LMH6642, LMH6643, LMH6644
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SNOS966P – MAY 2001 – REVISED MARCH 2013
LMH6642/LMH6643/LMH6644 Low Power, 130MHz, 75mA Rail-to-Rail Output Amplifiers
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LMH6642, LMH6643, LMH6644
1
FEATURES
(V
S
= ±5V, T
A
= 25°C, R
L
= 2kΩ, A
V
= +1. Typical
Values Unless Specified).
2
DESCRIPTION
The LMH664X family true single supply voltage
feedback amplifiers offer high speed (130MHz), low
distortion (−62dBc), and exceptionally high output
current (approximately 75mA) at low cost and with
reduced power consumption when compared against
existing devices with similar performance.
Input common mode voltage range extends to 0.5V
below V
−
and 1V from V
+
. Output voltage range
extends to within 40mV of either supply rail, allowing
wide dynamic range especially desirable in low
voltage applications. The output stage is capable of
approximately 75mA in order to drive heavy loads.
Fast output Slew Rate (130V/µs) ensures large peak-
to-peak output swings can be maintained even at
higher speeds, resulting in exceptional full power
bandwidth of 40MHz with a 3V supply. These
characteristics, along with low cost, are ideal features
for a multitude of industrial and commercial
applications.
Careful attention has been paid to ensure device
stability under all operating voltages and modes. The
result is a very well behaved frequency response
characteristic (0.1dB gain flatness up the 12MHz
under 150Ω load and A
V
= +2) with minimal peaking
(typically 2dB maximum) for any gain setting and
under both heavy and light loads. This along with fast
settling time (68ns) and low distortion allows the
device to operate well in ADC buffer, and high
frequency filter applications as well as other
applications.
This device family offers professional quality video
performance with low DG (0.01%) and DP (0.01°)
characteristics. Differential Gain and Differential
Phase characteristics are also well maintained under
heavy loads (150Ω) and throughout the output
voltage range. The LMH664X family is offered in
single (LMH6642), dual (LMH6643), and quad
(LMH6644) options.
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
−3dB
BW (A
V
= +1) 130MHz
Supply Voltage Range 2.7V to 12.8V
Slew Rate
(1)
, (A
V
=
−1)
130V/µs
Supply Current (no load) 2.7mA/amp
Output Short Circuit Current +115mA/−145mA
Linear Output Current ±75mA
Input Common Mode Volt. 0.5V Beyond V
−
, 1V
from V
+
Output Voltage Swing 40mV from Rails
Input Voltage Noise (100kHz) 17nV/√Hz
Input Current Noise (100kHz) 0.9pA/√Hz
THD (5MHz, R
L
= 2kΩ, V
O
= 2V
PP
, A
V
= +2)
−62dBc
Settling Time 68ns
Fully Characterized for 3V, 5V, and ±5V
Overdrive Recovery 100ns
Output Short Circuit Protected
(2)
No Output Phase Reversal with CMVR
Exceeded
APPLICATIONS
•
•
•
•
•
(1)
(2)
Active Filters
CD/DVD ROM
ADC Buffer Amp
Portable Video
Current Sense Buffer
Slew rate is the average of the rising and falling slew rates.
Output short circuit duration is infinite for V
S
< 6V at room
temperature and below. For V
S
> 6V, allowable short circuit
duration is 1.5ms.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
Copyright © 2001–2013, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LMH6642, LMH6643, LMH6644
SNOS966P – MAY 2001 – REVISED MARCH 2013
www.ti.com
Closed Loop Gain vs. Frequency for Various Gain
+3
+2
8.0
V
S
= ±1.5V
R
L
= 2k
V
OUT
= 0.2V
PP
A
V
= +1
6.0
4.0
2.0
Large Signal Frequency Response
±2.5V
±5V
4V
PP
2V
PP
NORMALIZED GAIN (dB)
+1
0
-1
-2
-3
A
V
= +10
A
V
= +5
A
V
= +2
A
V
= +2
10k
100k
1M
10M
100M 500M
R
F
= R
L
= 2k
100k
1M
10M
200M
GAIN (dB)
0.0
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 1.
Figure 2.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
ESD Tolerance
(1) (2)
2KV
200V
1000V
(3)
(4)
(5)
V
IN
Differential
Output Short Circuit Duration
Supply Voltage (V - V )
Voltage at Input/Output pins
Input Current
Storage Temperature Range
Junction Temperature
Soldering Information
(8)
+
−
±2.5V
See
(6) (7)
,
13.5V
V
+
+0.8V, V
−
−0.8V
±10mA
−65°C
to +150°C
+150°C
Infrared or Convection Reflow (20 sec)
Wave Soldering Lead Temp.(10 sec)
235°C
260°C
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
Human body model, 1.5kΩ in series with 100pF.
Machine Model, 0Ω in series with 200pF.
CDM: Charge Device Model
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
Output short circuit duration is infinite for V
S
< 6V at room temperature and below. For V
S
> 6V, allowable short circuit duration is 1.5ms.
The maximum power dissipation is a function of T
J(MAX)
,
θ
JA
, and T
A
. The maximum allowable power dissipation at any ambient
temperature is P
D
= (T
J(MAX)
- T
A
)/
θ
JA
. All numbers apply for packages soldered directly onto a PC board.
2
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SNOS966P – MAY 2001 – REVISED MARCH 2013
(1)
Operating Ratings
Supply Voltage (V
+
– V
−
)
2.7V to 12.8V
(2)
(2)
Junction Temperature Range
Package Thermal Resistance
−40°C
to +85°C
(θ
JA
)
5-Pin SOT-23
8-Pin SOIC
8-Pin VSSOP
14-Pin SOIC
14- Pin TSSOP
265°C/W
190°C/W
235°C/W
145°C/W
155°C/W
(1)
(2)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
The maximum power dissipation is a function of T
J(MAX)
,
θ
JA
, and T
A
. The maximum allowable power dissipation at any ambient
temperature is P
D
= (T
J(MAX)
- T
A
)/
θ
JA
. All numbers apply for packages soldered directly onto a PC board.
3V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at T
J
= 25°C, V
+
= 3V, V
−
= 0V, V
CM
= V
O
= V
+
/2, V
ID
(input differential
voltage) as noted (where applicable) and R
L
= 2kΩ to V
+
/2.
Boldface
limits apply at the temperature extremes.
Symbol
BW
BW
0.1dB
PBW
e
n
i
n
THD
DG
−3dB
BW
0.1dB Gain Flatness
Full Power Bandwidth
Input-Referred Voltage Noise
Input-Referred Current Noise
Total Harmonic Distortion
Differential Gain
Parameter
Conditions
A
V
= +1, V
OUT
= 200mV
PP
A
V
= +2,
−1,
V
OUT
= 200mV
PP
A
V
= +2, R
L
= 150Ω to V+/2,
R
L
= 402Ω, V
OUT
= 200mV
PP
A
V
= +1,
−1dB,
V
OUT
= 1V
PP
f = 100kHz
f = 1kHz
f = 100kHz
f = 1kHz
f = 5MHz, V
O
= 2V
PP
, A
V
=
−1,
R
L
= 100Ω to V
+
/2
V
CM
= 1V, NTSC, A
V
= +2
R
L
=150Ω to V
+
/2
R
L
=1kΩ to V /2
DP
Differential Phase
V
CM
= 1V, NTSC, A
V
= +2
R
L
=150Ω to V
+
/2
R
L
=1kΩ to V /2
CT Rej.
T
S
SR
V
OS
Cross-Talk Rejection
Settling Time
Slew Rate
(3)
+
+
Min
(1)
Typ
(2)
Max
(1)
Units
80
115
46
19
40
17
48
0.90
3.3
−48
0.17
MHz
MHz
MHz
nV/√Hz
pA/√Hz
dBc
%
0.03
0.05
deg
0.03
47
68
90
120
±1
±1
±5
−1.50
20
3
−2.60
−3.25
800
1000
±5
±7
±3.4
±7
dB
ns
V/µs
f = 5MHz, Receiver:
R
f
= R
g
= 510Ω, A
V
= +2
V
O
= 2V
PP
, ±0.1%, 8pF Load,
V
S
= 5V
A
V
=
−1,
V
I
= 2V
PP
For LMH6642 and LMH6644
For LMH6643
Input Offset Voltage
mV
TC V
OS
I
B
I
OS
R
IN
(1)
(2)
(3)
(4)
(5)
Input Offset Average Drift
Input Bias Current
Input Offset Current
Common Mode Input Resistance
See
See
(4)
(5)
µV/°C
µA
nA
MΩ
All limits are guaranteed by testing or statistical analysis.
Typical values represent the most likely parametric norm.
Slew rate is the average of the rising and falling slew rates.
Offset voltage average drift determined by dividing the change in V
OS
at temperature extremes by the total temperature change.
Positive current corresponds to current flowing into the device.
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Copyright © 2001–2013, Texas Instruments Incorporated
Product Folder Links:
LMH6642 LMH6643 LMH6644
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SNOS966P – MAY 2001 – REVISED MARCH 2013
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3V Electrical Characteristics (continued)
Unless otherwise specified, all limits guaranteed for at T
J
= 25°C, V
+
= 3V, V
−
= 0V, V
CM
= V
O
= V
+
/2, V
ID
(input differential
voltage) as noted (where applicable) and R
L
= 2kΩ to V
+
/2.
Boldface
limits apply at the temperature extremes.
Symbol
C
IN
CMVR
Parameter
Common Mode Input
Capacitance
Input Common-Mode Voltage
Range
CMRR
≥
50dB
1.8
1.6
CMRR
A
VOL
Common Mode Rejection Ratio
Large Signal Voltage Gain
V
CM
Stepped from 0V to 1.5V
V
O
= 0.5V to 2.5V
R
L
= 2kΩ to V
+
/2
V
O
= 0.5V to 2.5V
R
L
= 150Ω to V
+
/2
V
O
Output Swing
High
Output Swing
Low
I
SC
Output Short Circuit Current
R
L
= 2kΩ to V
+
/2, V
ID
= 200mV
R
L
= 150Ω to V /2, V
ID
= 200mV
R
L
= 2kΩ to V
+
/2, V
ID
=
−200mV
R
L
= 150Ω to V /2, V
ID
=
−200mV
Sourcing to V
+
/2
V
ID
= 200mV
(6)
Sinking to V
+
/2
V
ID
=
−200mV
(6)
I
OUT
+PSRR
I
S
(6)
Output Current
Positive Power Supply Rejection
Ratio
Supply Current (per channel)
V
OUT
= 0.5V from either supply
V
+
= 3.0V to 3.5V, V
CM
= 1.5V
No Load
75
50
35
55
40
+
+
Conditions
Min
(1)
Typ
(2)
Max
(1)
Units
pF
2
−0.5
2.0
95
96
82
2.98
2.93
25
75
95
110
±65
85
2.70
4.00
4.50
75
150
−0.2
−0.1
V
72
80
75
74
70
2.90
2.80
dB
dB
V
mV
mA
mA
dB
mA
Short circuit test is a momentary test. See
Note 7
under 5V Electrical Characteristics.
5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at T
J
= 25°C, V
+
= 5V, V
−
= 0V, V
CM
= V
O
= V
+
/2, V
ID
(input differential
voltage) as noted (where applicable) and R
L
= 2kΩ to V
+
/2.
Boldface
limits apply at the temperature extremes.
Symbol
BW
BW
0.1dB
PBW
e
n
i
n
THD
DG
Parameter
−3dB
BW
0.1dB Gain Flatness
Full Power Bandwidth
Input-Referred Voltage Noise
Input-Referred Current Noise
Total Harmonic Distortion
Differential Gain
Conditions
A
V
= +1, V
OUT
= 200mV
PP
A
V
= +2,
−1,
V
OUT
= 200mV
PP
A
V
= +2, R
L
= 150Ω to V+/2,
R
f
= 402Ω, V
OUT
= 200mV
PP
A
V
= +1,
−1dB,
V
OUT
= 2V
PP
f = 100kHz
f = 1kHz
f = 100kHz
f = 1kHz
f = 5MHz, V
O
= 2V
PP
, A
V
= +2
NTSC, A
V
= +2
R
L
=150Ω to V
+
/2
R
L
= 1kΩ to V /2
DP
Differential Phase
NTSC, A
V
= +2
R
L
= 150Ω to V
+
/2
R
L
= 1kΩ to V /2
(1)
(2)
4
All limits are guaranteed by testing or statistical analysis.
Typical values represent the most likely parametric norm.
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Copyright © 2001–2013, Texas Instruments Incorporated
+
+
Min
(1)
Typ
(2)
Max
(1)
Units
90
120
46
15
22
17
48
0.90
3.3
−60
0.16
MHz
MHz
MHz
nV/√Hz
pA/√Hz
dBc
%
0.05
0.05
deg
0.01
Product Folder Links:
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SNOS966P – MAY 2001 – REVISED MARCH 2013
5V Electrical Characteristics (continued)
Unless otherwise specified, all limits guaranteed for at T
J
= 25°C, V
+
= 5V, V
−
= 0V, V
CM
= V
O
= V
+
/2, V
ID
(input differential
voltage) as noted (where applicable) and R
L
= 2kΩ to V
+
/2.
Boldface
limits apply at the temperature extremes.
Symbol
CT Rej.
T
S
SR
V
OS
Parameter
Cross-Talk Rejection
Settling Time
Slew Rate
(3)
Conditions
f = 5MHz, Receiver:
R
f
= R
g
= 510Ω, A
V
= +2
V
O
= 2V
PP
, ±0.1%, 8pF Load
A
V
=
−1,
V
I
= 2V
PP
For LMH6642 and LMH6644
For LMH6643
Min
(1)
Typ
(2)
Max
(1)
Units
dB
ns
V/µs
47
68
95
125
±1
±1
±5
−1.70
20
3
2
−2.60
−3.25
800
1000
±5
±7
±3.4
±7
Input Offset Voltage
mV
TC V
OS
I
B
I
OS
R
IN
C
IN
CMVR
Input Offset Average Drift
Input Bias Current
Input Offset Current
Common Mode Input Resistance
Common Mode Input
Capacitance
Input Common-Mode Voltage
Range
See
See
(4)
(5)
µV/°C
µA
nA
MΩ
pF
−0.2
−0.1
CMRR
≥
50dB
3.8
3.6
−0.5
4.0
95
98
82
4.98
4.90
25
100
55
40
70
55
79
115
140
±70
90
2.70
V
CMRR
A
VOL
Common Mode Rejection Ratio
Large Signal Voltage Gain
V
CM
Stepped from 0V to 3.5V
V
O
= 0.5V to 4.50V
R
L
= 2kΩ to V
+
/2
V
O
= 0.5V to 4.25V
R
L
= 150Ω to V
+
/2
72
86
82
76
72
4.90
4.65
dB
dB
V
O
Output Swing
High
Output Swing
Low
R
L
= 2kΩ to V
+
/2, V
ID
= 200mV
R
L
= 150Ω to V /2, V
ID
= 200mV
R
L
= 2kΩ to V
+
/2, V
ID
=
−200mV
R
L
= 150Ω to V /2, V
ID
=
−200mV
Sourcing to V
+
/2
V
ID
= 200mV
(6) (7)
Sinking to V
+
/2
V
ID
=
−200mV
(6) (7)
+
+
V
100
150
mV
I
SC
Output Short Circuit Current
mA
I
OUT
+PSRR
I
S
(3)
(4)
(5)
(6)
(7)
Output Current
Positive Power Supply Rejection
Ratio
Supply Current (per channel)
V
O
= 0.5V from either supply
V
+
= 4.0V to 6V
No Load
mA
dB
4.25
5.00
mA
Slew rate is the average of the rising and falling slew rates.
Offset voltage average drift determined by dividing the change in V
OS
at temperature extremes by the total temperature change.
Positive current corresponds to current flowing into the device.
Short circuit test is a momentary test. See
Note 7.
Output short circuit duration is infinite for V
S
< 6V at room temperature and below. For V
S
> 6V, allowable short circuit duration is 1.5ms.
Copyright © 2001–2013, Texas Instruments Incorporated
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