LS301 LS302 LS303
HIGH VOLTAGE
SUPER-BETA MONOLITHIC DUAL
NPN TRANSISTORS
FEATURES
VERY HIGH GAIN
LOW OUTPUT CAPACITANCE
TIGHT V
BE
MATCHING
HIGH f
T
@ 25 °C (unless otherwise stated)
I
C
Collector Current
5mA
h
FE
2000 @ 1.0µA TYP.
C
OBO
2.0pF
IV
BE1
-V
BE2
I=0.2mV TYP.
100 MHz
ABSOLUTE MAXIMUM RATINGS NOTE 1
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
-55 to +150 °C
-55 to +150 °C
ONE SIDE
250mW
2.3mW/°C
BOTH SIDES
500mW
4.3mW/°C
TO-71 & TO-78
TOP VIEW
SOIC
TOP VIEW
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
BV
CCO
h
FE
h
FE
h
FE
V
CE
(SAT)
I
CBO
I
EBO
C
OBO
C
C1C2
I
C1C2
f
T
NF
CHARACTERISTIC
Collector to Base Voltage
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector To Collector Voltage
DC Current Gain
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
Output Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
LS301 LS302 LS303
18
18
6.0
80
2000
2000
2000
0.5
100
0.2
2
2
1.0
100
3
35
35
6.0
80
1000
1000
1000
0.5
100
0.2
2
2
1.0
100
3
10
10
6.0
20
2000
2000
2000
0.5
100
0.2
2
2
1.0
100
3
MIN.
MIN.
MIN.
MIN.
TYP.
MIN.
TYP.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
V
pA
pA
pF
pF
µA
MHz
dB
UNITS
V
V
V
V
CONDITIONS
I
C
= 10µA
I
C
= 1mA
I
E
= 10µA
I
C
= 1µA
I
C
= 1µA
I
C
= 10µA
I
C
= 500µA
I
C
= 1mA
I
E
= 0
I
E
= 0
I
E
= 0
V
CC
= 0
V
CC
= NOTE 4, I
E
= I
B
= 0
I
C
= 200µA
I
C
= 10µA
BW = 200Hz
f = 1KHz
V
CE
= 5V
V
CE
= 3V
R
G
= 10K
I
E
= 0
I
B
= 0
I
C
= 0
NOTE 2
I
E
= I
B
= 0
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
I
B
= 0.1mA
V
CB
= NOTE 3
V
EB
= 3V
V
CB
= 1V
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201116 05/15/2014 Rev#A4 ECN# LS301 LS302 LS303
MATCHING CHARACTERISTICS
SYMBOL
IV
BE1
-V
BE2
I
I(V
BE1
-V
BE2)
I/°C
II
B1
- I
B2
I
h
FE1
/h
FE2
CHARACTERISTIC
Base Emitter Voltage Differential
Base Emitter Voltage Differential
Change with Temperature
Base Current Differential
DC Current Gain Differential
LS301 LS302 LS303
0.2
1
1
5
0.5
1
5
0.2
1
1
5
1
5
5
0.2
1
1
5
0.5
1.5
5
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
TYP.
UNITS
mV
mV
µV/°C
µV/°C
nA
nA
%
I
C
= 10µA
T = 55°C to
I
C
= 10µA
I
C
= 10µA
I
C
= 10µA
V
CE
= 5V
+125°C
V
CE
= 1V
V
CE
= 5V
V
CE
= 5V
CONDITIONS
I
C
= 10µA
V
CE
= 5V
0.210
0.210
0.170
0.170
4
8
8
4
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired
2. The reverse base-to-emitter voltage must never exceed 6.0 volts; the reverse base-to-emitter current must never exceed 10 µAmps.
3. For LS301 & LS302: V
CB
=10V; for LS303: V
CB
=5V
4. For LS301 & LS302: V
CC
=±80V; for LS303: V
CC
=±20V
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use;
nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality
discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil
and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the
director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro
Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201116 05/15/2014 Rev#A4 ECN# LS301 LS302 LS303
