LN-162315-H4
1600 to 2300 MHz Low Noise Amplifier
Data Sheet
June, 2009
Features:
25 dB Gain
12 dBm P1dB
1.4:1 VSWR
1.5 dB Noise Figure
Single +5V Bias
Surface Mount HermeticPackage
Electrical Specifications
SYMBOL
Freq.
SSG
P1 dB
NF
VSWR
GOF
Idd
Temp
Vdd = 5.0 V, Zo = 50 ohms
Min
1600
22
+10
PARAMETER
Frequency Range
Small Signal Gain
Pout at 1 dB Comp Point
Noise Figure
VSWR (Input/Output)
Gain Variation over Frequency
DC Current
Operating Temperature
Typical
25
+12
1.5
1.4:1
0.3
38
Max
2300
27
2.0
2:1
0.8
45
+95
Unit
MHz
dB
dBm
dB
--
+/- dB
mA
°C
-40
Outline Diagram
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
EMAIL
info@mwtinc.com
Preliminary data contained herein is subject to change without notice. All rights reserved © August 2007
LN-162315-H4
1600 to 2300 MHz Low Noise Amplifier
Absolute Maximum Ratings
Maximum Bias Voltage
Maximum Continuous RF Input Power
Maximum Peak Input Power
Maximum Case Operating Temperature
Maximum Storage Temperature
8.0 V
+15 dBm
+20 dBm
+100°C
- 65 to + 150 °C
Typical Performance
Gain vs Tem p
30
+25C
Vdd = 5.0 V, Zo = 50 ohms
NF vs Tem p
3. 0
+25C
28
-40C
+95C
2. 5
+95C
2. 0
26
1. 5
24
1. 0
22
0. 5
20
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
0. 0
1. 6
1. 7
1. 8
1. 9
2. 0
2. 1
2. 2
2. 3
F r e q . ( GH z )
F r e q . ( GH z )
P1dB @ 25C
15
14
13
0
Return Loss @ 25C
S11
-5
P1dB (dBm)
12
11
10
9
8
7
6
5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
-20
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
S22
Ret. Loss
-10
-15
2.4
2.5
Freq. (GHz)
Freq. (GHz)
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
EMAIL
info@mwtinc.com
Preliminary data contained herein is subject to change without notice. All rights reserved © August 2007
