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LMC6061AIN

Precision CMOS Single Micropower Operational Amplifier

器件类别:模拟混合信号IC    放大器电路   

厂商名称:National Semiconductor(TI )

厂商官网:http://www.ti.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
National Semiconductor(TI )
零件包装代码
DIP
包装说明
DIP, DIP8,.3
针数
8
Reach Compliance Code
unknown
ECCN代码
EAR99
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)
0.000004 µA
最小共模抑制比
72 dB
标称共模抑制比
85 dB
频率补偿
YES
最大输入失调电压
900 µV
JESD-30 代码
R-PDIP-T8
JESD-609代码
e0
长度
9.817 mm
低-偏置
YES
低-失调
YES
微功率
YES
负供电电压上限
标称负供电电压 (Vsup)
功能数量
1
端子数量
8
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装等效代码
DIP8,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
NOT SPECIFIED
功率
NO
电源
5/15 V
可编程功率
NO
认证状态
Not Qualified
座面最大高度
5.08 mm
最小摆率
0.01 V/us
标称压摆率
0.035 V/us
最大压摆率
0.038 mA
供电电压上限
16 V
标称供电电压 (Vsup)
5 V
表面贴装
NO
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
标称均一增益带宽
100 kHz
最小电压增益
50000
宽带
NO
宽度
7.62 mm
文档预览
LMC6061 Precision CMOS Single Micropower Operational Amplifier
November 1994
LMC6061
Precision CMOS Single Micropower Operational
Amplifier
General Description
The LMC6061 is a precision single low offset voltage, mi-
cropower operational amplifier, capable of precision single
supply operation. Performance characteristics include ultra
low input bias current, high voltage gain, rail-to-rail output
swing, and an input common mode voltage range that in-
cludes ground. These features, plus its low power consump-
tion, make the LMC6061 ideally suited for battery powered
applications.
Other applications using the LMC6061 include precision
full-wave rectifiers, integrators, references, sample-and-hold
circuits, and true instrumentation amplifiers.
This device is built with National’s advanced double-Poly
Silicon-Gate CMOS process.
For designs that require higher speed, see the LMC6081
precision single operational amplifier.
For a dual or quad operational amplifier with similar features,
see the LMC6062 or LMC6064 respectively.
PATENT PENDING
n
n
n
n
n
n
n
n
Low offset voltage: 100 µV
Ultra low supply current: 20 µA
Operates from 4.5V to 15V single supply
Ultra low input bias current: 10 fA
Output swing within 10 mV of supply rail, 100k load
Input common-mode range includes V
High voltage gain: 140 dB
Improved latchup immunity
Applications
n
n
n
n
n
n
n
Instrumentation amplifier
Photodiode and infrared detector preamplifier
Transducer amplifiers
Hand-held analytic instruments
Medical instrumentation
D/A converter
Charge amplifier for piezoelectric transducers
Features
(Typical Unless Otherwise Noted)
Connection Diagram
8-Pin DIP/SO
DS011422-1
Top View
Ordering Information
Package
Temperature Range
Military
−55˚C to +125˚C
8-Pin
Molded DIP
8-Pin
Small Outline
8-Pin
Ceramic DIP
LMC6061AMJ/883
LMC6061AMN
Industrial
−40˚C to +85˚C
LMC6061AIN
LMC6061IN
LMC6061AIM
LMC6061IM
J08A
M08A
Rail
Tape and Reel
Rail
N08E
Rail
NSC
Drawing
Transport
Media
© 1999 National Semiconductor Corporation
DS011422
www.national.com
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Differential Input Voltage
Voltage at Input/Output Pin
Supply Voltage (V
+
− V
)
Output Short Circuit to V
+
Output Short Circuit to V
Lead Temperature
(Soldering, 10 sec.)
Storage Temp. Range
Junction Temperature
ESD Tolerance (Note 4)
Current at Input Pin
Current at Output Pin
Current at Power Supply Pin
Power Dissipation
±
10 mA
±
30 mA
40 mA
(Note 3)
±
Supply Voltage
(V
+
) +0.3V,
(V
) −0.3V
16V
(Note 10)
(Note 2)
260˚C
−65˚C to +150˚C
150˚C
2 kV
Operating Ratings
(Note 1)
Temperature Range
LMC6061AM
LMC6061AI, LMC6082I
Supply Voltage
Thermal Resistance (θ
JA
) (Note 11)
N Package, 8-Pin Molded DIP
M Package, 8-Pin Surface Mount
Power Dissipation
−55˚C
T
J
+125˚C
−40˚C
T
J
+85˚C
4.5V
V
+
15.5V
115˚C/W
193˚C/W
(Note 9)
DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C.
Boldface
limits apply at the temperature extremes. V
+
= 5V, V
= 0V, V
CM
= 1.5V, V
O
= 2.5V and R
L
>
1M unless otherwise specified.
Typ
Symbol
V
OS
TCV
OS
I
B
I
OS
R
IN
CMRR
+PSRR
−PSRR
V
CM
Parameter
Input Offset Voltage
Input Offset Voltage
Average Drift
Input Bias Current
Input Offset Current
Input Resistance
Common Mode
Rejection Ratio
Positive Power Supply
Rejection Ratio
Negative Power Supply
Rejection Ratio
Input Common-Mode
Voltage Range
V
+
= 5V and 15V
for CMRR
60 dB
V − 1.9
A
V
Large Signal
Voltage Gain
R
L
= 100 kΩ
(Note 7)
Sinking
R
L
= 25 kΩ
(Note 7)
Sinking
2000
Sourcing
3000
3000
Sourcing
4000
+
+
+
LMC6061AM
Limit
(Note 6)
350
1200
LMC6061AI
Limit
(Note 6)
350
900
LMC6061I
Limit
(Note 6)
800
1300
µV
Max
µV/˚C
pA
Units
Conditions
(Note 9)
100
1.0
0.010
100
0.005
100
4
2
75
72
75
72
84
81
−0.1
0
V − 2.3
V − 2.5
400
300
180
100
400
150
100
50
+
+
+
+
4
2
66
63
66
63
74
71
−0.1
0
V − 2.3
V − 2.5
300
200
90
60
200
80
70
35
Max
pA
Max
Tera
dB
Min
dB
Min
dB
Min
V
Max
V
Min
V/mV
Min
V/mV
Min
V/mV
Min
V/mV
Min
>
10
0V
V
CM
12.0V
V
+
= 15V
5V
V
+
15V
V
O
= 2.5V
0V
V
−10V
85
85
100
−0.4
75
70
75
70
84
70
−0.1
0
V − 2.3
V − 2.6
400
200
180
70
400
150
100
35
www.national.com
2
DC Electrical Characteristics
(Continued)
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C.
Boldface
limits apply at the temperature extremes. V
+
= 5V, V
= 0V, V
CM
= 1.5V, V
O
= 2.5V and R
L
>
1M unless otherwise specified.
Typ
Symbol
V
O
Parameter
Output Swing
+
LMC6061AM
Limit
(Note 6)
4.990
4.970
0.010
0.030
4.975
4.955
0.020
0.045
14.975
14.955
0.025
0.050
14.900
14.800
0.050
0.200
16
8
16
7
15
9
24
7
24
35
30
40
LMC6061AI
Limit
(Note 6)
4.990
4.980
0.010
0.020
4.975
4.965
0.020
0.035
14.975
14.965
0.025
0.035
14.900
14.850
0.050
0.150
16
10
16
8
15
10
24
8
24
32
30
38
LMC6061I
Limit
(Note 6)
4.950
4.925
0.050
0.075
4.950
4.850
0.050
0.150
14.950
14.925
0.050
0.075
14.850
14.800
0.100
0.200
13
8
16
8
15
10
24
8
32
40
40
48
V
Min
V
Max
V
Min
V
Max
V
Min
V
Max
V
Min
V
Max
mA
Min
mA
Min
mA
Min
mA
Min
µA
Max
µA
Max
Units
Conditions
V = 5V
R
L
= 100 kΩ to 2.5V
(Note 9)
4.995
0.005
V = 5V
R
L
= 25 kΩ to 2.5V
+
4.990
0.010
V
+
= 15V
R
L
= 100 kΩ to 7.5V
14.990
0.010
V = 15V
R
L
= 25 kΩ to 7.5V
+
14.965
0.025
I
O
Output Current
V
+
= 5V
Sourcing, V
O
= 0V
Sinking, V
O
= 5V
22
21
25
35
20
24
I
O
Output Current
V
+
= 15V
Sourcing, V
O
= 0V
Sinking, V
O
= 13V
I
S
Supply Current
(Note 10)
V
+
= +5V, V
O
= 1.5V
V = +15V, V
O
= 7.5V
+
AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C,
Boldface
limits apply at the temperature extremes. V
+
= 5V,
V
= 0V, V
CM
= 1.5V, V
O
= 2.5V and R
L
>
1M unless otherwise specified.
Typ
Symbol
SR
GBW
θ
m
e
n
i
n
T.H.D.
Slew Rate
Gain-Bandwidth Product
Phase Margin
Input-Referred Voltage Noise
Input-Referred Current Noise
Total Harmonic Distortion
F = 1 kHz
F = 1 kHz
F = 1 kHz, A
V
= −5
R
L
= 100 kΩ, V
O
= 2 V
PP
0.01
%
Parameter
(Note 8)
Conditions
(Note 5)
35
100
50
83
0.0002
LMC6061AM
Limit
(Note 6)
20
8
LMC6061AI
Limit
(Note 6)
20
10
LMC6061I
Limit
(Note 6)
15
7
V/ms
Min
kHz
Deg
Units
±
5V Supply
3
www.national.com
AC Electrical Characteristics
(Continued)
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is in-
tended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed.
Note 2:
Applies to both single-supply and split-supply operation. Continous short circuit operation at elevated ambient temperature can result in exceeding the maxi-
mum allowed junction temperature of 150˚C. Output currents in excess of
±
30 mA over long term may adversely affect reliability.
Note 3:
The maximum power dissipation is a function of T
J(Max)
,
θ
JA
, and T
A
. The maximum allowable power dissipation at any ambient temperature is P
D
= (T
J(Max)
− T
A
)/θ
JA
.
Note 4:
Human body model, 1.5 kΩ in series with 100 pF.
Note 5:
Typical values represent the most likely parametric norm.
Note 6:
All limits are guaranteed by testing or statistical analysis.
Note 7:
V
+
= 15V, V
CM
= 7.5V and R
L
connected to 7.5V. For Sourcing tests, 7.5V
V
O
11.5V. For Sinking tests, 2.5V
V
O
7.5V.
Note 8:
V
+
= 15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates.
Note 9:
For operating at elevated temperatures the device must be derated based on the thermal resistance
θ
JA
with P
D
= (T
J
–T
A
)/θ
JA
.
Note 10:
Do not connect output to V
+
, when V
+
is greater than 13V or reliability witll be adversely affected.
Note 11:
All numbers apply for packages soldered directly into a PC board.
Note 12:
For guaranteed Military Temperature Range parameters see RETSMC6061X.
Typical Performance Characteristics
Distribution of LMC6061
Input Offset Voltage
(T
A
= +25˚C)
V
S
=
±
7.5V, T
A
= 25˚C, Unless otherwise specified
Distribution of LMC6061
Input Offset Voltage
(T
A
= +125˚C)
Distribution of LMC6061
Input Offset Voltage
(T
A
= −55˚C)
DS011422-15
DS011422-16
DS011422-17
Input Bias Current
vs Temperature
Supply Current
vs Supply Voltage
Input Voltage
vs Output Voltage
DS011422-18
DS011422-19
DS011422-20
www.national.com
4
Typical Performance Characteristics
specified (Continued)
Common Mode
Rejection Ratio
vs Frequency
V
S
=
±
7.5V, T
A
= 25˚C, Unless otherwise
Power Supply Rejection
Ratio vs Frequency
Input Voltage Noise
vs Frequency
DS011422-22
DS011422-21
DS011422-23
Output Characteristics
Sourcing Current
Output Characteristics
Sinking Current
Gain and Phase Response
vs Temperature
(−55˚C to +125˚C)
DS011422-24
DS011422-25
DS011422-26
Typical Performance Characteristics
Gain and Phase
Response vs Capacitive Load
with R
L
= 20 kΩ
V
S
=
±
7.5V, T
A
= 25˚C, Unless otherwise specified
Open Loop
Frequency Response
Gain and Phase
Response vs Capacitive Load
with R
L
= 500 kΩ
DS011422-29
DS011422-27
DS011422-28
5
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参数对比
与LMC6061AIN相近的元器件有:LMC6061、LMC6061AIM、LMC6061AMJ/883、LMC6061AMN、LMC6061IM、LMC6061IN。描述及对比如下:
型号 LMC6061AIN LMC6061 LMC6061AIM LMC6061AMJ/883 LMC6061AMN LMC6061IM LMC6061IN
描述 Precision CMOS Single Micropower Operational Amplifier Precision CMOS Single Micropower Operational Amplifier Precision CMOS Single Micropower Operational Amplifier Precision CMOS Single Micropower Operational Amplifier Precision CMOS Single Micropower Operational Amplifier Precision CMOS Single Micropower Operational Amplifier Precision CMOS Single Micropower Operational Amplifier
是否Rohs认证 不符合 - 不符合 - 不符合 不符合 不符合
零件包装代码 DIP - SOIC - DIP SOIC DIP
包装说明 DIP, DIP8,.3 - SOIC-8 - 0.300 INCH, PLASTIC, DIP-8 SOIC-8 DIP, DIP8,.3
针数 8 - 8 - 8 8 8
Reach Compliance Code unknown - _compli - unknow _compli unknow
ECCN代码 EAR99 - EAR99 - EAR99 EAR99 EAR99
放大器类型 OPERATIONAL AMPLIFIER - OPERATIONAL AMPLIFIER - OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
架构 VOLTAGE-FEEDBACK - VOLTAGE-FEEDBACK - VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB) 0.000004 µA - 0.000004 µA - 0.0001 µA 0.000004 µA 0.000004 µA
最小共模抑制比 72 dB - 72 dB - 70 dB 63 dB 63 dB
标称共模抑制比 85 dB - 85 dB - 85 dB 85 dB 85 dB
频率补偿 YES - YES - YES YES YES
最大输入失调电压 900 µV - 900 µV - 1200 µV 1300 µV 1300 µV
JESD-30 代码 R-PDIP-T8 - R-PDSO-G8 - R-PDIP-T8 R-PDSO-G8 R-PDIP-T8
JESD-609代码 e0 - e0 - e0 e0 e0
长度 9.817 mm - 4.9 mm - 9.817 mm 4.9 mm 9.817 mm
低-偏置 YES - YES - YES YES YES
低-失调 YES - YES - NO NO NO
微功率 YES - YES - YES YES YES
功能数量 1 - 1 - 1 1 1
端子数量 8 - 8 - 8 8 8
最高工作温度 85 °C - 85 °C - 125 °C 85 °C 85 °C
最低工作温度 -40 °C - -40 °C - -55 °C -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP - SOP - DIP SOP DIP
封装等效代码 DIP8,.3 - SOP8,.25 - DIP8,.3 SOP8,.25 DIP8,.3
封装形状 RECTANGULAR - RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE - SMALL OUTLINE - IN-LINE SMALL OUTLINE IN-LINE
峰值回流温度(摄氏度) NOT SPECIFIED - 235 - NOT SPECIFIED 235 NOT SPECIFIED
功率 NO - NO - NO NO NO
电源 5/15 V - 5/15 V - 5/15 V 5/15 V 5/15 V
可编程功率 NO - NO - NO NO NO
认证状态 Not Qualified - Not Qualified - Not Qualified Not Qualified Not Qualified
座面最大高度 5.08 mm - 1.75 mm - 5.08 mm 1.75 mm 5.08 mm
最小摆率 0.01 V/us - 0.01 V/us - 0.008 V/us 0.007 V/us 0.007 V/us
标称压摆率 0.035 V/us - 0.035 V/us - 0.035 V/us 0.035 V/us 0.035 V/us
最大压摆率 0.038 mA - 0.038 mA - 0.04 mA 0.048 mA 0.048 mA
供电电压上限 16 V - 16 V - 16 V 16 V 16 V
标称供电电压 (Vsup) 5 V - 5 V - 5 V 5 V 5 V
表面贴装 NO - YES - NO YES NO
技术 CMOS - CMOS - CMOS CMOS CMOS
温度等级 INDUSTRIAL - INDUSTRIAL - MILITARY INDUSTRIAL INDUSTRIAL
端子面层 Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE - GULL WING - THROUGH-HOLE GULL WING THROUGH-HOLE
端子节距 2.54 mm - 1.27 mm - 2.54 mm 1.27 mm 2.54 mm
端子位置 DUAL - DUAL - DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED - 30 - NOT SPECIFIED 30 NOT SPECIFIED
标称均一增益带宽 100 kHz - 100 kHz - 100 kHz 100 kHz 100 kHz
最小电压增益 50000 - 50000 - 35000 35000 35000
宽带 NO - NO - NO NO NO
宽度 7.62 mm - 3.9 mm - 7.62 mm 3.9 mm 7.62 mm
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