Supertex inc.
P-Channel Enhancement-Mode
Lateral MOSFET
Features
►
►
►
►
►
►
►
Ultra-low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Freedom from secondary breakdown
Low input and output leakage
LP0701
General Description
These enhancement-mode (normally-off) transistors utilize a
lateral MOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices
with the power handling capabilities of bipolar transistors
and with the high input impedance and negative temperature
coefficient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free
from thermal runaway and thermally induced secondary
breakdown. The low threshold voltage and low on-resistance
characteristics are ideally suited for hand held, battery
operated applications.
Applications
►
►
►
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Logic level interfaces
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Ordering Information
Device
LP0701
Package Options
8-Lead SOIC (Narrow Body)
LP0701LG-G
TO-92
LP0701N3-G
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(Ω)
V
GS(TH)
(max)
(V)
I
D(ON)
(min)
(A)
-16.5
1.5
-1.0
-1.25
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
D
D
D
D
DRAIN
S
G
SOURCE
GATE
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±10V
-55°C to +150°C
+300°C
NC
NC
8-Lead SOIC (LG)
TO-92 (N3)
Product Marking
P0701
YYWW
LLLL
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
Package may or may not include the following marks: Si or
8-Lead SOIC (LG)
S i
LP
0 7 0 1
YYWW
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92 (N3)
Supertex inc.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
LP0701
Thermal Characteristics
Package
8-Lead SOIC
TO-92
(continuous
)
(mA)
I
D
†
(pulsed)
(A)
I
D
†
Power Dissipation
@T
C
= 25 C
(W)
O
(
O
C/W)
θ
jc
(
O
C/W)
θ
ja
(mA)
I
DR
I
DRM
†
(A)
-700
-500
-1.25
-1.25
1.5
‡
1.0
83
125
104
‡
170
-700
-500
-1.25
-1.25
Notes:
† I
D
(continuous) is limited by max rated T
j
.
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm
Electrical Characteristics
(T = 25°C unless otherwise specified)
A
Sym
Parameter
Min
Typ
Max
Units
Conditions
BV
DSS
V
GS
ΔV
GS(th)
I
GSS
I
DSS
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage
Zero gate voltage drain current
-16.5
-0.5
-
-
-
-
-
-0.6
-1.25
-
-
-
-
500
-
-
-
-
-
-
-
-
-
-0.7
-
-
-
-
-0.4
-1.0
-2.3
2.0
1.7
1.3
-
700
120
100
40
-
-
-
-
-1.2
-
-1.0
-4.0
-100
-100
-1.0
-
-
-
4.0
2.0
1.5
0.75
-
250
125
60
20
20
30
30
-1.5
V
V
mV/
O
C
nA
nA
mA
A
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= ±10V, V
DS
= 0V
V
DS
= -15V, V
GS
= 0V
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125
O
C
V
GS
= V
DS
= -2.0V
V
GS
= V
DS
= -3.0V
V
GS
= V
DS
= -5.0V
V
GS
= -2.0V, I
D
= -50mA
I
D(ON)
On-state drain current
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
Static drain-to-source on-state
resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Ω
%/
O
C
mmho
pF
V
GS
= -3.0V, I
D
= -150mA
V
GS
= -5.0V, I
D
= -300mA
V
GS
= -5.0V, I
D
= -300mA
V
GS
= -15V, I
D
= -1.0A
V
GS
= 0V,
V
DS
= -15V,
f = 1.0MHz
V
DD
= -15V,
I
D
= -1.25A,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= -500mA
ns
V
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
90%
t
(OFF)
t
r
t
d(OFF)
t
f
INPUT
-10V
Pulse
Generator
R
GEN
t
(ON)
t
d(ON)
0V
D.U.T.
INPUT
Output
R
L
OUTPUT
VDD
90%
10%
90%
10%
V
DD
Supertex inc.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
LP0701
Typical Performance Curves
-2.5
Output Characteristics
-2.5
Saturation Characteristics
V
GS
= -5.0V
-2.0
V
GS
= -5.0V
-2.0
-4V
I
D
(amperes)
-1.5
I
D
(amperes)
-1.5
-4V
-3V
-1.0
-3V
-1.0
-0.5
-2V
-1V
-0.5
-2V
-1V
0
-1
-2
0
0
-4
V
DS
(volts)
-8
-12
-16
0
V
DS
(volts)
-3
-4
-5
1.0
Transconductance vs. Drain Current
2
Power Dissipation vs. Case Temperature
V
DS
= -15V
0.8
T
A
= -55
O
C
SO-8
G
FS
(seimens)
P
D
(watts)
0.6
T
A
= 25
O
C
T
A
= 125
O
C
1
TO-92
0.4
0.2
0
0
I
D
(amperes)
Maximum Rated Safe Operating Area
-1.0
-2.0
0
0
25
50
75
100
125
150
T
C
(
O
C)
Thermal Response Characteristics
-10
1.0
Thermal Resistance (normalized)
TO-92/SO-8 (pulsed)
0.8
I
D
(amperes)
-1.0
0.6
TO-92 (DC)
-0.1
SO-8 (DC)
0.4
TO-92
T
C
= 25V
P
D
= 1.0W
0.2
-0.01
-0.1
T
C
= 25
O
C
-1.0
V
DS
(volts)
-10
-100
0
0.001
0.01
0.1
1.0
10
t
p
(seconds)
Supertex inc.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
3
LP0701
Typical Performance Curves (cont.)
BV
DSS
Variation with Temperature
1.1
10
On-Resistance vs. Drain Current
V
GS
= -2.0V
8
BV
DSS
(normalized)
V
GS
= -3.0V
V
GS
= -5.0V
R
DSS(ON)
(ohms)
6
1.0
4
2
0.9
-50
0
50
100
150
0
0
-1
T
J
( C)
O
I
D
(amperes)
-2
-3
-2
Transfer Characteristics
V
DS
= -15V
1.4
V
(th)
and R
DS
Variation with Temperature
1.6
1.2
V
(th)
@ -1.0mA
1.4
I
D
(amperes)
T
A
= 25
O
C
-1
1.0
1.2
T
A
= 125
O
C
0.8
1.0
0.6
R
DS(ON)
@ -5V, -300mA
0.8
0
0
-1
-2
-3
-4
-5
0.4
-50
0
50
100
0.6
150
V
GS (volts)
Capacitance vs. Drain-to-Source Voltage
T
J
(
O
C)
Gate Drive Dynamic Characteristics
200
-10
f = 1.0MHz
-8
V
DS
= -10V
-20V
238pF
C (picofarads)
100
C
OSS
V
GS
(volts)
C
ISS
-6
-4
C
RSS
0
-2
0
-5
-10
-15
0
C
ISS
= 115pF
0
1
V
DS
(volts)
Q
G
(nanocoulombs)
2
3
4
5
Supertex inc.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
4
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
T
A
= -55
O
C
LP0701
D
8
E
E1
Note 1
(Index Area
D/2 x E1/2)
L2
Gauge
Plane
θ1
1
L
L1
θ
Seating
Plane
Top View
A
Note 1
View B
View B
h
Seating
Plane
h
A A2
A1
e
b
Side View
A
View A-A
Note:
1. This chamfer feature is optional. A Pin 1 identifier must be located in the index area indicated. The Pin 1 identifier can be: a molded mark/identifier;
an embedded metal marker; or a printed indicator.
Symbol
A
A1
A2
b
D
E
E1
e
h
L
L1
L2
θ
θ1
Dimension
(mm)
MIN
NOM
MAX
1.35*
-
1.75
0.10
-
0.25
1.25
-
1.65*
0.31
-
0.51
4.80* 5.80* 3.80*
4.90
6.00
3.90
5.00* 6.20* 4.00*
1.27
BSC
0.25
-
0.50
0.40
-
1.27
1.04
REF
0.25
BSC
0
O
-
8
O
5
O
-
15
O
JEDEC Registration MS-012, Variation AA, Issue E, Sept. 2005.
* This dimension is not specified in the JEDEC drawing.
Drawings are not to scale.
Supertex Doc. #:
DSPD-8SOLGTG, Version I041309.
Supertex inc.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
5
