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LPC662AIMX

IC DUAL OP-AMP, 3300 uV OFFSET-MAX, 0.35 MHz BAND WIDTH, PDSO8, SO-8, Operational Amplifier

器件类别:模拟混合信号IC    放大器电路   

厂商名称:National Semiconductor(TI )

厂商官网:http://www.ti.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
National Semiconductor(TI )
零件包装代码
SOIC
包装说明
SO-8
针数
8
Reach Compliance Code
not_compliant
ECCN代码
EAR99
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)
0.004 µA
最小共模抑制比
68 dB
标称共模抑制比
83 dB
频率补偿
YES
最大输入失调电压
3300 µV
JESD-30 代码
R-PDSO-G8
JESD-609代码
e0
长度
4.9 mm
低-偏置
YES
低-失调
NO
微功率
YES
湿度敏感等级
1
负供电电压上限
标称负供电电压 (Vsup)
功能数量
2
端子数量
8
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
包装方法
TAPE AND REEL
峰值回流温度(摄氏度)
235
电源
5/15 V
认证状态
Not Qualified
座面最大高度
1.75 mm
最小摆率
0.05 V/us
标称压摆率
0.11 V/us
最大压摆率
0.14 mA
供电电压上限
16 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
标称均一增益带宽
350 kHz
最小电压增益
60000
宽度
3.9 mm
文档预览
LPC662 Low Power CMOS Dual Operational Amplifier
August 2000
LPC662
Low Power CMOS Dual Operational Amplifier
General Description
The LPC662 CMOS Dual operational amplifier is ideal for
operation from a single supply. It features a wide range of
operating voltage from +5V to +15V, rail-to-rail output swing
in addition to an input common-mode range that includes
ground. Performance limitations that have plagued CMOS
amplifiers in the past are not a problem with this design.
Input V
OS
, drift, and broadband noise as well as voltage gain
(into 100 kΩ and 5 kΩ) are all equal to or better than widely
accepted bipolar equivalents, while the power supply
requirement is typically less than 0.5 mW.
This chip is built with National’s advanced Double-Poly
Silicon-Gate CMOS process.
See the LPC660 datasheet for a Quad CMOS operational
amplifier and LPC661 for a single CMOS operational
amplifier with these same features.
n
n
n
n
n
Long-term integrator
High-impedance preamplifier
Active filter
Sample-and-Hold circuit
Peak detector
Features
n
n
n
n
n
n
n
n
n
n
n
n
Rail-to-rail output swing
Micropower operation (
<
0.5 mW)
Specified for 100 kΩ and 5 kΩ loads
High voltage gain
120 dB
Low input offset voltage
3 mV
Low offset voltage drift
1.3 µV/˚C
Ultra low input bias current
2 fA
Input common-mode includes GND
Operating range from +5V to +15V
Low distortion
0.01% at 1 kHz
Slew rate
0.11 V/µs
Full military temperature range available
Applications
n
High-impedance buffer
n
Precision current-to-voltage converter
Application Circuit
Howland Current Pump
DS010548-23
© 2001 National Semiconductor Corporation
DS010548
www.national.com
LPC662
Absolute Maximum Ratings
(Note 3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Differential Input Voltage
Supply Voltage (V
+
− V
)
Output Short Circuit to V
+
Output Short Circuit to V
Lead Temperature
(Soldering, 10 sec.)
Storage Temp. Range
Junction Temperature
ESD Rating
(C = 100 pF, R = 1.5 kΩ)
Power Dissipation
Current at Input Pin
Current at Output Pin
Current at Power Supply Pin
Voltage at Input/Output Pin
35 mA
(V ) + 0.3V, (V ) −0.3V
+
Operating Ratings
(Note 3)
Temperature Range
LPC662AMJ/883
LPC662AM
LPC662AI
LPC662I
Supply Range
Power Dissipation
Thermal Resistance (θ
JA
) (Note 10)
8-Pin Ceramic DIP
8-Pin Molded DIP
8-Pin SO
8-Pin Side Brazed Ceramic DIP
−55˚C
T
J
+125˚C
−55˚C
T
J
+125˚C
−40˚C
T
J
+85˚C
−40˚C
T
J
+85˚C
4.75V to 15.5V
(Note 9)
100˚C/W
101˚C/W
165˚C/W
100˚C/W
±
Supply Voltage
16V
(Note 11)
(Note 1)
260˚C
−65˚C to +150˚C
150˚C
1000V
(Note 2)
±
5 mA
±
18 mA
DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C.
Boldface
limits apply at the temperature extremes. V
+
= 5V, V
= 0V, V
CM
= 1.5V, V
O
= 2.5V and R
L
>
1M unless otherwise specified.
LPC662AM
Parameter
Conditions
Typ
LPC662AMJ/883
Limit
(Notes 4, 8)
Input Offset Voltage
Input Offset Voltage
Average Drift
Input Bias Current
Input Offset Current
Input Resistance
Common Mode
Rejection Ratio
Positive Power Supply
Rejection Ratio
Negative Power Supply
Rejection Ratio
Input Common-Mode
Voltage Range
V
+
= 5V and 15V
For CMRR
50 dB
V − 1.9
Large Signal
Voltage Gain
R
L
= 100 kΩ (Note 5)
Sourcing
Sinking
R
L
= 5 kΩ (Note 5)
Sourcing
Sinking
250
500
1000
1000
+
+
LPC662AI
Limit
(Note 4)
3
3.3
LPC662I
Limit
(Note 4)
6
6.3
mV
max
µV/˚C
Units
1
1.3
0.002
0.001
3
3.5
20
100
20
100
2
70
68
70
68
84
83
−0.1
0
V − 2.3
V
+
− 2.5
400
300
180
120
200
160
100
60
+
+
pA
4
4
2
63
61
63
61
74
73
−0.1
0
V − 2.3
V
+
− 2.5
300
200
90
70
100
80
50
40
max
pA
max
Tera
dB
min
dB
min
dB
min
V
max
V
min
V/mV
min
V/mV
min
V/mV
min
V/mV
min
>
1
0V
V
CM
12.0V
V = 15V
5V
V
+
15V
V
O
= 2.5V
0V
V
−10V
94
−0.4
83
+
83
70
68
70
68
84
82
−0.1
0
V − 2.3
V
+
− 2.6
400
250
180
70
200
150
100
35
www.national.com
2
LPC662
DC Electrical Characteristics
(Continued)
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C.
Boldface
limits apply at the temperature extremes. V
+
= 5V, V
= 0V, V
CM
= 1.5V, V
O
= 2.5V and R
L
>
1M unless otherwise specified.
LPC662AM
Parameter
Conditions
Typ
LPC662AMJ/883
Limit
(Notes 4, 8)
Output Swing
V = 5V
R
L
= 100 kΩ to V /2
0.004
V
+
= 5V
R
L
= 5 kΩ to V /2
0.040
V = 15V
R
L
= 100 kΩ to V
+
/2
0.007
V = 15V
R
L
= 5 kΩ to V
+
/2
0.110
Output Current
V = 5V
Sinking, V
O
= 5V
Output Current
V = 15V
Sinking, V
O
= 13V
(Note 11)
Supply Current
Both Amplifiers
V
O
= 1.5V
86
39
+
+
+
+
+
+
+
LPC662AI
Limit
(Note 4)
4.970
4.950
0.030
0.050
4.850
4.750
0.150
0.250
14.920
14.880
0.030
0.050
14.680
14.600
0.220
0.300
16
14
16
14
28
25
28
24
120
140
LPC662I
Limit
(Note 4)
4.940
4.910
0.060
0.090
4.750
4.650
0.250
0.350
14.880
14.820
0.060
0.090
14.580
14.480
0.320
0.400
13
11
13
11
23
20
23
19
140
160
V
min
V
max
V
min
V
max
V
min
V
max
V
min
V
max
mA
min
mA
min
mA
min
mA
min
µA
max
Units
4.987
4.970
4.950
0.030
0.050
4.850
4.750
0.150
0.250
14.920
14.880
0.030
0.050
14.680
14.600
0.220
0.300
16
12
16
12
19
19
19
19
120
145
4.940
14.970
14.840
Sourcing, V
O
= 0V
22
21
40
Sourcing, V
O
= 0V
3
www.national.com
LPC662
AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C.
Boldface
limits apply at the temperature extremes. V
+
= 5V, V
= 0V, V
CM
= 1.5V, V
O
= 2.5V and R
L
>
1M unless otherwise specified.
LPC662AM
Parameter
Conditions
Typ
LPC662AMJ/883
Limit
(Notes 4, 8)
Slew Rate
Gain-Bandwidth Product
Phase Margin
Gain Margin
Amp-to-Amp Isolation
Input Referred Voltage Noise
Input Referred Current Noise
Total Harmonic Distortion
(Note 7)
F = 1 kHz
F = 1 kHz
F = 1 kHz, A
V
= −10, V
+
= 15V
R
L
= 100 kΩ, V
O
= 8 V
PP
Note 1:
Applies to both single supply and split supply operation. Continuous short circuit operation at elevated ambient temperature and/or multiple Op Amp shorts
can result in exceeding the maximum allowed junction temperature of 150˚C. Output currents in excess of
±
30 mA over long term may adversely affect reliability.
Note 2:
The maximum power dissipation is a function of T
J(max)
,
θ
JA
, and T
A
. The maximum allowable power dissipation of any ambient temperature is P
D
= (T
J(max)
− T
A
)/θ
JA
.
Note 3:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed.
Note 4:
Limits are guaranteed by testing or correlation.
Note 5:
V
+
= 15V, V
CM
= 7.5V and R
L
connected to 7.5V. For Sourcing tests, 7.5V
V
O
11.5V. For Sinking tests, 2.5V
V
O
7.5V.
Note 6:
V
+
= 15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates.
Note 7:
Input referred. V
+
= 15V and R
L
= 100 kΩ connected to V
+
/2. Each amp excited in turn with 1 kHz to produce V
O
= 13 V
PP
.
Note 8:
A military RETS electrical test specification is available on request. At the time of printing, the LPC662AMJ/883 RETS specification complied fully with the
boldface
limits in this column. The LPC662AMJ/883 may also be procured to a Standard Military Drawing specification.
Note 9:
For operating at elevated temperatures the device must be derated based on the thermal resistance
θ
JA
with P
D
= (T
J
− T
A
)/θ
JA
.
Note 10:
All numbers apply for packages soldered directly into a PC board.
Note 11:
Do not connect output to V
+
when V
+
is greater than 13V or reliability may be adversely affected.
LPC662AI
Limit
(Note 4)
0.07
0.05
LPC662I
Limit
(Note 4)
0.05
0.03
V/µs
min
MHz
Deg
dB
dB
Units
(Note 6)
0.11
0.35
50
17
130
42
0.0002
0.01
0.07
0.04
%
www.national.com
4
LPC662
Typical Performance Characteristics
Supply Current vs
Supply Voltage
V
S
=
±
7.5V, T
A
= 25˚C unless otherwise specified
Input Bias Current
vs Temperature
DS010548-28
DS010548-29
Input Common-Mode
Voltage Range vs
Temperature
Output Characteristics
Current Sinking
DS010548-30
DS010548-31
Output Characteristics
Current Sourcing
Input Voltage Noise
vs Frequency
DS010548-32
DS010548-33
5
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参数对比
与LPC662AIMX相近的元器件有:LPC662AIM/NOPB、LPC662AIMX/NOPB、LPC662IM/NOPB、LPC662IMX/NOPB、LPC662IMX。描述及对比如下:
型号 LPC662AIMX LPC662AIM/NOPB LPC662AIMX/NOPB LPC662IM/NOPB LPC662IMX/NOPB LPC662IMX
描述 IC DUAL OP-AMP, 3300 uV OFFSET-MAX, 0.35 MHz BAND WIDTH, PDSO8, SO-8, Operational Amplifier IC DUAL OP-AMP, 3000 uV OFFSET-MAX, 0.35 MHz BAND WIDTH, PDSO8, SO-8, Operational Amplifier IC DUAL OP-AMP, 3000 uV OFFSET-MAX, 0.35 MHz BAND WIDTH, PDSO8, PLASTIC, SOP-8, Operational Amplifier IC DUAL OP-AMP, 6000 uV OFFSET-MAX, 0.35 MHz BAND WIDTH, PDSO8, ROHS COMPLIANT, SOP-8, Operational Amplifier IC DUAL OP-AMP, 6000 uV OFFSET-MAX, 0.35 MHz BAND WIDTH, PDSO8, ROHS COMPLIANT, SOIC-8, Operational Amplifier IC DUAL OP-AMP, 6300 uV OFFSET-MAX, 0.35 MHz BAND WIDTH, PDSO8, SO-8, Operational Amplifier
是否Rohs认证 不符合 符合 符合 符合 符合 不符合
厂商名称 National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI )
零件包装代码 SOIC SOIC SOIC SOIC SOIC SOIC
包装说明 SO-8 SOP, SOP8,.25 SOP, SOP8,.25 SOP, SOP8,.25 SOP, SOP8,.25 SO-8
针数 8 8 8 8 8 8
Reach Compliance Code not_compliant compliant compliant compliant compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
架构 VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB) 0.004 µA 0.000004 µA 0.000004 µA 0.000004 µA 0.000004 µA 0.004 µA
最小共模抑制比 68 dB 68 dB 68 dB 63 dB 63 dB 63 dB
标称共模抑制比 83 dB 83 dB 83 dB 83 dB 83 dB 83 dB
频率补偿 YES YES YES YES YES YES
最大输入失调电压 3300 µV 3000 µV 3000 µV 6000 µV 6000 µV 6300 µV
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
JESD-609代码 e0 e3 e3 e3 e3 e0
长度 4.9 mm 4.9 mm 4.9 mm 4.9 mm 4.9 mm 4.9 mm
低-偏置 YES YES YES YES YES YES
低-失调 NO NO NO NO NO NO
微功率 YES YES YES YES YES YES
湿度敏感等级 1 1 1 1 1 1
功能数量 2 2 2 2 2 2
端子数量 8 8 8 8 8 8
最高工作温度 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP SOP SOP SOP SOP
封装等效代码 SOP8,.25 SOP8,.25 SOP8,.25 SOP8,.25 SOP8,.25 SOP8,.25
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
包装方法 TAPE AND REEL RAIL TAPE AND REEL RAIL TAPE AND REEL TAPE AND REEL
峰值回流温度(摄氏度) 235 260 260 260 260 235
电源 5/15 V 5/15 V 5/15 V 5/15 V 5/15 V 5/15 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.75 mm 1.75 mm 1.75 mm 1.75 mm 1.75 mm 1.75 mm
最小摆率 0.05 V/us 0.05 V/us 0.05 V/us 0.05 V/us 0.05 V/us 0.05 V/us
标称压摆率 0.11 V/us 0.11 V/us 0.11 V/us 0.11 V/us 0.11 V/us 0.11 V/us
最大压摆率 0.14 mA 0.14 mA 0.14 mA 0.16 mA 0.16 mA 0.16 mA
供电电压上限 16 V 16 V 16 V 16 V 16 V 16 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子面层 Tin/Lead (Sn/Pb) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Tin/Lead (Sn/Pb)
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 30 40 40 40 40 30
标称均一增益带宽 350 kHz 350 kHz 350 kHz 350 kHz 350 kHz 350 kHz
最小电压增益 60000 60000 60000 50000 50000 50000
宽度 3.9 mm 3.9 mm 3.9 mm 3.9 mm 3.9 mm 3.9 mm
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