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please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltages (V
+
– V
−
)
ESD Tolerance
Human Body (Note 4)
Machine Model (Note 5)
Charged Device Model
Storage Temperature Range
5.5V
2000V
200V
1000V
−65°C to +150°C
Junction Temperature (Note 3)
Soldering Information
Infrared or Convection (35 sec.)
+150°C
235°C
Operating Ratings
(Note 1)
Supply Voltage (V
+
– V
−
)
2.4V to 5.0V
Temperature Range (Notes 2, 3)
−40°C to +85°C
Package Thermal Resistance (Notes 2, 3)
LLP-8 (θ
JA
)
217°C/W
2.7V Electrical Characteristics
Unless otherwise specified, all limits are guaranteed for T
J
= 25°C, V
DD
= 2.7V, V
SS
= 0V, V
CM
= 1V, Enable
1,2
= V
DD
, C
L
= 10 pF,
R
L
= 30 kΩ, Load is connected to V
SS
, C
COUPLING
= 10 nF.
Boldface
limits apply at temperature range extremes of operating
condition. See (Note 2)
Symbol
Parameter
Conditions
Min
(Note 7)
Typ
(Note 6)
78
60
4.9
−123
−132
13
84
41
6
5
1 V
PP
Step
0.1 V
PP
Step
V
IN
= 2 V
PP
Enable
1,2
= V
DD
; No Load
Enable
1
= V
DD
, Enable
2
= V
SS
, No
Load
Enable
1,2
= V
SS
; No Load
PSRR
A
CL
V
OS
TC V
OS
R
OUT
Power Supply Rejection Ratio
Small Signal Voltage Gain
Output Offset Voltage
Temperature Coefficient Output
Offset Voltage (Note 9)
Output Resistance
f = 100 kHz
f = 38.4 MHz
DC (3.0V to 5.0V)
V
IN
= 0.2 V
PP
65
64
0.95
120
37
106
2.7
2.9
1.5
1.6
41
46
Max
(Note 7)
Units
Frequency Domain Response
SSBW
LSBW
GFN
φ
n
e
n
I
SOLATION
CT
t
r
t
f
t
s
OS
SR
I
S
Small Signal Bandwidth
Large Signal Bandwidth
Gain Flatness < 0.1 dB
Phase Noise
V
IN
= 100 mV
PP
; −3 dB
V
IN
= 1.0 V
PP
; −3 dB
f > 100 kHz
V
IN
= 1 V
PP
, f
C
= 38.4 MHz,
Δf
= 1 kHz
V
IN
= 1 V
PP
, f
C
= 38.4 MHz,
Δf
= 10 kHz
Input-Referred Voltage Noise
Output to Input
Crosstalk Rejection
Rise Time
Fall Time
Settling Time to 0.1%
Overshoot
Slew Rate (Note 8)
Supply Current
f = 1 MHz, R
SOURCE
= 50Ω
f = 1 MHz, R
SOURCE
= 50Ω
f = 38.4 MHz, V
IN
= 1 V
PP
0.1 V
PP
Step (10-90%)
MHz
MHz
MHz
dBc/Hz
dBc/Hz
nV/
dB
dB
ns
ns
ns
%
V/µs
Distortion and Noise Performance
Time Domain Response
Static DC Performance
2.3
1.3
30
68
1.0
-0.5
2.8
0.6
166
1.05
17
18
mA
mA
μA
dB
V/V
mV
µV/°C
Ω
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2
LMH2180
Symbol
Parameter
Conditions
Min
(Note 7)
Typ
(Note 6)
137
137
1.3
1.3
4.5
4.2
Max
(Note 7)
Units
Miscellaneous Performance
R
IN
C
IN
Z
IN
V
O
Input Resistance per Buffer
Input Capacitance per Buffer
Input Impedance
Output Swing Positive
Output Swing Negative
I
SC
Output Short-Circuit Current
(Notes 10, 11)
Enable = V
DD
Enable = V
SS
Enable = V
DD
Enable = V
SS
f = 38.4 MHz, Enable = V
DD
f = 38.4 MHz, Enable = V
SS
V
IN
= V
DD
V
IN
= V
SS
Sourcing, V
IN
= V
DD
, V
OUT
= V
SS
Sinking, V
IN
= V
SS
, V
OUT
= V
DD
V
en_hmin
V
en_lmax
Enable High Active Minimum Voltage
Enable Low Inactive Maximum
Voltage
−21
−18
23
15
2.66
2.65
kΩ
pF
kΩ
V
35
37
mV
2.69
19
−25
mA
25
1.2
0.6
V
5V Electrical Characteristics
Unless otherwise specified, all limits are guaranteed for T
J
= 25°C, V
DD
= 5V, V
SS
= 0V, V
CM
= 1V, Enable
1,2
= V
DD
, C
L
= 10 pF,
R
L
= 30 kΩ, Load is connected to V
SS
, C
COUPLING
= 10 nF.
Boldface
limits apply at temperature range extremes of operating
condition. See (Note 2)
Symbol
Parameter
Conditions
Min
(Note 7)
Typ
(Note 6)
87
68
25
−123
−132
12
84
59
6
6
1 V
PP
Step
0.1V
PP
Step
V
IN
= 2 V
PP
Enable
1,2
= V
DD
; No Load
Enable
1
= V
DD
, Enable
2
= V
SS
; No
Load
Enable
1,2
= V
SS
; No Load
70
13
124
4.0
4.1
2.2
2.3
43
49
Max
(Note 7)
Units
Frequency Domain Response
SSBW
LSBW
GFN
φ
n
e
n
I
SOLATION
CT
t
r
t
f
t
s
OS
SR
I
S
Small Signal Bandwidth
Large Signal Bandwidth
Gain Flatness < 0.1 dB
Phase Noise
V
IN
= 100 mV
PP
; −3 dB
V
IN
= 1.0 V
PP
; −3 dB
f > 100 kHz
V
IN
= 1 V
PP
, f
C
= 38.4 MHz,
Δf
= 1 kHz
V
IN
= 1 V
PP
, f
C
= 38.4 MHz,
Δf
= 10 kHz
Input-Referred Voltage Noise
Output to Input
Crosstalk Rejection
Rise Time
Fall Time
Settling Time to 0.1%
Overshoot
Slew Rate (Note 8)
Supply Current
f = 1 MHz, R
SOURCE
= 50Ω
f = 1 MHz, R
SOURCE
= 50Ω
f = 38.4 MHz, P
IN
= 0 dBm
0.1 V
PP
Step (10-90%)
MHz
MHz
MHz
dBc/Hz
dBc/Hz
nV/
dB
dB
ns
ns
ns
%
V/µs
Distortion and Noise Performance
Time Domain Response
Static DC Performance
3.4
1.8
32
mA
mA
μA
3
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LMH2180
Symbol
PSRR
A
CL
V
OS
TC V
OS
R
OUT
Parameter
Power Supply Rejection Ratio
Small Signal Voltage Gain
Output Offset Voltage
Temperature Coefficient Output
Offset Voltage (Note 9)
Output Resistance
f = 100 kHz
f = 38.4 MHz
Conditions
DC (3.0V to 5.0V)
V
IN
= 0.2 V
PP
Min
(Note 7)
65
64
0.95
Typ
(Note 6)
68
1.0
−1.4
2.4
0.5
126
138
138
1.3
1.3
4.3
4.2
Max
(Note 7)
Units
dB
1.05
21
22
V/V
mV
µV/°C
Ω
Miscellaneous Performance
R
IN
C
IN
Z
IN
V
O
Input Resistance per Buffer
Input Capacitance per Buffer
Input Impedance
Output Swing Positive
Output Swing Negative
I
SC
Output Short-Circuit Current
(Notes 10, 11)
Enable = V
DD
Enable = V
SS
Enable = V
DD
Enable = V
SS
f = 38.4 MHz, Enable = V
DD
f = 38.4 MHz, Enable = V
SS
V
IN
= V
DD
V
IN
= V
SS
Sourcing, V
IN
= V
DD
, V
OUT
= V
SS
Sinking, V
IN
= V
SS
, V
OUT
= V
DD
V
en_hmin
V
en_lmax
Enable High Active Minimum Voltage
Enable Low Inactive Maximum
Voltage
−80
−62
60
43
4.96
4.95
kΩ
pF
kΩ
V
35
50
mV
4.99
10
−90
mA
65
1.2
0.6
V
Note 1:
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of the device reliability
and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in
the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the
device should not be operated beyond such conditions. All voltages are measured with respect to the ground pin, unless otherwise specified.
Note 2:
The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as otherwise modified
or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed.
Note 3:
The maximum power dissipation must be derated at elevated temperatures and is dictated by T
J(MAX)
, θ
JA
, and the ambient temperature T
A
. The maximum
allowable power dissipation is P
DMAX
= (T
JMAX
− T
A
) / θ
JA
or the number given in the
Absolute Maximum Ratings,
whichever is lower.
Note 4:
Human body model, applicable std. JESD22–A114C.
Note 5:
Machine model, applicable std. JESD22–A115–A.
Note 6:
Typical values represent the most likely parametric norms at T
A
= +25°C, and at the Recommended Operation Conditions at the time of product
characterization and are not guaranteed.
Note 7:
Datasheet min/max specification limits are guaranteed by test or statistical analysis.
Note 8:
Slew rate is the average of the rising and falling slew rates.
Note 9:
Average Temperature Coefficient is determined by dividing the changing in a parameter at temperature extremes by the total temperature change.
Note 10:
Short−Circuit test is a momentary test. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed
junction temperature of 150°C.
Note 11:
Positive current corresponds to current flowing into the device.
