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LTC1150CJ8

OP-AMP, 10 uV OFFSET-MAX, 2.5 MHz BAND WIDTH, PDIP8
运算放大器, 10 uV 最大补偿, 2.5 MHz 波段 宽度, PDIP8

器件类别:模拟混合信号IC    放大器电路   

厂商名称:Linear ( ADI )

厂商官网:http://www.analog.com/cn/index.html

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器件参数
参数名称
属性值
是否Rohs认证
不符合
零件包装代码
DIP
包装说明
DIP, DIP8,.3
针数
8
Reach Compliance Code
unknow
ECCN代码
EAR99
放大器类型
OPERATIONAL AMPLIFIER
架构
CHOPPER-STAB
最大平均偏置电流 (IIB)
0.001 µA
25C 时的最大偏置电流 (IIB)
0.00005 µA
最小共模抑制比
110 dB
标称共模抑制比
130 dB
频率补偿
YES
最大输入失调电压
10 µV
JESD-30 代码
R-GDIP-T8
JESD-609代码
e0
低-偏置
YES
低-失调
YES
负供电电压上限
-16 V
标称负供电电压 (Vsup)
-15 V
功能数量
1
端子数量
8
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
CERAMIC, GLASS-SEALED
封装代码
DIP
封装等效代码
DIP8,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
5/+-15 V
可编程功率
YES
认证状态
Not Qualified
座面最大高度
5.08 mm
标称压摆率
3 V/us
最大压摆率
1.8 mA
供电电压上限
16 V
标称供电电压 (Vsup)
15 V
表面贴装
NO
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
标称均一增益带宽
2500 kHz
最小电压增益
10000000
宽度
7.62 mm
Base Number Matches
1
文档预览
LTC1150
±15V
Zero-Drift
Operational Amplifier with
Internal Capacitors
DESCRIPTIO
The LTC
®
1150 is a high-voltage, high-performance
zero-drift operational amplifier. The two sample-and-hold
capacitors usually required externally by other chopper
amplifiers are integrated on-chip. Further, LTC’s propri-
etary high-voltage CMOS structures allow the LTC1150 to
operate at up to 32V total supply voltage.
The LTC1150 has an offset voltage of 0.5µV, drift of
0.01µV/°C, 0.1Hz to 10Hz input noise voltage of 1.8µV
P-P
and a typical voltage gain of 180dB. The slew rate of 3V/µs
and a gain bandwidth product of 2.5MHz are achieved with
0.8mA of supply current. Overload recovery times from
positive and negative saturation conditions are 3ms and
20ms, respectively.
For applications demanding low power consumption,
Pin 1 can be used to program the supply current. Pin 5 is
an optional AC-coupled clock input, useful for
synchronization.
The LTC1150 is available in standard 8-lead, plastic dual-
in-line package, as well as an 8-lead SO package. The
LTC1150 can be a plug-in replacement for most standard
bipolar op amps with significant improvement in DC
performance.
, LTC and LT are registered trademarks of Linear Technology Corporation.
FEATURES
High Voltage Operation:
±16V
No External Components Required
Maximum Offset Voltage: 10µV
Maximum Offset Voltage Drift: 0.05µV/°C
Low Noise 1.8µV
P-P
(0.1Hz to 10Hz)
Minimum Voltage Gain: 135dB
Minimum PSRR: 120dB
Minimum CMRR: 110dB
Low Supply Current: 0.8mA
Single Supply Operation: 4.75V to 32V
Input Common Mode Range Includes Ground
200µA Supply Current with Pin 1 Grounded
Typical Overload Recovery Time 20ms
APPLICATIO S
Strain Gauge Amplifiers
Electronic Scales
Medical Instrumentation
Thermocouple Amplifiers
High Resolution Data Acquisition
TYPICAL APPLICATIO
1k
Single Supply Instrumentation Amplifier
160
1M
V
+
1M
V
+
2
7
6
1k
2
VOLTAGE NOISE DENSITY (nV√Hz)
140
120
100
80
60
40
20
0
10
100
1k
10k
FREQUENCY (Hz)
100k
LTC1150 •TA02
+
LTC1150
–V
IN
3
4
+
7
6
V
OUT
LTC1150
V
IN
3
4
GAIN = 1000V/V
OUTPUT OFFSET
5mV
TOTAL SUPPLY CURRENT
DECREASES TO 400µA
WHEN BOTH PIN 1s ARE
GROUNDED
LTC1150 •TA01
U
U
U
Noise Spectrum
1150fb
1
LTC1150
ABSOLUTE
AXI U
RATI GS
Total Supply Voltage (V
+
to V
) ............................... 32V
Input Voltage (Note 2) .............. (V
+
0.3V) to (V
–0.3V)
Output Short Circuit Duration .......................... Indefinite
Burn-In Voltage ....................................................... 32V
PACKAGE/ORDER I FOR ATIO
TOP VIEW
I
SUPPLY
1
–IN 2
+IN 3
V
4
8 CLOCK OUT
7 V
+
6 OUT
EXT CLOCK
5
IN
ORDER PART
NUMBER
LTC1150CN8
I
SUPPLY
1
–IN 2
+IN 3
V
4
N8 PACKAGE
8-LEAD PDIP
T
JMAX
= 110°C,
θ
JA
= 130°C/W
J8 PACKAGE
8-LEAD CERDIP
OBSOLETE PACKAGE
Consider the N8 or S8 Package as an Alternate Source
LTC1150MJ8
LTC1150CJ8
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
PARAMETER
Input Offset Voltage
Average Input Offset Drift
Long Term Offset Voltage Drift
Input Offset Current
CONDITIONS
(Note 3)
(Note 3)
The
denotes the specifications which apply over the full operating
temperature range otherwise specifications are at T
A
= 25°C. V
S
=
±15V,
Pin 1 = Open, unless otherwise noted.
LTC1150M
MIN
TYP
MAX
±0.5
Input Bias Current
Input Noise Voltage
Input Noise Current
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Large-Signal Voltage Gain
Maximum Output Voltage Swing
R
S
= 100Ω, 0.1Hz to 10Hz, TC2
R
S
= 100Ω, 0.1Hz to 1Hz, TC2
f = 10Hz (Note 4)
V
CM
= V
to 12V
V
S
=
±2.375V
to
±16V
R
L
= 10kΩ, V
OUT
=
±10V
R
L
= 10kΩ
R
L
= 10kΩ
R
L
= 100kΩ
2
U
U
W
W W
U
W
(Note 1)
Operating Temperature Range
LTC1150M
(OBSOLETE).....................–55°C
to 125°C
LTC1150C .......................................... – 40°C to 85°C
Storage Temperature Range ................. – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
TOP VIEW
8
CLOCK OUT
V
+
OUT
EXT CLOCK
IN
ORDER PART
NUMBER
LTC1150CS8
7
6
5
+
S8 PACKAGE
8-LEAD PLASTIC SO
T
JMAX
= 110°C,
θ
JA
= 200°C/W
S8 PART
MARKING
1150
LTC1150C
MIN
TYP
MAX
±0.5
±0.01
50
±20
±10
1.8
0.6
1.8
110
120
135
±13.5
10.5/
–13.5
130
145
180
±14.5
±10
±0.05
±200
±0.5
±100
±1.0
UNITS
µV
µV/°C
nV/√mo
pA
nA
pA
nA
µV
P-P
fA/√Hz
dB
dB
dB
V
±10
±0.05
±60
±1.5
±50
±2.5
±0.01
50
±20
±10
1.8
0.6
1.8
110
120
135
±13.5
10.5/
–13.5
±14.95
130
145
180
±14.5
±14.95
1150fb
LTC1150
ELECTRICAL CHARACTERISTICS
PARAMETER
Slew Rate
Gain Bandwidth Product
Supply Current
No Load
No Load, Pin 1 = V
No Load
CONDITIONS
R
L
= 10kΩ, C
L
= 50pF
The
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
S
=
±15V,
Pin 1 = Open, unless otherwise noted.
LTC1150M
MIN
TYP
MAX
3
2.5
0.8
0.2
LTC1150C
MIN
TYP
MAX
3
2.5
UNITS
V/µs
MHz
1.5
2
0.8
0.2
550
1.5
2
mA
Internal Sampling Frequency
550
Hz
The
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at T
A
= 25°C.
V
S
= 5V, Pin 1 = Open, unless otherwise noted.
PARAMETER
Input Offset Voltage
Average Input Offset Drift
Long Term Offset Voltage Drift
Input Offset Current
Input Bias Current
Input Noise Voltage
Input Noise Current
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Large-Signal Voltage Gain
R
S
= 100Ω, 0.1Hz to 10Hz, TC2
R
S
= 100Ω, 0.1Hz to 1Hz, TC2
f = 10Hz (Note 4)
V
CM
= 0V to 2.7V
V
S
=
±2.375V
to
±16V
R
L
= 10kΩ, V
OUT
= 0.3V to 4.5V
CONDITIONS
(Note 3)
(Note 3)
LTC1150M
MIN
TYP
MAX
±0.5
50
±10
±5
2.0
0.7
1.3
106
120
115
130
145
180
0.15 to 4.85
0.02 to 4.97
1.5
1.8
0.4
LTC1150C
MIN
TYP
MAX
±0.05
±0.01
50
±10
±5
2.0
0.7
1.3
106
120
115
130
145
180
0.15 to 4.85
0.02 to 4.97
1.5
1.8
±10
±0.05
±60
±30
UNITS
µV
µV/°C
µV/√mo
pA
pA
µV
P-P
fA/√Hz
dB
dB
dB
V
V/µs
MHz
±10
±0.01 ±0.05
±60
±30
Maximum Output Voltage Swing R
L
= 10kΩ
R
L
= 100kΩ
Slew Rate
Gain Bandwidth Product
Supply Current
Internal Sampling Frequency
Note 1:
Absolute Maximum Ratings are those values beyond which life of
the device may be impaired.
Note 2:
Connecting any terminal to voltages greater than V
+
or less than
V
may cause destructive latch-up. It is recommended that no sources
operating from external supplies be applied prior to power-up of the
LTC1150.
No Load
R
L
= 10kΩ, C
L
= 50pF
1
1.5
0.4
300
1
1.5
mA
Hz
300
Note 3:
These parameters are guaranteed by design. Thermocouple effects
preclude measurement of these voltage levels in high-speed automatic test
systems. V
OS
is measured to a limit determined by test equipment
capability.
Note 4:
Current Noise is calculated from the formula:
I
N
=
√(2q
• I
b
)
where q = 1.6 • 10
–19
Coulomb.
1150fb
3
LTC1150
TEST CIRCUITS
Offset Voltage Test Circuit
1M
V
+
7
6
OUTPUT
R
L
10Ω
100k
0.1µF
DC-10Hz Noise Test Circuit
475k
1k
2
+
LTC1150
3
4
V
LTC1150
158k
316k
475k
LT1012
0.1µF
0.1µF
+
+
TO X-Y
RECORDER
LTC1150 •TC01
FOR 1Hz NOISE BW, INCREASE ALL THE CAPACITORS BY A FACTOR OF 10
LTC1150 •TC02
TYPICAL PERFOR A CE CHARACTERISTICS
Supply Current vs Supply Voltage
1000
900
SUPPLY CURRENT (µA)
T
A
= 25°C
800
700
600
500
400
300
200
4
8
12 16 20 24 28 32 36
TOTAL SUPPLY VOLTAGE, V
+
TO V
(V)
LTC1150 • TPC01
SUPPLY CURRENT (µA)
GAIN (dB)
Output Short-Circuit Current vs
Supply Voltage
SHORT-CIRCIUT OUTPUT CURRENT, I
OUT
(mA)
6
4
2
0
–3
–6
–9
–12
–15
4
V
OUT
= V
+
I
SINK
PIN 1 = V
V
OUT
= V
I
SOURCE
PIN 1 = OPEN
T
A
= 25°C
SUPPLY CURRENT (µA)
GAIN (dB)
PIN 1 = V
PIN 1 = OPEN
0
8
12 16 20 24 28 32 36
TOTAL SUPPLY VOLTAGE, V
+
TO V
(V)
LTC1150 • TPC04
4
U W
Supply Current vs Temperature
1400
1200
1000
800
600
400
200
–55
V
S
=
±
15V
Gain/Phase vs Frequency
120
100
80
60
40
20
0
–20
V
S
=
±
15V
C
L
= 100pF
PHASE
GAIN
100
60
80
PHASE (DEGREES)
120
140
160
180
200
1k
10k
100k
FREQUENCY (Hz)
1M
220
10M
95
5
35
65
–25
AMBIENT TEMPERATURE (°C)
125
–40
100
LTC1150 • TPC02
LTC1150 • TPC03
Supply Current vs R
SET
1200
1000
800
600
400
200
V
S
=
±
15V
T
A
= 25°C
120
100
80
Gain/Phase vs Frequency
V
S
=
±
15V
C
L
= 100pF
PIN 1 = –15V
PHASE
60
GAIN
40
20
0
–20
140
160
180
200
1k
10k
100k
FREQUENCY (Hz)
1M
220
10M
120
60
80
100
PHASE (DEGREES)
1k
10k
100k
R
SET
, PIN 1 TO V
(Ω)
1M
–40
100
LTC1150 • TPC05
LTC1150 • TPC06
1150fb
LTC1150
TYPICAL PERFOR A CE CHARACTERISTICS
Input Bias Current vs Supply
Voltage
12
10
T
A
= 25°C
V
CM
= OV
INPUT BIAS CURRENT (pA)
OUTPUT VOLTAGE (Vp-p)
8
6
4
2
0
0
±
2
GAIN (dB)
±
4
±
6
±
8
±
10
±
12
±
14
±
16
SUPPLY VOLTAGE (V)
LTC1150 • TPC07
Input Bias Current vs Input
Common Mode Voltage
40
30
INPUT BIAS CURRENT (pA)
V
S
=
±
15V
T
A
= 25°C
–I
B
20
10
0
–10
+I
B
–20
–30
–40
–15
5
10
–10
–5
0
INPUT COMMON MODE VOLTAGE (V)
LTC1150 • TPC10
INPUT BIAS CURRENT (pA)
–100
COMMON MODE RANGE (V)
CMRR vs Frequency
160
140
120
CMRR (dB)
80
60
40
20
0
1
10
100
1k
FREQUENCY (Hz)
10k
100k
PSRR (dB)
100
100
80
60
40
20
0
1
10
NEGATIVE SUPPLY,
PIN 1 = OPEN
POSITIVE SUPPLY,
PIN 1 = V
OFFSET VOLTAGE (µV)
LTC1150 • TPC13
U W
15
Undistorted Output Swing vs
Frequency
30
25
20
15
10
5
0
100
120
100
Gain/Phase vs Frequency
V
S
=
±2.5V
C
L
= 100pF
PHASE
GAIN
60
80
100
PIN 1 = V
R
L
= 10k
80
60
40
20
0
–20
PHASE (DEGREES)
120
140
160
180
200
1k
10k
100k
FREQUENCY (Hz)
1M
220
10M
PIN 1 = FLOATING
R
L
= 100k
1k
10k
100k
FREQUENCY (Hz)
1M
–40
100
LTC1150 • TPC08
LTC1150 • TPC09
Input Bias Current vs Temperature
–1000
V
CM
= 0
V
S
=
±
15V
Common Mode Input Range vs
Supply Voltage
15
T
A
= 25°C
10
5
0
–5
–10
–I
B
–10
+I
B
–1
–50 –25
0
25
50
75
100
125
–15
0
±2.5
TEMPERATURE (°C)
LTC1150 • TPC11
±5
±7.5 ±10 ±12.5
SUPPLY VOLTAGE (V)
±15
LTC1150 • TPC12
PSRR vs Frequency
160
POSITIVE SUPPLY, PIN 1 = OPEN
140
120
Offset Voltage vs
Sampling Frequency
10
V
A
=
±
15V
T
A
= 25°C
PIN 1 = V
8
6
4
PIN 1 = OPEN
NEGATIVE SUPPLY, PIN 1 = V
2
0
100
1k
FREQUENCY (Hz)
10k
100k
0
2k
1k
SAMPLING FREQUENCY, f
S
(Hz)
3k
LTC1150 • TPC14
LTC1150 • TPC15
1150fb
5
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参数对比
与LTC1150CJ8相近的元器件有:LTC1150、LTC1150MJ8、LTC1150CN8、LTC1150_03、LTC1150CS8。描述及对比如下:
型号 LTC1150CJ8 LTC1150 LTC1150MJ8 LTC1150CN8 LTC1150_03 LTC1150CS8
描述 OP-AMP, 10 uV OFFSET-MAX, 2.5 MHz BAND WIDTH, PDIP8 OP-AMP, 10 uV OFFSET-MAX, 2.5 MHz BAND WIDTH, PDIP8 OP-AMP, 10 uV OFFSET-MAX, 2.5 MHz BAND WIDTH, PDIP8 OP-AMP, 10 uV OFFSET-MAX, 2.5 MHz BAND WIDTH, PDIP8 OP-AMP, 10 uV OFFSET-MAX, 2.5 MHz BAND WIDTH, PDIP8 OP-AMP, 10 uV OFFSET-MAX, 2.5 MHz BAND WIDTH, PDIP8
放大器类型 OPERATIONAL AMPLIFIER OP-AMP OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OP-AMP OPERATIONAL AMPLIFIER
最大输入失调电压 10 µV 10 mV 10 µV 10 µV 10 mV 10 µV
功能数量 1 1 1 1 1 1
端子数量 8 8 8 8 8 8
温度等级 INDUSTRIAL INDUSTRIAL MILITARY INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
是否Rohs认证 不符合 - 不符合 不符合 - 不符合
零件包装代码 DIP - DIP DIP - SOIC
包装说明 DIP, DIP8,.3 - DIP, DIP8,.3 DIP, DIP8,.3 - 0.150 INCH, PLASTIC, SO-8
针数 8 - 8 8 - 8
Reach Compliance Code unknow - compli _compli - _compli
ECCN代码 EAR99 - EAR99 EAR99 - EAR99
架构 CHOPPER-STAB - CHOPPER-STAB CHOPPER-STAB - CHOPPER-STAB
最大平均偏置电流 (IIB) 0.001 µA - 0.0025 µA 0.001 µA - 0.001 µA
25C 时的最大偏置电流 (IIB) 0.00005 µA - 0.00003 µA 0.00005 µA - 0.00005 µA
最小共模抑制比 110 dB - 110 dB 110 dB - 110 dB
标称共模抑制比 130 dB - 130 dB 130 dB - 130 dB
频率补偿 YES - YES YES - YES
JESD-30 代码 R-GDIP-T8 - R-GDIP-T8 R-PDIP-T8 - R-PDSO-G8
JESD-609代码 e0 - e0 e0 - e0
低-偏置 YES - YES YES - YES
低-失调 YES - YES YES - YES
负供电电压上限 -16 V - -16 V -16 V - -16 V
标称负供电电压 (Vsup) -15 V - -15 V -15 V - -15 V
最高工作温度 85 °C - 125 °C 85 °C - 85 °C
最低工作温度 -40 °C - -55 °C -40 °C - -40 °C
封装主体材料 CERAMIC, GLASS-SEALED - CERAMIC, GLASS-SEALED PLASTIC/EPOXY - PLASTIC/EPOXY
封装代码 DIP - DIP DIP - SOP
封装等效代码 DIP8,.3 - DIP8,.3 DIP8,.3 - SOP8,.25
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR - RECTANGULAR
封装形式 IN-LINE - IN-LINE IN-LINE - SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - 235
电源 5/+-15 V - 5/+-15 V 5/+-15 V - 5/+-15 V
可编程功率 YES - YES YES - YES
认证状态 Not Qualified - Not Qualified Not Qualified - Not Qualified
座面最大高度 5.08 mm - 5.08 mm 4.445 mm - 1.75 mm
标称压摆率 3 V/us - 3 V/us 3 V/us - 3 V/us
最大压摆率 1.8 mA - 1.8 mA 1.8 mA - 1.8 mA
供电电压上限 16 V - 16 V 16 V - 16 V
标称供电电压 (Vsup) 15 V - 15 V 15 V - 15 V
表面贴装 NO - NO NO - YES
技术 CMOS - CMOS CMOS - CMOS
端子面层 Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
端子节距 2.54 mm - 2.54 mm 2.54 mm - 1.27 mm
处于峰值回流温度下的最长时间 NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - 20
标称均一增益带宽 2500 kHz - 2500 kHz 2500 kHz - 2500 kHz
最小电压增益 10000000 - 10000000 10000000 - 10000000
宽度 7.62 mm - 7.62 mm 7.62 mm - 3.9 mm
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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