®
LY626416
Rev. 1.6
64K X 16 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Description
Initial Issue
Revised typos in page 1,4,5(35ns to 45ns)
Added I
SB1
/I
DR
values when T
A
= 25
℃
and T
A
= 40
℃
Revised I
SB1 (MAX)
of SL grade
Revised
FEATURES
&
ORDERING INFORMATION
Lead free and green package available
to
Green package
available
Added packing type in
ORDERING INFORMATION
Revised I
SB1
/I
DR(MAX)
when T
A
= 25
℃
and T
A
= 40℃
Deleted T
SOLDER
in
ABSOLUTE MAXIMUN RATINGS
Revised V
DR
Revised
PACKAGE OUTLINE DIMENSION
in page 11
Revised
ORDERING INFORMATION
in page 12
Issue Date
Oct.30.2007
Nov.2.2007
Mar.30.2009
Rev. 1.3
Rev. 1.4
Rev. 1.5
Rev. 1.6
Apr.13.2009
Sep.11.2009
May.6.2010
Aug.25.2010
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
®
LY626416
Rev. 1.6
64K X 16 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The LY626416 is a 1,048,576-bit low power CMOS
static random access memory organized as 65,536
words by 16 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY626416 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY626416 operates from a single power
supply of 4.5V ~ 5.5V and all inputs and outputs are
fully TTL compatible
FEATURES
Fast access time : 45/55/70ns
Low power consumption:
Operating current : 50/40/30mA (TYP.)
Standby current : 3μA@5V(TYP.) LL/SL version
2μA@3V(TYP.) SL version
Single 4.5V ~ 5.5V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Operating
Family
Temperature
0 ~ 70℃
LY626416(LL)
-20 ~ 80℃
LY626416(LLE)
-40 ~ 85℃
LY626416(LLI)
0 ~ 70℃
LY626416(SL)
LY626416(SLE) -20 ~ 80℃
-40 ~ 85℃
LY626416(SLI)
Vcc Range
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
Speed
45/55/70ns
45/55/70ns
45/55/70ns
45/55/70ns
45/55/70ns
45/55/70ns
Power Dissipation
Standby(I
SB1,
TYP.)
Operating(Icc,TYP.)
-
3µA@5V
50/40/30mA
-
3µA@5V
50/40/30mA
-
3µA@5V
50/40/30mA
2µA@3V
3µA@5V
50/40/30mA
2µA@3V
3µA@5V
50/40/30mA
2µA@3V
3µA@5V
50/40/30mA
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY626416
Rev. 1.6
64K X 16 BIT LOW POWER CMOS SRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0 - A15
CE#
WE#
OE#
LB#
UB#
V
CC
DQ0 – DQ15 Data Inputs/Outputs
DECODER
64Kx16
MEMORY ARRAY
A0-A15
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
V
SS
I/O DATA
CIRCUIT
COLUMN I/O
CE#
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY626416
Rev. 1.6
64K X 16 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
A4
A3
A2
A1
A0
CE#
DQ0
DQ1
DQ2
DQ3
Vcc
Vss
DQ4
DQ5
DQ6
DQ7
WE#
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
44
43
42
41
40
39
38
37
A5
A6
A7
OE#
UB#
LB#
DQ15
DQ14
DQ13
DQ12
Vss
Vcc
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
1
2
3
4
TFBGA
5
6
F
G
H
DQ14 DQ13 A14
DQ15 NC
NC
A8
A12
A9
A15 DQ5 DQ6
A13 WE# DQ7
A10
A11
NC
LY626416
9
10
11
12
13
14
15
16
17
18
19
20
21
22
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
B
C
D
E
LB# OE#
DQ8 UB#
A0
A3
A1
A4
A6
A7
NC
A2
NC
CE# DQ0
DQ1 DQ2
DQ3 Vcc
DQ4 Vss
DQ9 DQ10 A5
Vss DQ11 NC
Vcc DQ12 NC
TSOP II
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 6.5
-0.5 to V
CC
+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
®
LY626416
Rev. 1.6
64K X 16 BIT LOW POWER CMOS SRAM
TRUTH TABLE
MODE
Standby
Output Disable
Read
CE#
H
X
L
L
L
L
L
L
L
L
OE#
X
X
H
H
L
L
L
X
X
X
WE# LB#
X
X
H
H
H
H
H
L
L
L
X
H
L
X
L
H
L
L
H
L
UB#
X
H
X
L
H
L
L
H
L
L
I/O OPERATION
DQ0-DQ7
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
D
OUT
High – Z
D
OUT
High – Z
D
OUT
D
OUT
D
IN
High – Z
D
IN
High – Z
D
IN
D
IN
SUPPLY CURRENT
I
SB1
I
CC
,I
CC1
I
CC
,I
CC1
Write
Note:
I
CC
,I
CC1
H = V
IH
, L = V
IL
, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
V
CC
*1
Input High Voltage
V
IH
*2
Input Low Voltage
V
IL
Input Leakage Current
I
LI
V
CC
≧
V
IN
≧
V
SS
Output Leakage
V
CC
≧
V
OUT
≧
V
SS
,
I
LO
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -1mA
Output Low Voltage
V
OL
I
OL
= 2mA
- 45
Cycle time = Min.
I
CC
CE# = V
IL
, I
I/O
= 0mA
- 55
Other pins at V
IL
or V
IH
Average Operating
- 70
Power supply Current
Cycle time = 1µs
I
CC1
CE# = 0.2V , I
I/O
= 0mA
Other pins at 0.2V or V
CC
- 0.2V
LL/LLE/LLI
*5
SL
25℃
CE#
≧
V
CC
- 0.2V
*5
SLE
Standby Power
Others at 0.2V or
I
SB1
*5
40℃
SLI
Supply Current
V
CC
- 0.2V
SL
SLE/SLI
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
5. This parameter is measured at V
CC
= 3.0V
MIN.
4.5
2.4
- 0.2
-1
-1
2.4
-
-
-
-
-
-
-
-
-
-
TYP.
5.0
-
-
-
-
-
-
50
40
30
4
3
2
2
3
3
*4
MAX.
5.5
V
CC
+0.3
0.6
1
1
-
0.4
80
60
50
10
50
5
5
20
25
UNIT
V
V
V
µA
µA
V
V
mA
mA
mA
mA
µA
µA
µA
µA
µA
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
NXP MCU
