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LM709MWC

Operational Amplifier, 1 Func, 10000uV Offset-Max, BIPolar, WAFER

器件类别:放大器电路   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

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器件参数
参数名称
属性值
厂商名称
Rochester Electronics
包装说明
DIE,
Reach Compliance Code
unknown
ECCN代码
EAR99
Is Samacsys
N
Base Number Matches
1
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LM709 Operational Amplifier
February 1995
LM709
Operational Amplifier
General Description
The LM709 series is a monolithic operational amplifier in-
tended for general-purpose applications Operation is com-
pletely specified over the range of voltages commonly used
for these devices The design in addition to providing high
gain minimizes both offset voltage and bias currents Fur-
ther the class-B output stage gives a large output capability
with minimum power drain
External components are used to frequency compensate
the amplifier Although the unity-gain compensation network
specified will make the amplifier unconditionally stable in all
feedback configurations compensation can be tailored to
optimize high-frequency performance for any gain setting
The LM709C is the commercial-industrial version of the
LM709 It is identical to the LM709 except that it is specified
for operation from 0 C to
a
70 C
Connection Diagrams
Metal Can Package
Dual-In-Line Package
TL H 11477 – 6
Order Number LM709CN-8
See NS Package Number N08E
TL H 11477 – 4
Dual-In-Line Package
Order Number LM709AH LM709H or LM709CH
See NS Package Number H08C
TL H 11477 – 5
Order Number LM709CN
See NS Package Number N14A
C
1995 National Semiconductor Corporation
TL H 11477
RRD-B30M115 Printed in U S A
Absolute Maximum Ratings
(Note 3)
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Supply Voltage
g
18V
LM709 LM709A LM709C
Power Dissipation (Note 1)
LM709 LM709A
LM709C
Differential Input Voltage
LM709 LM709A LM709C
Input Voltage
LM709 LM709A LM709C
Output Short-Circuit Duration (T
A
e a
25 C)
LM709 LM709A LM709C
300 mW
250 mW
g
5V
g
10V
Storage Temperature Range
LM709 LM709A LM709C
Lead Temperature (Soldering 10 sec )
LM709 LM709A LM709C
b
65 C to
a
150 C
300 C
Operating Ratings
(Note 3)
Junction Temperature Range (Note 1)
LM709 LM709A
LM709C
Thermal Resistance (i
JA
)
H Package
8-Pin N Package
14-Pin N Package
b
55 C to
a
150 C
0 C to
a
100 C
150 C W (i
JC
) 45 C W
134 C W
109 C W
5 seconds
Electrical Characteristics
(Note 2)
Parameter
Input Offset Voltage
Input Bias Current
Input Offset Current
Input Resistance
Output Resistance
Supply Current
Transient Response
Risetime
Overshoot
Slew Rate
Input Offset Voltage
Conditions
Min
T
A
e
25 C R
S
s
10 kX
T
A
e
25 C
T
A
e
25 C
T
A
e
25 C
T
A
e
25 C
T
A
e
25 C V
S
e
g
15V
V
IN
e
20 mV C
L
s
100 pF
T
A
e
25 C
T
A
e
25 C
R
S
s
10 kX
T
A
T
A
T
A
T
A
e
e
e
e
LM709A
Typ
06
100
10
350
700
150
25
36
15
30
0 25
30
Max
20
200
50
150
Min
LM709
Typ
10
200
50
400
150
26
03
10
0 25
60
30
60
55
10
30
Max
50
500
200
50
Min
LM709C
Typ
20
300
100
250
150
26
03
10
0 25
10
60
12
66
10
30
Max
75
1500
500
Units
mV
nA
nA
kX
X
mA
ms
%
V
ms
mV
Average Temperature R
S
e
50X
Coefficient of
Input Offset Voltage
R
S
e
10 kX
Large Signal
Voltage Gain
Output Voltage Swing
Input Voltage Range
Common-Mode
Rejection Ratio
Supply Voltage
Rejection Ratio
Input Offset Current
Input Bias Current
Input Resistance
25
25
25
25
C to T
MAX
C to T
MIN
C to T
MAX
C to T
MIN
25
g
12
g
10
g
8
18
18
20
48
10
10
15
25
70
25
g
12
g
10
g
8
mV
C
V
S
e
g
15V R
L
t
2 kX
V
OUT
e
g
10V
V
S
e
g
15V R
L
e
10 kX
V
S
e
g
15V R
L
e
2 kX
V
S
e
g
15V
R
S
s
10 kX
R
S
s
10 kX
T
A
e
T
MAX
T
A
e
T
MIN
T
A
e
T
MIN
T
A
e
T
MIN
45
g
14
g
13
g
10
70
15
g
12
g
10
g
8
45
g
14
g
13
g
10
V mV
V
V
dB
200
400
750
20
mV
V
nA
mA
kX
g
14
g
13
80
110
40
35
40
03
100
50
250
06
70
90
25
20
100
05
150
200
500
15
65
90
25
75
125
0 36
85
170
40
100
50
250
Note 1
For operating at elevated temperatures the device must be derated based on a 150 C maximum junction temperature for LM709 LM709A and 100 C
maximum for L709C For operating at elevated temperatures the device must be derated based on thermal resistance
i
JA
T
J(MAX)
and T
A
Note 2
These specifications apply for
b
55 C
s
T
A
s
a
125 C for the LM709 LM709A and 0 C
s
T
A
s
a
70 C for the LM709C with the following conditions
g
9V
s
V
S
s g
15V C1
e
5000 pF R1
e
1 5 kX C2
e
200 pF and R2
e
51X
Note 3
Absolute Maximum Ratings indicate limits which if exceeded may result in damage Operating Ratings are conditions where the device is expected to be
functional but not necessarily within the guaranteed performance limits For guaranteed specifications and test conditions see the Electrical Characteristics
2
Schematic Diagram
TL H 11477 – 1
Typical Applications
Unity Gain Inverting Amplifier
FET Operational Amplifier
TL H 11477 – 3
TL H 11477 – 2
Voltage Follower
Offset Balancing Circuit
To be used with any capacitive loading on output
Pin connections shown are for metal can package
Should be equal to DC source resistance on input
TL H 11477 – 7
TL H 11477 – 8
3
Guaranteed Performance Characteristics
Input Common-Mode
Voltage Range
Output Voltage Swing
Voltage Gain
Supply Current
TL H 11477 – 9
4
Typical Performance Characteristics
Input Offset Current
Input Bias Current
Supply Current
Slew Rate as a Function of
Closed-Loop Gain Using
Recommended Compensation Networks
Frequency Response for
Various Closed-Loop Gains
Output Voltage Swing
as a Function of Frequency
Output Voltage Swing
Input Bias Current
as a Function of
Supply Voltage
TL H 11477 – 10
5
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参数对比
与LM709MWC相近的元器件有:LM709MDC。描述及对比如下:
型号 LM709MWC LM709MDC
描述 Operational Amplifier, 1 Func, 10000uV Offset-Max, BIPolar, WAFER Operational Amplifier, 1 Func, 10000uV Offset-Max, BIPolar, DIE
厂商名称 Rochester Electronics Rochester Electronics
包装说明 DIE, DIE,
Reach Compliance Code unknown unknown
ECCN代码 EAR99 EAR99
Is Samacsys N N
Base Number Matches 1 1
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