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M38510/10107SPX

Operational Amplifier, 1 Func, 6000uV Offset-Max, CDIP8, CERAMIC, DIP-8

器件类别:模拟混合信号IC    放大器电路   

厂商名称:Linfinity Microelectronics

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器件参数
参数名称
属性值
厂商名称
Linfinity Microelectronics
包装说明
DIP,
Reach Compliance Code
unknown
放大器类型
OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB)
0.4 µA
最大输入失调电压
6000 µV
JESD-30 代码
R-CDIP-T8
负供电电压上限
-22 V
标称负供电电压 (Vsup)
-10 V
功能数量
1
端子数量
8
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装代码
DIP
封装形状
RECTANGULAR
封装形式
IN-LINE
认证状态
Not Qualified
供电电压上限
22 V
标称供电电压 (Vsup)
10 V
表面贴装
NO
温度等级
MILITARY
端子形式
THROUGH-HOLE
端子位置
DUAL
文档预览
INCH-POUND
MIL-M-38510/101J
07 February 2003
SUPERSEDING
MIL-M-38510/101H
30 October 2001
MILITARY SPECIFICATION
MICROCIRCUITS, LINEAR, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This specification is approved for use by all Departments and Agencies of the Department of Defense.
Inactive for new design after 13 July 1995.
1. SCOPE
1.1 Scope. This specification covers the detail requirements for monolithic silicon, operational amplifiers. Two product
assurance classes and a choice of case outlines and lead finish are provided for each type and are reflected in the complete
part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.3).
1.2 Part number. The complete part number shall be in accordance with MIL-PRF-38535, and as specified herein..
1.2.1 Device types. The device types shall be as shown in the following:
Device type
01
02
03
04
05
06
07
08
Circuit
Single operational amplifier - internally compensated
Dual operational amplifier - internally compensated
Single operational amplifier - externally compensated
Single operational amplifier - externally compensated
Dual operational amplifier - externally compensated 1/
Dual operational amplifier - externally compensated 1/
Single operational amplifier, high speed
Dual operational amplifier - internally compensated
1.2.2 Device class. The device class shall be the product assurance level as defined in MIL-PRF-38535.
______
1/ Device types 05 and 06 may be monolithic, or they may consist of two separate, independent die.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be use
in improving this document should be addressed to: Commander, Defense Supply Center Columbus,
ATTN: DSCC-VAS, 3990 East Broad St., Columbus, OH 43216-5000, by using the Standardization
Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5962
MIL-M-38510/101J
1.2.3 Case outlines. The case outlines shall be designated in MIL-STD-1835 and as follows:
Outline letter
A 2/
B 2/
C
D
E
F
G
H
I
P
Z
2
Descriptive designator
GDFP5-F14 or CDFP6-F14
GDFP4-14
GDIP1-T14 or CDIP2-T14
GDFP1-F14 or CDFP2-F14
GDIP1-T16 or CDIP2-T16
GDFP2-F16 or CDFP3-F16
MACY1-X8
GDFP1-F10 or CDFP2-F10
MACY1-X10
GDIP1-T8 or CDIP2-T8
GDFP1-G10
CQCC1-N20
Terminals
14
14
14
14
16
16
8
10
10
8
10
20
Package style
Flat pack
Flat pack
Dual-in-line
Flat pack
Dual-in-line
Flat pack
Can
Flat pack
Can
Dual-in-line
Flat pack with gullwing leads
Square leadless chip carrier
1.3 Absolute maximum ratings.
Supply voltage range (V
CC
).............................................................................
±22
V dc 3/
Input voltage range .........................................................................................
±20
V dc 4/
Differential input voltage range .......................................................................
±30
V dc 5/
Input current range ......................................................................................... -0.1 mA to +10 mA
Storage temperature range ............................................................................. -65°C to +150°C
Output short-circuit duration ............................................................................ Unlimited 6/
Lead temperature (soldering, 60 seconds) ..................................................... +300°C
Junction temperature (T
J
) ............................................................................... +175°C 7/
1.4 Recommended operating conditions.
Supply voltage (V
CC
) ......................................................................................
±5
V dc to
±20
V dc
Ambient temperature range (T
A
) .................................................................... -55°C to +125°C
______
2/ Inactive package case outline.
3/ Voltages in excess of these may be applied for short-term tests if voltage difference does not exceed 44 volts.
4/ For supply voltages less than
±20
V dc, the absolute maximum input voltage is equal to the supply voltage.
5/ For device types 04, 06, and 07 only, this rating is
±1.0
V unless resistances of 2 kΩ or greater are inserted in
series with the inputs to limit current in the input shunt diodes to the maximum allowable value.
6/ Short circuit may be to ground or either supply. Rating applies to +125°C case temperature or +75°C
ambient temperature.
7/ For short term test (in the specific burn-in and life test configuration when required and up to 168 hours
maximum) T
J
= +275°C.
2
MIL-M-38510/101J
1.5 Power and thermal characteristics.
Case outlines
A,B,D
C,E,P
G
I
H
F
Z
2
Maximum allowable power
dissipation
350 mW at T
A
= +125°C
400 mW at T
A
= +125°C
330 mW at T
A
= +125°C
350 mW at T
A
= +125°C
330 mW at T
A
= +125°C
400 mW at T
A
= +125°C
330 mW at T
A
= +125°C
8/ at T
A
= +125°C
Maximum
Maximum
θ
JC
60°C/W
35°C/W
40°C/W
40°C/W
60°C/W
35°C/W
21°C/W
60°C/W
θ
JA
140°C/W
120°C/W
150°C/W
140°C/W
150°C/W
120°C/W
225°C/W still air
142°C/W 500 LFPM
120°C/W
2. APPLICABLE DOCUMENTS
2.1 Government documents.
2.1.1 Specifications, standards, and handbooks. The following specifications and standards form a part of this
specification to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-38535
- Integrated Circuits (Microcircuits) Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883
MIL-STD-1835
- Test Method Standard for Microelectronics.
- Interface Standard Electronic Component Outlines.
(Copies of these documents are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building
4D, Philadelphia, PA 19111-5094 or http://astimage.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil.)
2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein
the text of this document shall takes precedence. Nothing in this document, however, supersedes applicable laws and
regulations unless a specific exemption has been obtained.
______
8/ P
D
= 102 mW for device type 01. P
D
= 75 mW for device type 03. P
D
= 149 mW for device type 04.
3
MIL-M-38510/101J
3. REQUIREMENTS
3.1 Qualification. Microcircuits furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract
award (see 4.3 and 6.4).
3.2 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535 and as specified
herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall
not affect the form, fit, or function as described herein.
3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as
specified in MIL-PRF-38535 and herein.
3.3.1 Terminal connections. The terminal connections shall be as specified on figure 1.
3.3.2 Schematic circuits. The schematic circuits shall be maintained by the manufacturer and made available to the
qualifying activity and the preparing activity (DSCC-VAS) upon request.
3.3.3 Case outlines. The case outlines shall be as specified in 1.2.3.
3.4 Lead material and finish. Lead material and finish shall be in accordance with MIL-PRF-38535 (see 6.6).
3.5 Electrical performance characteristics. The following electrical performance characteristics apply over the full
operating ambient temperature range of -55°C to +125°C and for supply voltages
±5
V dc to
±20
V dc, unless otherwise
specified (see table I).
3.5.1 Offset null circuits. Each amplifier having nulling inputs (device types 01, 02, 03, 05, and 07) shall be capable of
being nulled 1 mV beyond the specified offset voltage limits for -55°C
T
A
+125°C using the circuits of figure 2.
3.5.2 Frequency compensation. Device types 01, 02, 07, and 08 shall be free of oscillation when operated in a unity gain
non-inverting mode with no external compensation and a source resistance of
10 kΩ, and when operated in any test
condition specified herein. Device types 03, 04, 05, and 06 shall be free from oscillation when compensated with a 30 pF
capacitor for all gain configurations or a 3 pF capacitor when used with a gain of 10.
3.6 Rebonding. Rebonding shall be in accordance with MIL-PRF-38535.
3.7 Electrical test requirements. Electrical test requirements for each device class shall be the subgroups specified in
table II. The electrical tests for each subgroup are described in table III.
3.8 Marking. Marking shall be in accordance with MIL-PRF-38535.
3.9 Microcircuit group assignment. The devices covered by this specification shall be in microcircuit group number 49
(see MIL-PRF-38535, appendix A).
4
MIL-M-38510/101J
TABLE I. Electrical performance characteristics. 1/
Conditions
-55°C
T
A
+125°C
see figure 3
unless otherwise specified
Input offset voltage
V
IO
R
S
= 50
2/
1
01,02,
08
03,05
04,06
07
2,3
01,02,
08
03,05
04,06
07
Input offset voltage
temperature sensitivity
∆V
IO
/
∆T
2
01,02,
08
03,05
04,06
07
3
01,02,
03,05
04,06
07
08
Test
Symbol
Group A
subgroups
Device
type
Min
-3
-2
-0.5
-4
-4
-3
-1
-6
-15
Limits
Max
+3
+2
+0.5
+4
+4
+3
+1
+6
+15
Unit
mV
µV/°C
-18
-5
-50
-15
-5
-50
-20
+18
+5
+50
+15
+5
+50
20
See footnotes at end of table.
5
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