首页 > 器件类别 > 存储 > 存储

M27V256-100BN6

32KX8 OTPROM, 100ns, PDIP28, PLASTIC, DIP-28

器件类别:存储    存储   

厂商名称:ST(意法半导体)

厂商官网:http://www.st.com/

下载文档
器件参数
参数名称
属性值
厂商名称
ST(意法半导体)
零件包装代码
DIP
包装说明
DIP,
针数
28
Reach Compliance Code
unknown
ECCN代码
EAR99
最长访问时间
100 ns
JESD-30 代码
R-PDIP-T28
内存密度
262144 bit
内存集成电路类型
OTP ROM
内存宽度
8
功能数量
1
端子数量
28
字数
32768 words
字数代码
32000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
32KX8
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装形状
RECTANGULAR
封装形式
IN-LINE
并行/串行
PARALLEL
认证状态
Not Qualified
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
NO
技术
CMOS
温度等级
INDUSTRIAL
端子形式
THROUGH-HOLE
端子位置
DUAL
Base Number Matches
1
文档预览
M27V256
256 Kbit (32Kb x 8) Low Voltage UV EPROM and OTP EPROM
NOT FOR NEW DESIGN
s
s
M27V256 is replaced by the M27W256
3V to 3.6V LOW VOLTAGE in READ
OPERATION
ACCESS TIME: 90ns
LOW POWER CONSUMPTION:
– Active Current 10mA at 5MHz
– Standby Current 10µA
1
1
28
28
s
s
s
s
s
PROGRAMMING VOLTAGE: 12.75V
±
0.25V
PROGRAMMING TIME: 100µs/word
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 8Dh
FDIP28W (F)
PDIP28 (B)
DESCRIPTION
The M27V256 is a low voltage 256 Kbit EPROM
offered in the two ranges UV (ultra violet erase)
and OTP (one time programmable). It is ideally
suited for microprocessor systems and is orga-
nized as 32,768 by 8 bits.
The M27V256 operates in the read mode with a
supply voltage as low as 3V. The decrease in op-
erating power allows either a reduction of the size
of the battery or an increase in the time between
battery recharges.
The FDIP28W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For applications where the content is programmed
only one time and erasure is not required, the
M27V256 is offered in PDIP28, PLCC32 and
TSOP28 (8 x 13.4 mm) packages.
PLCC32 (K)
TSOP28 (N)
8 x 13.4mm
Figure 1. Logic Diagram
VCC
VPP
15
A0-A14
8
Q0-Q7
E
G
M27V256
VSS
AI01908
July 2000
This is information on a product still in production but not recommended for new designs.
1/15
M27V256
Figure 2A. DIP Connections
Figure 2B. LCC Connections
AI01909
VSS
DU
Q3
Q4
Q5
AI01910
Figure 2C. TSOP Connections
Table 1. Signal Names
A0-A14
Q0-Q7
Address Inputs
Data Outputs
Chip Enable
Output Enable
Program Supply
Supply Voltage
Ground
Not Connected Internally
Don’t Use
G
A11
A9
A8
A13
A14
VCC
VPP
A12
A7
A6
A5
A4
A3
22
21
28
1
M27V256
15
14
7
8
AI01911
A10
E
Q7
Q6
Q5
Q4
Q3
VSS
Q2
Q1
Q0
A0
A1
A2
E
G
V
PP
V
CC
V
SS
NC
DU
2/15
Q1
Q2
VPP
A12
A7
A6
A5
A4
A3
A2
A1
A0
Q0
Q1
Q2
VSS
1
28
2
27
3
26
4
25
5
24
6
23
7
22
M27V256
8
21
9
20
10
19
11
18
12
17
13
16
14
15
VCC
A14
A13
A8
A9
A11
G
A10
E
Q7
Q6
Q5
Q4
Q3
A6
A5
A4
A3
A2
A1
A0
NC
Q0
A7
A12
VPP
DU
VCC
A14
A13
1 32
A8
A9
A11
NC
G
A10
E
Q7
Q6
9
M27V256
25
17
M27V256
Table 2. Absolute Maximum Ratings
(1)
Symbol
T
A
T
BIAS
T
STG
V
IO (2)
V
CC
V
A9 (2)
V
PP
Parameter
Ambient Operating Temperature
(3)
Temperature Under Bias
Storage Temperature
Input or Output Voltage (except A9)
Supply Voltage
A9 Voltage
Program Supply Voltage
Value
–40 to 125
–50 to 125
–65 to 150
–2 to 7
–2 to 7
–2 to 13.5
–2 to 14
Unit
°C
°C
°C
V
V
V
V
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is V
CC
+0.5V with possible overshoot to V
CC
+2V for a period less than 20ns.
3. Depends on range.
Table 3. Operating Modes
Mode
Read
Output Disable
Program
Verify
Program Inhibit
Standby
Electronic Signature
Note: X = V
IH
or V
IL
, V
ID
= 12V
±
0.5V.
E
V
IL
V
IL
V
IL
Pulse
V
IH
V
IH
V
IH
V
IL
G
V
IL
V
IH
V
IH
V
IL
V
IH
X
V
IL
A9
X
X
X
X
X
X
V
ID
V
PP
V
CC
V
CC
V
PP
V
PP
V
PP
V
CC
V
CC
Q7-Q0
Data Out
Hi-Z
Data In
Data Out
Hi-Z
Hi-Z
Codes
Table 4. Electronic Signature
Identifier
Manufacturer’s Code
Device Code
A0
V
IL
V
IH
Q7
0
1
Q6
0
0
Q5
1
0
Q4
0
0
Q3
0
1
Q2
0
1
Q1
0
0
Q0
0
1
Hex Data
20h
8Dh
3/15
M27V256
Table 5. AC Measurement Conditions
High Speed
Input Rise and Fall Times
Input Pulse Voltages
Input and Output Timing Ref. Voltages
10ns
0 to 3V
1.5V
Standard
20ns
0.4V to 2.4V
0.8V and 2V
Figure 3. AC Testing Input Output Waveform
Figure 4. AC Testing Load Circuit
1.3V
High Speed
3V
1.5V
0V
DEVICE
UNDER
TEST
2.0V
0.8V
AI01822
1N914
3.3kΩ
Standard
2.4V
OUT
CL
0.4V
CL = 30pF for High Speed
CL = 100pF for Standard
CL includes JIG capacitance
AI01823B
Table 6. Capacitance
(1)
(T
A
= 25
°C,
f = 1 MHz)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Test Condit ion
V
IN
= 0V
V
OUT
= 0V
Min
Max
6
12
Unit
pF
pF
Note: 1. Sampled only, not 100% tested.
DEVICE OPERATION
The modes of operation of the M27V256 are listed
in the Operating Modes. A single power supply is
required in the read mode. All inputs are TTL lev-
els except for V
PP
and 12V on A9 for Electronic
Signature.
Read Mode
The M27V256 has two control functions, both of
which must be logically active in order to obtain
data at the outputs. Chip Enable (E) is the power
control and should be used for device selection.
Output Enable (G) is the output control and should
be used to gate data to the output pins, indepen-
dent of device selection. Assuming that the ad-
dresses are stable, the address access time
(t
AVQV
) is equal to the delay from E to output
(t
ELQV
). Data is available at the output after delay
of t
GLQV
from the falling edge of G, assuming that
E has been low and the addresses have been sta-
ble for at least t
AVQV
-t
GLQV
.
Standby Mode
The M27V256 has a standby mode which reduces
the supply current from 10mA to 10µA with low
voltage operation V
CC
3.6V, see Read Mode DC
Characteristics table for details. The M27V256 is
placed in the standby mode by applying a CMOS
high signal to the E input. When in the standby
mode, the outputs are in a high impedance state,
independent of the G input.
4/15
M27V256
Table 7. Read Mode DC Characteristics
(1)
(TA = 0 to 70°C or –40 to 85°C; V
CC
= 3.3V
±
10%; V
PP
= V
CC
)
Symbol
I
LI
I
LO
I
CC
I
CC1
I
CC2
I
PP
V
IL
V
IH (2)
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
I
OL
= 2.1mA
I
OH
= –400µA
I
OH
= –100µA
2.4
V
CC
– 0.7V
Test Condition
0V
V
IN
V
CC
0V
V
OUT
V
CC
E = V
IL
, G = V
IL
, I
OUT
= 0mA,
f = 5MHz, V
CC
3.6V
E = V
IH
E > V
CC
– 0.2V, V
CC
3.6V
V
PP
= V
CC
–0.3
2
Min
Max
±10
±10
10
1
10
10
0.8
V
CC
+ 1
0.4
Unit
µA
µA
mA
mA
µA
µA
V
V
V
V
V
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Maximum DC voltage on Output is V
CC
+0.5V.
Table 8A. Read Mode AC Characteristics
(1)
(T
A
= 0 to 70
°C
or –40 to 85°; V
CC
= 3.3V
±
10%; V
PP
= V
CC
)
M27V256
Symbol
Alt
Parameter
Test Condition
-90
(3)
Min
t
AVQV
t
ELQV
t
GLQV
t
EHQZ (2)
t
GHQZ (2)
t
AXQX
t
ACC
t
CE
t
OE
t
DF
t
DF
t
OH
Address Valid to Output Valid
Chip Enable Low to Output Valid
Output Enable Low to Output Valid
Chip Enable High to Output Hi-Z
Output Enable High to Output Hi-Z
Address Transition to Output
Transition
E = V
IL
, G = V
IL
G = V
IL
E = V
IL
G = V
IL
E = V
IL
E = V
IL
, G = V
IL
0
0
0
Max
90
90
40
25
25
0
0
0
-100
Min
Max
100
100
45
30
30
ns
ns
ns
ns
ns
ns
Unit
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, this product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and hat the output pins are only active when
data is desired from a particular memory device.
5/15
查看更多>
热门器件
热门资源推荐
器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
需要登录后才可以下载。
登录取消