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LY625128LL-45LLT

Standard SRAM, 512KX8, 45ns, CMOS, PDSO32, TSOP1-32
512K × 8 标准存储器, 55 ns, PDSO32

器件类别:存储    存储   

厂商名称:Lyontek

厂商官网:http://www.lyontek.com.tw/index.html

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
Objectid
1931266456
包装说明
TSOP1,
Reach Compliance Code
compliant
ECCN代码
3A991.B.2.A
最长访问时间
45 ns
I/O 类型
COMMON
JESD-30 代码
R-PDSO-G32
JESD-609代码
e3
长度
18.4 mm
内存密度
4194304 bit
内存集成电路类型
STANDARD SRAM
内存宽度
8
湿度敏感等级
3
功能数量
1
端口数量
1
端子数量
32
字数
524288 words
字数代码
512000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
512KX8
输出特性
3-STATE
可输出
YES
封装主体材料
PLASTIC/EPOXY
封装代码
TSOP1
封装等效代码
TSSOP32,.8,20
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE
并行/串行
PARALLEL
峰值回流温度(摄氏度)
260
座面最大高度
1.2 mm
最大待机电流
0.00003 A
最小待机电流
1.5 V
最大压摆率
0.07 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin (Sn)
端子形式
GULL WING
端子节距
0.5 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
宽度
8 mm
文档预览
®
LY625128
Rev. 2.5
512K X 8 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Rev. 1.3
Rev. 1.4
Rev. 1.5
Rev. 2.0
Rev. 2.1
Description
Initial Issue
Revised I
SB1
/I
DR
Revised Test Condition of I
CC
Added -45ns Spec.
Added P-DIP PKG
Revised Test Condition of I
SB1
/I
DR
Adding PKG type : 44 TSOP-II
Adding SL Spec.
Revised
ABSOLUTE MAXIMUN RATINGS
Added I
SB1
/I
DR
values when T
A
= 25
and T
A
= 40
Revised
FEATURES
&
ORDERING INFORMATION
Lead free and green package available
to
Green package
available
Added packing type in
ORDERING INFORMATION
Deleted T
SOLDER
in
ABSOLUTE MAXIMUN RATINGS
Deleted -35ns Spec.
Revised V
DR
Revised
PACKAGE OUTLINE DIMENSION
in page
11/12/13/14
Revised
ORDERING INFORMATION
in page 16
Deleted PKG type : 44 TSOP-II
Issue Date
Jul.19.2005
Oct.31.2005
Sep.20.2006
Jan.12.2007
May.14.2007
Jun.4.2007
Jul.11.2007
Mar.30.2009
Rev. 2.2
Rev. 2.3
Rev. 2.4
Rev. 2.5
Sep.11.2009
May.7.2010
Aug.30.2010
Feb.21.2012
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
0
®
LY625128
Rev. 2.5
512K X 8 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The LY625128 is a 4,194,304-bit low power CMOS
static random access memory organized as 524,288
words by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY625128 is well designed for very low power
system applications, and particularly well suited for
battery back-up nonvolatile memory application.
The LY625128 operates from a single power
supply of 4.5V ~ 5.5V and all inputs and outputs are
fully TTL compatible
FEATURES
Fast access time : 45/55/70ns
Low power consumption:
Operating current : 45/40/30mA (TYP.)
Standby current : 5μA@5V(TYP.) LL/SL version
3μA@3V(TYP.) SL version
Single 4.5V ~ 5.5V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 32-pin 450 mil SOP
32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm STSOP
36-ball 6mm x 8mm TFBGA
32-pin 600 mil P-DIP
PRODUCT FAMILY
Product
Operating
Family
Temperature
0 ~ 70℃
LY625128(LL)
-20 ~ 80℃
LY625128(LLE)
-40 ~ 85℃
LY625128(LLI)
0 ~ 70℃
LY625128(SL)
LY625128(SLE) -20 ~ 80℃
-40 ~ 85℃
LY625128(SLI)
Vcc Range
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
Speed
45/55/70ns
45/55/70ns
45/55/70ns
45/55/70ns
45/55/70ns
45/55/70ns
Power Dissipation
Standby(I
SB1,
TYP.)
Operating(Icc,TYP.)
-
5µA@5V
45/40/30mA
-
5µA@5V
45/40/30mA
-
5µA@5V
45/40/30mA
3µA@3V 5µA@5V
45/40/30mA
3µA@3V 5µA@5V
45/40/30mA
3µA@3V 5µA@5V
45/40/30mA
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
1
®
LY625128
Rev. 2.5
512K X 8 BIT LOW POWER CMOS SRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0 - A18
DQ0 – DQ7
DECODER
512Kx8
MEMORY ARRAY
CE#
WE#
OE#
V
CC
V
SS
NC
A0-A18
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
WE#
OE#
CONTROL
CIRCUIT
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2
®
LY625128
Rev. 2.5
512K X 8 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
Vss
1
2
3
4
5
32
31
30
29
28
Vcc
A15
A17
WE#
A13
A8
A9
A11
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
A11
A9
A8
A13
WE#
A17
A15
Vcc
A18
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
Vss
DQ2
DQ1
DQ0
A0
A1
A2
A3
LY625128
SOP/P-DIP
6
7
8
9
10
11
12
13
14
15
16
27
26
25
24
23
22
21
20
19
18
17
LY625128
TSOP-I/STSOP
A
B
C
D
E
F
G
H
A0
DQ4
DQ5
Vss
Vcc
DQ6
A1
A2
NC
WE#
NC
A3
A4
A5
A6
A7
A8
DQ0
DQ1
Vcc
Vss
A18
A17
DQ2
A15 DQ3
A13
A14
DQ7 OE# CE# A16
A9
A10
A11
A12
1
2
3
4
TFBGA
5
6
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
3
®
LY625128
Rev. 2.5
512K X 8 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 6.5
-0.5 to V
CC
+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
L
L
L
OE#
X
H
L
X
WE#
X
H
H
L
I/O OPERATION
High-Z
High-Z
D
OUT
D
IN
SUPPLY CURRENT
I
SB1
I
CC
,I
CC1
I
CC
,I
CC1
I
CC
,I
CC1
H = V
IH
, L = V
IL
, X = Don't care.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
4
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