LESHAN RADIO COMPANY, LTD.
Low Noise Transistor
PNP Silicon
•
We declare that the material of product compliance with RoHS requirements.
LMBT5087LT1G
3
ORDERING INFORMATION
1
Device
LMBT5087LT1G
LMBT5087LT3G
Marking
2Q
2Q
Shipping
3000/Tape & Reel
10000/Tape & Reel
2
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
– 50
– 50
– 3.0
– 50
Unit
Vdc
Vdc
Vdc
mAdc
3
COLLECTOR
1
BASE
DEVICE MARKING
LMBT5087LT1G =2Q
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation RF-5 Board (1)
T
A
=25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
P
D
Symbol
P
D
Max
225
1.8
556
300
2.4
417
–55to+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
R
θJA
T
J
, T
stg
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
V
(BR)CEO
V
(BR)CBO
I
CBO
—
—
–10
–50
Min
– 50
– 50
Max
—
—
Unit
Vdc
Vdc
n Adc
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= –100
µAdc,
I
E
= 0)
Collector Cutoff Current
(V
CB
= –10 Vdc, I
E
= 0)
(V
CB
= –35 Vdc, I
E
= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1/7
LESHAN RADIO COMPANY, LTD.
LMBT5087LT1G
ELECTRICAL CHARACTERISTICS
(T
Characteristic
A
= 25°C unless otherwise noted) (Continued)
Symbol
h
FE
250
250
250
V
CE(sat)
V
BE(sat)
––
––
800
––
––
– 0.3
– 0.85
Vdc
Vdc
Min
Max
Unit
––
ON CHARACTERISTICS
DC Current Gain
(I
C
= –100µAdc, V
CE
= –5.0 Vdc)
(I
C
= –1.0 mAdc, V
CE
= –5.0 Vdc)
(I
C
= –10 mAdc, V
CE
= –5.0 Vdc)
Collector–Emitter Saturation Voltage
(I
C
= –10 mAdc, I
B
= –1.0 mAdc)
Base–Emitter Saturation Voltage
(I
C
= –10 mAdc, I
B
= –1.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= –500
µAdc,
V
CE
= –5.0 Vdc, f = 20 MHz)
Output Capacitance
(V
CB
= –5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Small–Signal Current Gain
(I
C
= –1.0mAdc, V
CE
= –5.0Vdc, f = 1.0 kHz)
Noise Figure
(I
C
= –20 mAdc, V
CE
= –5.0 Vdc,R
s
=10kΩ, f = 1.0 kHz)
(I
C
= –100µAdc, V
CE
= –5.0 Vdc,R
s
=3.0kΩ, f = 1.0 kHz)
f
T
40
—
250
—
4.0
900
MHz
pF
—
dB
C
obo
h
fe
NF
—
—
2.0
2.0
2/7
LESHAN RADIO COMPANY, LTD.
LMBT5087LT1G
TYPICAL NOISE CHARACTERISTICS
(V
CE
= – 5.0 Vdc, T
A
= 25°C)
10
BANDWIDTH = 1.0 Hz
R ~0
~
S
10.0
7.0
5.0
BANDWIDTH = 1.0 Hz
R ~
~
S
7.0
I
n
, NOISE CURRENT (pA)
e
n
, NOISE VOLTAGE (nV)
I
C
=10
µA
5.0
3.0
2.0
I
C
=1.0mA
300µA
30µA
3.0
100µA
1.0mA
300µA
1.0
0.7
0.5
0.3
0.2
100µA
30µA
10µA
2.0
1.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
0.1
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(V
CE
= – 5.0 Vdc, T
A
= 25°C)
1.0M
500k
BANDWIDTH = 1.0 Hz
1.0M
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
R
S
, SOURCE RESISTANCE (
Ω
)
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
20
30
50
70
100
BANDWIDTH = 1.0 Hz
R
S
, SOURCE RESISTANCE (
Ω
)
0.5dB
1.0dB
2.0dB
3.0dB
5.0dB
20
30
50
70
100
200
300
500
700 1.0K
0.5dB
1.0dB
2.0dB
3.0dB
5.0dB
200
300
500
700 1.0K
200
100
10
I
C
, COLLECTOR CURRENT (µA)
I
C
, COLLECTOR CURRENT (µA)
Figure 3. Narrow Band, 100 Hz
1.0M
500k
10 Hz to 15.7kHz
Figure 4. Narrow Band, 1.0 kHz
R
S
, SOURCE RESISTANCE (
Ω
)
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
20
30
50
70
100
200
300
Noise Figure is Defined as:
NF = 20 log
10
( –––––––––––––––)
4KTR
S
e
n 2
+ 4KTR
S
+ I
n2
R
S2
1/ 2
0.5dB
1.0dB
2.0dB
3.0 dB
5.0dB
500
700 1.0K
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
I
n
= Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10
–23
j/°K)
T = Temperature of the Source Resistance (°K)
R
s
= Source Resistance (
Ω
)
I
C
, COLLECTOR CURRENT (µA)
Figure 5. Wideband
8
3/7
LESHAN RADIO COMPANY, LTD.
LMBT5087LT1G
TYPICAL STATIC CHARACTERISTICS
1.0
100
V
CE
,COLLECTOR–EMITTERVOLTAGE(VOLTS)
I
C
, COLLECTOR CURRENT (mA)
T
A
=25°C
0.8
80
T
A
= 25°C
PULSE WIDTH =300
µs
DUTY CYCLE<2.0%
300µA
I
B
= 400
µA
350µA
250
µA
200
µA
150
µA
0.6
I
C
= 1.0 mA
10 mA
50mA
100 mA
60
0.4
40
100
µA
50µA
0.2
20
0
0.002 0.0050.01 0.02
0.05 0.1 0.2
0.5
1.0
2.0
5.0
10
20
0
0
5.0
10
15
20
25
30
35
40
I
B
, BASE CURRENT (mA)
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. Collector Saturation Region
θ
V
, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 7. Collector Characteristics
1.4
1.6
T
J
=25°C
1.2
*APPLIES for I
C
/ I
B
< h
FE
/ 2
0.8
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
∗ θ
VC
for V
CE(sat)
0
25°Cto125°C
–55°Cto25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 1.0 V
–0.8
25°Cto125°C
θ
VB
for V
BE
–55°Cto25°C
0.4
0.2
0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
–1.6
V
CE(sat)
@ I
C
/I
B
= 10
–2.4
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
4/7
LESHAN RADIO COMPANY, LTD.
LMBT5087LT1G
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
1000
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25°C
t, TIME (ns)
700
500
300
200
100
70
50
30
20
10
t
s
V
CC
=–3.0V
I
C
/I
B
= 10
I
B1
=I
B2
T
J
= 25°C
t, TIME (ns)
100
70
50
30
20
10
7.0
5.0
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
t
r
t
d
@ V
BE(off)
= 0.5 V
t
f
–1.0
–2.0
–3.0
–5.0 –7.0 –10
–20
–30
–50
–70 –100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Turn–On Time
f
T
, CURRENT– GAIN — BANDWIDTH PRODUCT (MHz)
500
10.0
Figure 11. Turn–Off Time
T
J
= 25°C
300
T
J
= 25°C
V
CE
=20 V
5.0 V
C, CAPACITANCE (pF)
7.0
C
ib
5.0
200
3.0
100
2.0
C
ob
70
50
0.5
0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 12. Current–Gain — Bandwidth Product
r ( t ) TRANSIENT THERMAL RESISTANCE(NORMALIZED)
1.0
0.7
0.5
0.3
0.2
Figure 13. Capacitance
D = 0.5
0.2
0.1
FIGURE 16
0.05
P
(pk)
0.02
0.01
t
SINGLE PULSE
1
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.02
DUTY CYCLE, D = t
1
/ t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN–569)
t
2
Z
θJA(t)
= r(t) • R
θJA
T
J(pk)
– T
A
= P
(pk)
Z
θJA(t)
1.0k
2.0k
5.0k
10k
20k
50k
100k
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
t, TIME (ms)
Figure 14. Thermal Response
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