µs 0.045 µs 0.045 µs 0.045 µs
宽度 3.9 mm 3.9 mm 3.9 mm 3.9 mm 4 mm 4 mm 4 mm 4 mm 3.9 mm
厂商名称 National Semiconductor（TI ） National Semiconductor（TI ） National Semiconductor（TI ） National Semiconductor（TI ） National Semiconductor（TI ） National Semiconductor（TI ） - National Semiconductor（TI ） National Semiconductor（TI ）
Is Samacsys N N N N N N - - -
Base Number Matches 1 1 1 1 1 1 1 - -
JESD-609代码 - e3 - e3 e3 e3 e0 e0 e0
湿度敏感等级 - 1 - 1 1 1 1 1 1
峰值回流温度（摄氏度） - 260 - 260 260 260 260 260 235
端子面层 - Matte Tin (Sn) - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn85Pb15)
处于峰值回流温度下的最长时间 - 40 - 40 40 40 40 40 NOT SPECIFIED
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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