Visible Light Emitting Diodes (Red)
LN145W
GaAlAs Red Light Emitting Diode
Unit : mm
Not soldered 0.8 max.
Light source for optical fiber communications,
1.5±0.2
2.1±0.15
1.6±0.15
0.8±0.1
4.5±0.15
3.5±0.15
Features
Red light emission close to monochromatic light :
λ
P
= 700 nm
High-power output, high-efficiency
High coupling characteristics and suits to a plastic fiber
High-speed response : –3dB modulation of 10MHz
Side-view flat resin package
3.9±0.25
12.8 min.
(2.95)
2-1.2±0.3
2-0.45±0.15
1
2
2.54±0.2
0.45±0.2
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
120
40
400
3
–25 to +85
–30 to +100
Unit
mW
mA
mA
V
˚C
˚C
1: Cathode
2: Anode
t
w
= 10
µs,
Duty cycle = 10 %
Electro-Optical Characteristics
(Ta = 25˚C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Half-power angle
Response time
Cutoff frequency
*
Cutoff
Symbol
P
O
λ
P
∆λ
V
F
I
R
θ
t
r
, t
f
f
C*
Conditions
I
F
= 20mA
I
F
= 20mA
I
F
= 20mA
I
F
= 20mA
V
R
= 3V
The angle in which radiant intencity is 50%
min
2.5
typ
4
700
35
1.8
80
30
10
max
Unit
mW
nm
nm
2.2
100
V
µA
deg.
ns
MHz
I
FP
= 100mA
P
O
(at f = f
C
)
=–3
P
O
( at f = 1MHz)
frequency f
C
: Frequency at which 10
×
log
[Element moisture resistance]
It is difficult to guarantee that the LN145W will meet the moisture
resistance specifications (MIL-STD-202D) which are
commonly guaranteed for semiconductors.
1