Not for New Designs. Alternative Device: TNPW e3
M10, M11, M12, M25
www.vishay.com
Vishay Draloric
Thin Film Rectangular Chip Resistors
FEATURES
• Metal film layer on high quality ceramic
• Protective top coat
• Pure tin on nickel barrier layer
• Low temperature coefficient and tight tolerances
• 56 days at 40 °C and 93 % relative humidity down to
± 0.2 %
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TECHNICAL SPECIFICATIONS
DESCRIPTION
Imperial size
Metric size code
Resistance range
Resistance tolerance
Temperature coefficient
Rated dissipation,
P
70
Operating voltage,
U
max.
AC
RMS
/DC
Permissible film
temperature,
F max.
Operating temperature
range
Insulation voltage:
1 min;
U
ins
Failure rate: FIT
observed
> 50 V
> 100 V
0.3 x
10
-9
/h
> 200 V
> 300 V
0.063 W
25 V
M10
0402
RR1005M
10
to 20 k
± 1 %; ± 0.5 %
0.100 W
75 V
125 °C (155 °C)
-55 °C to 125 °C (155 °C)
M11
0603
RR1608M
10
to 56 k
M12
0805
RR2012M
10
to 100 k
± 1 %; ± 0.5 %; ± 0.25 %; ± 0.1 %
± 50 ppm/K; ± 25 ppm/K
0.125 W
150 V
0.250 W
200 V
M25
1206
RR3216M
10
to 220 k
Notes
• Power rating depends on the max. temperature at the solder point, the component placement density and the substrate material
• Marking: 4 digits, M10 - no marking
MAXIMUM RESISTANCE CHANGE AT RATED DISSIPATION
OPERATION MODE
M10
Rated dissipation,
P
70
M11
M12
M25
Operating temperature range
Permissible film temperature,
F max.
M10
M11
Max. resistance change at
P
70
for resistance range,
|R/R|, after:
M12
M25
1000 h
STANDARD
0.063 W
0.100 W
0.125 W
0.250 W
-55 °C to 125 °C (155 °C)
125 °C (155 °C)
10
to 20 k
10
to 56 k
10
to 100 k
10
to 220 k
0.2 %
Note
• A suitable low thermal resistance of the circuit board assembly must be safeguarded in order to maintain the film temperature of the resistors
within the specified limits. Please consider the application note “Thermal Management in Surface-Mounted Resistor Applications”
(www.vishay.com/doc?28844) for information on the general nature of thermal resistance.
Revision: 10-Jun-16
Document Number: 20028
1
For technical questions, contact:
thinfilmchip@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Not for New Designs. Alternative Device: TNPW e3
M10, M11, M12, M25
www.vishay.com
Vishay Draloric
TEMPERATURE COEFFICIENT AND RESISTANCE RANGE
TYPE
M10
TCR
± 25 ppm/K
TOLERANCE
± 0.5 %
± 0.5 %
± 50 ppm/K
± 0.1 %
M11
± 25 ppm/K
±1%
± 0.5 %
± 0.1 %
± 50 ppm/K
± 0.1 %
± 0.5 %
M12
± 25 ppm/K
± 0.25 %
± 0.1 %
± 50 ppm/K
± 0.1 %
±1%
M25
± 25 ppm/K
± 0.5 %
± 0.1 %
10
to 220 k
10
to 100 k
47
to 220 k
47
to 100 k
E24; E96
RESISTANCE
10
to 20 k
47
to 56 k
100
to 56 k
51
to 56 k
47
to 56 k
10
to 56 k
E-SERIES
PACKAGING
TYPE
M10
CODE
P0
P1
M11
M12
M25
P5
PN
QUANTITY
10 000
1000
(1)
5000
20 000
Paper tape according
to IEC 60286-3, Type 1a
PACKAGING STYLE
WIDTH
PITCH
2 mm
PACKAGING
DIMENSIONS
Ø 180 mm/7"
Ø 180 mm/7"
8 mm
4 mm
Ø 180 mm/7"
Ø 330 mm/13"
Note
(1)
For TCR
25 ppm/K and tolerance
0.1 % only
Revision: 10-Jun-16
Document Number: 20028
2
For technical questions, contact:
thinfilmchip@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Not for New Designs. Alternative Device: TNPW e3
M10, M11, M12, M25
www.vishay.com
Vishay Draloric
PART NUMBER AND PRODUCT DESCRIPTION
PART NUMBER: M1004020D5620DP000
M
1
0
0
4
0
2
0
D
5
6
2
0
D
P
0
0
0
TYPE / SIZE
M100402
M110603
M120805
M251206
VERSION
0
= neutral
TCR
D
= ± 25 ppm/K
C
= ± 50 ppm/K
RESISTANCE
3 digit value
1 digit multiplier
Multiplier
8
= x 10
-2
9
= x 10
-1
0
= x 10
0
1
= x 10
1
2
= x 10
2
3
= x 10
3
TOLERANCE
B
= ± 0.1 %
C
= ± 0.25 %
D
= ± 0.5 %
F
=±1%
PACKAGING
P0
P1
P5
PN
PRODUCT DESCRIPTION: M10 25 562R 0.5 % P0
M10
TYPE
M10
M11
M12
M25
25
TCR
±
25
ppm/K
±
50
ppm/K
562R
RESISTANCE
49K9
= 49.9 k
5R1
= 5.1
0.5 %
TOLERANCE
±
0.1
%
±
0.25
%
±
0.5
%
±
1
%
P0
PACKAGING
P0
P1
P5
PN
Note
• Products can be ordered using either the PART NUMBER or the PRODUCT DESCRIPTION
Temperature Rise in °C
80
70
60
50
40
30
20
10
0
0
0402 0603 0805
Rated Power in %
90
1206
120
100
80
60
40
20
0
-55
0.1
0.2
0.3
0.4
0.5
-25
0
25
50
Temperature Rise
Power in W
Derating
75
100
125
150 175
70
Ambient Temperature in °C
Note
• The solid line is based on IEC / EN reference test conditions
which is considered as standard mode. However, above that the
maximum permissible film temperature is 155 °C (dashed line).
Revision: 10-Jun-16
Document Number: 20028
3
For technical questions, contact:
thinfilmchip@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Not for New Designs. Alternative Device: TNPW e3
M10, M11, M12, M25
www.vishay.com
Vishay Draloric
Current Noise in µV/V
Non-Linearity A
3
in dB
120
110
100
M25
3
2
1
0.5
0.3
M10
M11
M12 M25
90
0.1
80
70
60
10
M10
M12
M11
0.05
0.03
100
1K
Non-Linearity
10K
100K
Resistance Value in
Ω
0.01
100
1K
10K
Current Noise
100K
1M
Resistance Value in
Ω
Phase Angle in
ϑ°
[Z]-RO in %
RO
60
M11
40
20
0
-20
1 kΩ
-40
-60
-80
4.75 kΩ
10 kΩ
2
5
10
50
100
500
1000
Frequency f in MHz
10
Ω
100
Ω
60
M11
40
20
0
-20
-40
4.75 kΩ
-60
10 kΩ
-80
2
5
10
50
100
500
1000
10
Ω
100
100
Ω
1 kΩ
HF Performance
HF Performance
Frequency f in MHz
Phase Angle in
ϑ°
[Z]-RO in %
RO
60
40
20
0
10
Ω
100
Ω
1 kΩ
M12
60
M12
40
20
0
-20
-40
-60
10
Ω
100
Ω
1 kΩ
-20
-40
-60
10 kΩ
-80
2
5
10
50
100
500 1000
Frequency f in MHz
-80
10 kΩ
2
5
10
50
100
500
1000
Frequency f in MHz
HF Performance
HF Performance
Revision: 10-Jun-16
Document Number: 20028
4
For technical questions, contact:
thinfilmchip@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Not for New Designs. Alternative Device: TNPW e3
M10, M11, M12, M25
www.vishay.com
Vishay Draloric
Test Voltage in V
3K
Test Voltage in V
3K
M12
1K
1K
M12
M11
M11
100
100
10
10R
100R
1K
10K
100K
Resistance Value in
Ω
10
10R
100R
1K
10K
100K
Resistance Value in
Ω
Single-Pulse High Voltage Overload Test
1.2/50 µs EN140000 4.27
Single-Pulse High Voltage Overload Test
10/700 µs EN140000 4.27
M25
M12
M11
M10
Power Rating
P
in W
Power Rating
P
in W
100
100
M25
10
M12
M11
M10
1
10
1
0.1
Secondary conditions:
a)
P
0 (peak pulse, single pulse)
b)
ϑ
u
≤
70
°
C
c)
U
max.
see diagram (Max. pulse voltage)
1 0
-4
1 0
-3
1 0
-2
0.1
0.01
10
-5
Pulse Rating
P
0
10
-1
1
10
Square Pulse
t
i
in s
0.01
10
-5
Secondary conditions:
a)
P
≤
P
70
(permissible constant power at
ϑ
u = 70
°
C)
b)
ϑ
u
≤
70
°
C
c)
U
max.
see diagram (Max. pulse voltage)
10
-4
10
-3
10
-2
10
-1
1
10
Pulse Rating
P
≤
P
70
Square Pulse
t
i
in s
Pulse Voltage
Ü
max
in V
1000
Secondary conditions:
a)
P
see diagram (pulse rating)
b)
ϑ
u
≤
70
°
C
800
M25
600
M12
400
200
M11
M10
0
10
-5
10
-4
10
-3
10
-2
Maximum Pulse Voltage
10
-1
1
10
Square Pulse
t
i
in s
Revision: 10-Jun-16
Document Number: 20028
5
For technical questions, contact:
thinfilmchip@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
stm32/stm8
