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DRAM MODULE

M364C160(8)0BJ(T)0-C

Buffered 16Mx64 DIMM

(16Mx4 base)

Revision 0.1

June 1998

DRAM MODULE

Revision History

Version 0.0 (Sept. 1997)

M364C160(8)0BJ(T)0-C

• Removed two AC parameters t

CACP

(access time from CAS) and t

AAP

(access time from col. addr.) in

AC CHARACTERISTICS.

Version 0.1 (June 1998)

• The 3rd. generation of 64M DRAM components are applied for this module.

DRAM MODULE

M364C160(8)0BJ(T)0-C

M364C160(8)0BJ(T)0-C Fast Page Mode

16M x 64 DRAM DIMM Using 16Mx4, 4K & 8K Refresh, 5V

GENERAL DESCRIPTION

The Samsung M364C160(8)0BJ(T)0-C is a 16Mx64bits

Dynamic RAM high density memory module. The Samsung

M364C160(8)0BJ(T)0-C consists of sixteen CMOS 16Mx4bits

DRAMs in SOJ/TSOP-II 400mil packages and two 16 bits

driver IC in TSSOP package mounted on a 168-pin glass-

epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is

mounted on the printed circuit board for each DRAM. The

M364C160(8)0BJ(T)0-C is a Dual In-line Memory Module and

is intended for mounting into 168 pin edge connector sockets.

FEATURES

• Part Identification

Part number

M364C1600BJ0-C

M364C1600BT0-C

M364C1680BJ0-C

M364C1680BT0-C

•

PKG

SOJ

TSOP

SOJ

TSOP

4K/64ms

8K/64ms

Ref.

CBR Ref.

ROR Ref.

4K/64ms

PERFORMANCE RANGE

Speed

-C50

-C60

RAC

50ns

60ns

CAC

18ns

20ns

90ns

110ns

35ns

40ns

Fast Page Mode Operation

CAS-before-RAS Refresh capability

RAS-only and Hidden refresh capability

TTL compatible inputs and outputs

Single 5V±10% power supply

JEDEC standard pinout & Buffered PDpin

Buffered input except RAS and DQ

PCB : Height(1250mil), double sided component

PIN CONFIGURATIONS

Pin Front Pin

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

*DQ8

DQ9

DQ10

DQ11

DQ12

DQ13

DQ14

DQ15

DQ16

*DQ17

RSVD

CAS0

Front

CAS2

RAS0

OE0

A10

A12

RFU

OE2

RAS2

CAS4

CAS6

RSVD

DQ18

DQ19

DQ20

DQ21

Front

Back

Pin Back

DQ58

DQ59

DQ60

RFU

DQ61

*DQ62

DQ63

DQ64

DQ65

DQ66

DQ67

DQ68

DQ69

DQ70

*DQ71

PD2

PD4

PD6

PD8

ID1

57 DQ22 85

113 CAS3 141

58 DQ23 86 DQ36 114 *RAS1 142

87 DQ37 115 RFU 143

60 DQ24 88 DQ38 116 V

144

61 RFU 89 DQ39 117

145

62 RFU 90

118

146

63 RFU 91 DQ40 119

147

64 RFU 92 DQ41 120

148

65 DQ25 93 DQ42 121

149

66 *DQ26 94 DQ43 122 A11 150

67 DQ27 95 *DQ44 123 *A13 151

124 V

152

69 DQ28 97 DQ45 125 RFU 153

70 DQ29 98 DQ46 126

154

71 DQ30 99 DQ47 127 V

155

72 DQ31 100 DQ48 128 RFU 156

101 DQ49 129 *RAS3 157

74 DQ32 102 V

130 CAS5 158

75 DQ33 103 DQ50 131 CAS7 159

76 DQ34 104 DQ51 132 PDE 160

77 *DQ35 105 DQ52 133 V

161

106 *DQ53 134 RSVD 162

PD1 107 V

135 RSVD 163

PD3 108 RSVD 136 DQ54 164

PD5 109 RSVD 137 DQ55 165

PD7 110 V

138 V

166

ID0 111 RFU 139 DQ56 167

112 CAS1 140 DQ57 168

PIN NAMES

Pin Names

A0, B0, A1 - A11

A0, B0, A1 - A12

DQ0 - DQ71

W0, W2

OE0, OE2

RAS0, RAS2

CAS0 - CAS7

PDE

PD1 - 8

ID0 - 1

RSVD

RFU

Function

Address Input(4K ref.)

Address Input(8K ref.)

Data In/Out

Read/Write Enable

Output Enable

Row Address Strobe

Column Address Strobe

Power(+5V)

Ground

No Connection

Presence Detect Enable

Presence Detect

ID bit

Reserved Use

Reserved for Future Use

Pins marked

′

are not used in this module.

PD & ID Table

PD1

PD2

PD3

PD4

PD5

PD6

PD7

PD8

ID0

ID1

50NS

60NS

NOTE : A12 is used for only M364C1680BJ(T)0-C (8K Ref.)

PD Note :PD & ID Terminals must each be pulled up through a resistor to V

at the next higher

level assembly. PDs will be either open (NC) or driven to V

via on-board buffer circuits.

PD : 0 for Vol of Drive IC & 1 for N.C

ID Note : IDs will be either open (NC) or connected directly to V

without a buffer.

ID : 0 for Vss & 1 for N.C

DRAM MODULE

FUNCTIONAL BLOCK DIAGRAM

RAS0

OE0

CAS0

A1-A11(A12)

M364C160(8)0BJ(T)0-C

RAS2

OE2

CAS4

A1-A11(A12)

DQ0

DQ1

DQ2

DQ3

DQ0

DQ1

DQ2

DQ3

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

CAS5

DQ0

DQ1

DQ2

DQ3

DQ0

DQ1

DQ2

DQ3

DQ9

DQ10

DQ11

DQ12

DQ13

DQ14

DQ15

DQ16

CAS6

DQ0

DQ1

DQ2

DQ3

DQ0

DQ1

DQ2

DQ3

DQ18

DQ19

DQ20

DQ21

DQ22

DQ23

DQ24

DQ25

CAS7

DQ0

DQ1

DQ2

DQ3

DQ0

DQ1

DQ2

DQ3

DQ27

DQ28

DQ29

DQ30

DQ31

DQ32

DQ33

DQ34

DQ0

DQ1

DQ2

DQ3

DQ0

DQ1

DQ2

DQ3

DQ63

DQ64

DQ65

DQ66

DQ67

DQ68

DQ69

DQ70

DQ0

DQ1

DQ2

DQ3

DQ0

DQ1

DQ2

DQ3

DQ54

DQ55

DQ56

DQ57

DQ58

DQ59

DQ60

DQ61

DQ0

DQ1

DQ2

DQ3

DQ0

DQ1

DQ2

DQ3

DQ45

DQ46

DQ47

DQ48

DQ49

DQ50

DQ51

DQ52

DQ0

DQ1

DQ2

DQ3

DQ0

DQ1

DQ2

DQ3

DQ36

DQ37

DQ38

DQ39

DQ40

DQ41

DQ42

DQ43

CAS1

U10

U11

CAS2

U12

U13

CAS3

U14

U15

NOTE : A12 is used for only M364C1680BJ(T)0 (8K Ref.)

A1-A11(A12)

W0, OE0

W2, OE2

U0-U7

U8-U15

U0-U15

U0-U7

U8-U15

Vcc

Vss

0.1 or 0.22uF Capacitor

under each DRAM

To all DRAMs

DRAM MODULE

ABSOLUTE MAXIMUM RATINGS *

Item

Voltage on any pin relative V

Voltage on V

supply relative to V

Storage Temperature

Power Dissipation

Short Circuit Output Current

Symbol

, V

OUT

stg

M364C160(8)0BJ(T)0-C

Rating

-1 to +7.0

-55 to +125

Unit

°C

* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to

the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended

periods may affect device reliability.

RECOMMENDED OPERATING CONDITIONS

(Voltage referenced to V

, T

= 0 to 70°C)

Item

Supply Voltage

Ground

Input High Voltage

Input Low Voltage

Symbol

Min

4.5

2.4

-1.0

Typ

5.0

Max

5.5

CC*1

0.8

Unit

*1 : V

+2.0V at pulse width≤20ns, which is measured at V

*2 : -2.0V at pulse width≤20ns, which is measured at V

DC AND OPERATING CHARACTERISTICS

(Recommended operating conditions unless otherwise noted)

Symbol

CC1

CC2

CC3

CC4

CC5

CC6

I(L)

O(L)

Speed

-50

-60

Don′t care

-50

-60

-50

-60

Don′t care

-50

-60

Don′t care

M364C1600BJ(T)0

Min

M364C1680BJ(T)0

Min

-10

-5

2.4

Max

1440

1280

100

1440

1280

960

800

1920

1760

0.4

Max

1920

1760

100

1920

1760

1120

960

1920

1760

0.4

Unit

-10

-5

2.4

CC1

* : Operating Current * (RAS, CAS, Address cycling @

=min)

CC2

: Standby Current (RAS=CAS=W=V

)

CC3

* : RAS Only Refresh Current * (CAS=V

, RAS cycling @

=min)

CC4

* : Fast Page Mode Current * (RAS=V

, CAS cycling :

=min)

CC5

: Standby Current (RAS=CAS=W=Vcc-0.2V)

CC6

* : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @

=min)

IL)

: Input Leakage Current (Any input 0≤V

≤Vcc+0.5V,

all other pins not under test=0 V)

OL)

: Output Leakage Current(Data Out is disabled, 0V≤V

OUT

≤Vcc)

: Output High Voltage Level (I

= -5mA)

: Output Low Voltage Level (I

= 4.2mA)

* NOTE

: I

CC1

, I

CC3

, I

CC4

and I

CC6

are dependent on output loading and cycle rates. Specified values are obtained with the output open.

is specified as an average current. In I

CC1

and I

CC3

, address can be changed maximum once while RAS=V

. In I

CC4

address can be changed maximum once within one Fast page mode cycle time,

参数对比

与M364C1600BJ0-C50相近的元器件有：M364C1680BJ0-C60、M364C1600BT0-C60、M364C1600BJ0-C60、M364C1600BT0-C50、M364C1680BT0-C60、M364C1680BJ0-C50、M364C1680BT0-C50。描述及对比如下：

型号	M364C1600BJ0-C50	M364C1680BJ0-C60	M364C1600BT0-C60	M364C1600BJ0-C60	M364C1600BT0-C50	M364C1680BT0-C60	M364C1680BJ0-C50	M364C1680BT0-C50
描述	Fast Page DRAM Module, 16MX64, 50ns, CMOS, DIMM-168	Fast Page DRAM Module, 16MX64, 60ns, CMOS, DIMM-168	Fast Page DRAM Module, 16MX64, 60ns, CMOS, DIMM-168	Fast Page DRAM Module, 16MX64, 60ns, CMOS, DIMM-168	Fast Page DRAM Module, 16MX64, 50ns, CMOS, DIMM-168	Fast Page DRAM Module, 16MX64, 60ns, CMOS, DIMM-168	Fast Page DRAM Module, 16MX64, 50ns, CMOS, DIMM-168	Fast Page DRAM Module, 16MX64, 50ns, CMOS, DIMM-168
厂商名称	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)
零件包装代码	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
包装说明	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168
针数	168	168	168	168	168	168	168	168
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compli	compli
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	FAST PAGE	FAST PAGE	FAST PAGE	FAST PAGE	FAST PAGE	FAST PAGE	FAST PAGE	FAST PAGE
最长访问时间	50 ns	60 ns	60 ns	60 ns	50 ns	60 ns	50 ns	50 ns
其他特性	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
内存密度	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bi	1073741824 bi
内存集成电路类型	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE
内存宽度	64	64	64	64	64	64	64	64
功能数量	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1
端子数量	168	168	168	168	168	168	168	168
字数	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
字数代码	16000000	16000000	16000000	16000000	16000000	16000000	16000000	16000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	16MX64	16MX64	16MX64	16MX64	16MX64	16MX64	16MX64	16MX64
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装代码	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
封装等效代码	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
电源	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	4096	8192	4096	4096	4096	8192	8192	8192
最大待机电流	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A
最大压摆率	1.92 mA	1.76 mA	1.76 mA	1.76 mA	1.92 mA	1.76 mA	1.92 mA	1.92 mA
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL