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LS845

MONOLITHIC DUAL

N-CHANNEL JFET

Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET

The LS845 is a high-performance monolithic dual

JFET featuring extremely low noise, tight offset voltage

and low drift over temperature specifications, and is

targeted for use in a wide range of precision

instrumentation applications. The LS845 features a 15-

mV offset and 25-µV/°C drift.

The 6 Pin SOT-23 package provides ease of

manufacturing, and a lower cost assembly option.

(See Packaging Information).

FEATURES

LOW DRIFT

| V

GS1‐2

/ T| ≤25µV/°C

LOW LEAKAGE

= 15pA TYP.

LOW NOISE

= 3nV/√Hz TYP.

LOW OFFSET VOLTAGE

| V

GS1‐2

| ≤15mV

ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature

‐65°C to +150°C

Operating Junction Temperature

+150°C

Maximum Voltage and Current for Each Transistor – Note 1

‐V

GSS

Gate Voltage to Drain or Source

60V

‐V

DSO

Drain to Source Voltage

60V

‐I

G(f)

Gate Forward Current

50mA

Maximum Power Dissipation

Device Dissipation @ Free Air – Total 400mW @ +125°C

MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED

SYMBOL

CHARACTERISTICS VALUE UNITS CONDITIONS

| V

GS1‐2

/ T| max.

DRIFT VS.

µV/°C V

=10V, I

=500µA

TEMPERATURE

=‐55°C to +125°C

| V

GS1‐2

| max.

OFFSET VOLTAGE

=10V, I

500µA

MAX.

‐‐

3.5

100

0.2

‐‐

0.5

‐‐

UNITS

µmho

CONDITIONS

= 0 I

=1nA

= 1nA I

= 0 I

= 0

= 15V V

= 0V f = 1kHz

= 15V I

= 500µA

= 15V V

= 0V

= 15V I

= 1nA

=15V I

=500µA

= 15V I

= 500µA

= +125°C

= 3V I

= 500µA

= 15V , V

= 15V V

= 0V

= 15V I

= 500µA

LS845 Applications:

Wideband Differential Amps

High-Speed,Temp-Compensated Single-

Ended Input Amps

High-Speed Comparators

Impedance Converters and vibrations

detectors.

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTICS

MIN.

TYP.

GSS

Breakdown Voltage

‐‐

GGO

Gate‐To‐Gate Breakdown

‐‐

TRANSCONDUCTANCE

fSS

Full Conduction

1500

‐‐

Typical Operation

1000

1500

FS1‐2

/ Y

Mismatch

‐‐

0.6

DRAIN CURRENT

DSS

Full Conduction

1.5

DSS1‐2

/ I

DSS

Mismatch at Full Conduction

‐‐

GATE VOLTAGE

(off) or V

Pinchoff voltage

‐‐

(on)

Operating Range

0.5

‐‐

GATE CURRENT

‐I

max.

Operating

‐‐

‐I

max.

High Temperature

‐‐

‐I

max.

Reduced V

‐‐

‐I

GSS

max.

At Full Conduction

‐‐

OUTPUT CONDUCTANCE

OSS

Full Conduction

‐‐

Operating

‐‐

0.2

OS1‐2

Differential

‐‐

0.02

COMMON MODE REJECTION

CMR

‐20 log | V

GS1‐2

/ V

110

‐20 log | V

GS1‐2

/ V

‐‐

NOISE

Figure

‐‐

Voltage

‐‐

CAPACITANCE

ISS

Input

‐‐

RSS

Reverse Transfer

‐‐

Drain‐to‐Drain

‐‐

0.5

Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired

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nV/√Hz

∆V

= 10 to 20V I

=500µA

∆V

= 5 to 10V I

=500µA

= 15V V

= 0V R

= 10MΩ

f= 100Hz NBW= 6Hz

=15V I

=500µA f=1KHz NBW=1Hz

=15V I

=500µA f=10Hz NBW=1Hz

= 15V, I

=500µA

= 15V, I

=500µA

Available Packages:

LS845 / LS845 in SOT-23

LS845 / LS845 available as bare die

Please contact

Micross

for full package and die dimensions

Tel: +44 1603 788967

Email:

chipcomponents@micross.com

Web:

http://www.micross.com/distribution

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.