LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
Applications
Low current rectification
Features
Extremelysmall surface mounting type. (SOD882)
Low
V
F
High reliability.
We declare that the material of product
compliance with RoHS requirements.
LRB751BS-40T5G
S-LRB751BS-40T5G
1
2
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable.
SOD882
Construction
Silicon epitaxial planar
DEVICE MARKING AND ORDERING INFORMATION
Device
LRB751BS-40T1G
S-LRB751BS-40T1G
LRB751BS-40T3G
S-LRB751BS-40T3G
LRB751BS-40T5G
S-LRB751BS-40T5G
Marking
5
5
5
Shipping
5000/Tape&Reel
8000/Tape&Reel
10000/Tape&Reel
1
Cathode
2
Anode
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak
（60Hz・1cyc）
Junction temperature
Storage temperature
Electrical characteristic
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol
V
F
I
R
Ct
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
40
30
30
200
125
-40 to +125
Unit
V
V
mA
mA
℃
℃
Min.
-
-
-
Typ.
Max.
0.37
0.5
-
Unit
V
µA
pF
Conditions
I
F
=1mA
V
R
=30V
V
R
=1V , f=1MHz
2
Rev.A 1/3
LESHAN RADIO COMPANY, LTD.
LRB751BS-40T5G , S-LRB751BS-40T5G
Electrical characteristic curves
100
100000
Ta=125℃
FORWARD CURRENT:IF(mA)
10
0REVERSE CURRENT:IR(nA)
Ta=75℃
Ta=125℃
10000
Ta=75℃
1
0.1
Ta=25℃
Ta=-25℃
1000
Ta=25℃
100
Ta=-25℃
0.01
0.001
0
100 200 300 400 500 600 700 800
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
10
1
0
5
10 15 20 25 30 35
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
40
10
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
1
0.1
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Rev.A 2/3
LESHAN RADIO COMPANY, LTD.
LRB751BS-40T5G , S-LRB751BS-40T5G
SOD882
DIMENSION OUTLINE:
Unit:mm
Rev.A 3/3
