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M1MA151WKT1G

Diodes - General Purpose, Power, Switching SS SWCH DIO 40V TR

器件类别:分立半导体    二极管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
零件包装代码
SC-59
包装说明
LEAD FREE, CASE 318D-04, SC-59, 3 PIN
针数
3
制造商包装代码
318D-04
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
2 weeks
Samacsys Description
NULL
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.2 V
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值正向电流
0.5 A
元件数量
2
端子数量
3
最高工作温度
150 °C
最大输出电流
0.1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
最大功率耗散
0.2 W
认证状态
Not Qualified
最大重复峰值反向电压
40 V
最大反向恢复时间
0.003 µs
表面贴装
YES
端子面层
Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
40
文档预览
M1MA151WK, M1MA152WK
Common Cathode Silicon
Dual Switching Diodes
These Common Cathode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. These
devices are housed in the SC−59 package which is designed for low
power surface mount applications.
Features
www.onsemi.com
SC−59 PACKAGE SINGLE SILICON
SWITCHING DIODES 40 V/80 V 100 mA
SURFACE MOUNT
Fast t
rr
, < 3.0 ns
Low C
D
, < 2.0 pF
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Reverse Voltage
M1MA151WK
M1MA152WK
Peak Reverse Voltage
M1MA151WK
M1MA152WK
Forward Current
Single
Dual
Peak Forward Current
Single
Dual
Peak Forward Surge Current
Single
Dual
Symbol
V
R
40
80
V
RM
40
80
I
F
100
150
I
FM
225
340
I
FSM
(Note 1)
500
750
mAdc
mAdc
Vdc
Vdc
Value
Unit
SC−59
CASE 318D
STYLE 3
3 CATHODE
1
ANODE 2
MARKING DIAGRAM
Mx M
G
G
mAdc
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
P
D
T
J
T
stg
Max
200
150
−55 to + 150
Unit
mW
°C
°C
Mx = Device Code
x
=T for 151
U for 152
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. t = 1 sec
ORDERING INFORMATION
Device
M1MA151WKT1G
SM1MA151WKT1G
M1MA152WKT1G
NSVM1MA152WKT1G
Package
SC−59
(Pb−Free)
SC−59
(Pb−Free)
SC−59
(Pb−Free)
SC−59
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
3,000 / Tape &
Reel
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
1
May, 2015 − Rev. 12
Publication Order Number:
M1MA151WKT1/D
M1MA151WK, M1MA152WK
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
Characteristic
Reverse Voltage Leakage Current
M1MA151WK
M1MA152WK
Forward Voltage
Reverse Breakdown Voltage
M1MA151WK
M1MA152WK
Diode Capacitance
Reverse Recovery Time (Figure 1)
2. t
rr
Test Circuit
Symbol
I
R
V
R
= 35 V
V
R
= 75 V
V
F
V
R
I
F
= 100 mA
I
R
= 100
mA
V
R
= 0, f = 1.0 MHz
I
F
= 10 mA, V
R
= 6.0 V,
R
L
= 100
W,
I
rr
= 0.1 I
R
40
80
0.1
0.1
1.2
2.0
3.0
Condition
Min
Max
Unit
mAdc
Vdc
Vdc
pF
ns
C
D
t
rr
(Note 2)
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
t
r
t
p
OUTPUT PULSE
t
rr
I
F
t
t
A
R
L
10%
I
rr
= 0.1 I
R
90%
V
R
t
p
= 2
ms
t
r
= 0.35 ns
I
F
= 10 mA
V
R
= 6 V
R
L
= 100
W
Figure 1. Reverse Recovery Time Equivalent Test Circuit
www.onsemi.com
2
M1MA151WK, M1MA152WK
1000
I
F
, FORWARD CURRENT (mA)
I
R
, REVERSE CURRENT (mA)
100
10
1
0.1
0.01
0.001
0.0001
T
A
= −55°C
T
A
= 25°C
T
A
= 150°C
100
10
1
155°C
0.1
0
0.2
25°C
0.4
0.6
T
A
= −55°C
0.8
1
1.2
1.4
0.00001
0
10
20
30
40
50
60
70
80
V
R
, REVERSE VOLTAGE (V)
V
F
, FORWARD VOLTAGE (V)
Figure 2. Forward Voltage
0.64
C
d
, DIODE CAPACITANCE (pF)
0.62
0.6
0.58
0.56
0.54
0.52
0.5
Figure 3. Reverse Leakage
0
1
2
3
4
5
6
7
8
V
R
, REVERSE VOLTAGE (V)
Figure 4. Diode Capacitance
www.onsemi.com
3
M1MA151WK, M1MA152WK
PACKAGE DIMENSIONS
SC*
59
CASE 318D*
04
ISSUE H
D
NOTES:
1.  DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.  CONTROLLING DIMENSION: MILLIMETER.
DIM
A
A1
b
c
D
E
e
L
H
E
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
MILLIMETERS
NOM
MAX
1.15
1.30
0.06
0.10
0.43
0.50
0.14
0.18
2.90
3.10
1.50
1.70
1.90
2.10
0.40
0.60
2.80
3.00
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
3
H
E
1
E
2
b
e
A
A1
L
C
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
mm
inches
SCALE 10:1
*For additional information on our Pb
*
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com
4
M1MA151WKT1/D
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参数对比
与M1MA151WKT1G相近的元器件有:SM1MA151WKT1G。描述及对比如下:
型号 M1MA151WKT1G SM1MA151WKT1G
描述 Diodes - General Purpose, Power, Switching SS SWCH DIO 40V TR Diodes - General Purpose, Power, Switching SS SC59 SWCH DIO 40V TR
Brand Name ON Semiconductor ON Semiconductor
是否无铅 不含铅 不含铅
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 SC-59 SC-59
包装说明 LEAD FREE, CASE 318D-04, SC-59, 3 PIN LEAD FREE, CASE 318D-04, SC-59, 3 PIN
针数 3 3
制造商包装代码 318D-04 318D-04
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
Factory Lead Time 2 weeks 2 weeks
配置 COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
二极管元件材料 SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.2 V 1.2 V
JESD-30 代码 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e3 e3
湿度敏感等级 1 1
最大非重复峰值正向电流 0.5 A 0.5 A
元件数量 2 2
端子数量 3 3
最高工作温度 150 °C 150 °C
最大输出电流 0.1 A 0.1 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 NOT SPECIFIED
最大功率耗散 0.2 W 0.2 W
最大重复峰值反向电压 40 V 40 V
最大反向恢复时间 0.003 µs 0.003 µs
表面贴装 YES YES
端子面层 Tin (Sn) Tin (Sn)
端子形式 GULL WING GULL WING
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 40 NOT SPECIFIED
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