INCH-POUND
MIL-M-38510/114B
20 August 2003
SUPERSEDING
MIL-M-38510/114A
09 November 1979
MILITARY SPECIFICATION
MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
Reactivated after 20 August 2003 and may be used for either new or existing design acquisitions.
This specification is approved for use by all Departments and Agencies of the Department of Defense.
The requirements for acquiring the product herein shall consist of this specification sheet and MIL-PRF-38535.
1. SCOPE
1.1 Scope. This specification covers the detail requirements for monolithic silicon, BI-FET operational amplifier
microcircuit. Two product assurance classes and a choice of case outlines and lead finishes are provided and are
reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by
MIL-PRF-38535, (see 6.3)
1.2 Part number. The part number should be in accordance with MIL-PRF-38535, and as specified herein.
1.2.1 Device types. The device types are internally compensated and should be as follows:
Device type
01
02
03
04
05
06
Circuit
Operational amplifier, JFET input, low power
Operational amplifier, JFET input, wide band
Operational amplifier, JFET input, wide band, undercompensated
Operational amplifier, JFET input, low power, low offset
Operational amplifier, JFET input, wide band, low offset
Operational amplifier, JFET input, wide band, under compensated, low offset
1.2.2 Device class. The device class should be the product assurance level as defined in MIL-PRF-38535.
1.2.3 Case outline. The case outline should be as designated in MIL-STD-1835 and as follows:
Outline letter
G
H
P
Descriptive designator
MACY1-X8
GDFP1-F10 or CDFP2-F10
GDIP1-T8 or CDIP2-T8
Terminals
8
10
8
Package style
Can
Flat pack
Dual-in-line
Comments, suggestions, or questions on this document should be addressed to: Commander, Defense
Supply Center Columbus, ATTN: DSCC-VAS, 3990 East Broad St., Columbus, OH 43216-5000, or emailed
to linear@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at www.dodssp.daps.mil.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5962
MIL-M-38510/114B
1.3 Absolute maximum ratings.
Supply voltage range .......................................................................
Input voltage range ..........................................................................
Differential input voltage range .........................................................
Storage temperature range ..............................................................
Output short-circuit duration .............................................................
Lead temperature (soldering, 60 seconds) ......................................
Junction temperature (T
J
) ................................................................
1.4 Recommended operating conditions.
Supply voltage range .......................................................................
±5
V dc to
±20
V dc
Ambient operating temperature range (T
A
) ...................................... -55°C to +125°C
1.5
Power and thermal characteristics.
Case outlines
G
H
P
Maximum allowable power
dissipation
330 mW at T
A
= +125°C
330 mW at T
A
= +125°C
400 mW at T
A
= +125°C
Maximum
Maximum
±22
V
±20
V 1/
±40
V
-65°C to +150°C
Unlimited 2/
+300°C.
+175°C 3/
θ
JC
40°C/W
60°C/W
35°C/W
θ
JA
150°C/W
150°C/W
120°C/W
2. APPLICABLE DOCUMENTS
2.1 Government documents.
2.1.1 Specifications, standards, and handbooks. The following specifications and standards form a part of this
specification to the extent specified herein. Unless otherwise specified, the issues of these documents are those
listed in the issue of the Departments of Defense Index of Specifications and Standards (DODISS) and supplement
thereto, cited in the solicitation.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-38535
- Integrated Circuits (Microcircuits) Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883
MIL-STD-1835
- Test Method Standard for Microelectronics.
- Interface Standard Electronic Component Case Outlines.
(Copies of these documents are available from the Standardization Document Order Desk, 700 Robbins Avenue,
Building 4D, Philadelphia, PA 19111-5094.
2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited
herein the text of this document shall takes precedence. Nothing in this document, however, supersedes applicable
laws and regulations unless a specific exemption has been obtained.
______
1/ The absolute maximum negative input voltage is equal to the negative power supply voltage.
2/ Short circuit may be to ground or either supply. Rating applies to +125°C case temperature or +75°C
ambient temperature.
3/ For short term test (in the specific burn-in and life test configuration when required and up to 168 hours
maximum), T
J
= 275°C.
2
MIL-M-38510/114B
3. REQUIREMENTS
3.1 Qualification. Microcircuits furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before
contract award (see 4.3 and 6.4).
3.2 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535 and as
specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the
QM plan shall not affect the form, fit, or function as described herein.
3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as
specified in MIL-PRF-38535 and herein.
3.3.1 Terminal connections. The terminal connections shall be as specified on figure 1.
3.3.2 Schematic circuits. The schematic circuits shall be maintained by the manufacturer and made available to
the qualifying activity and the preparing activity (DSCC-VA) upon request.
3.3.3 Case outlines. The case outlines shall be as specified in 1.2.3.
3.4 Lead material and finish. The lead material and finish shall be in accordance with MIL-PRF-38535 (see 6.6).
3.5 Electrical performance characteristics. The electrical performance characteristics are as specified in table I,
and apply over the full recommended ambient operating temperature range, unless otherwise specified.
3.5.1 Offset null circuits. The nulling inputs shall be capable of being nulled 1 mV beyond the specified offset
voltage limits for –55°C
≤
T
A
≤
125°C using the circuit of figure 2.
3.5.2 Instability oscillations. The devices shall be free of oscillations when operated in the test circuits
of this specification.
3.6 Rebonding. Rebonding shall be in accordance with MIL-PRF-38535.
3.7 Electrical test requirements. Electrical test requirements for each device class shall be the subgroups
specified in table II. The electrical tests for each subgroup are described in table III.
3.8 Marking. Marking shall be in accordance with MIL-PRF-38535.
3.9 Microcircuit group assignment. The devices covered by this specification shall be in microcircuit group
number 49 (see MIL-PRF-38535, appendix A).
3
MIL-M-38510/114B
TABLE I. Electrical performance characteristics.
Conditions
-55°C
≤
T
A
≤
+125°C
unless otherwise specified
See figure 3
±V
CC
=
±5
V, V
CM
= 0 V
Test
Symbol
Group A
subgroups
1
Device
type
01,02,
03
04,05,
06
Min
-5
-2
-7
-2.5
-30
Limits
Max
5
2
7
2.5
30
Unit
Input offset voltage
V
IO
mV
±V
CC
=
±20
V,
V
CM
=
±15
V, 0 V
Input offset voltage
temperature sensitivity
∆V
IO
/
∆T
±V
CC =
±20
V, V
CM
= 0 V
2,3
01,02,
03
04,05,
06
1,2,3
01,02,
03
04,05,
06
µV/°C
-10
-20
-20
10
20
20
3500
60
300
50
100
50
pA
nA
pA
nA
pA
nA
pA
nA
Input offset current
I
IO
±V
CC =
±20
V, V
CM
= 0 V
T
J
= +25°C
T
J
=
+125°C
All
Input bias current
1/ 2/
+I
IB
±V
CC =
±20
V,
V
CM
= +15 V, t
≤
25 ms
T
J
= +25°C
T
J
=
+125°C
T
J
= +25°C
T
J
=
+125°C
T
J
= +25°C
T
J
=
+125°C
1,2,3
All
-100
-10
-100
-10
-100
-10
-I
IB
3/
±V
CC =
±15
V,
V
CM
= +10 V, t
≤
25 ms
±V
CC =
±20
V,
-15 V
≤
V
CM
≤
0 V,
t
≤
25 ms
Power supply rejection
ratio
+PSRR
-PSRR
+V
CC
= 10 V, -V
CC
= -20 V
+V
CC
= 20 V, -V
CC
= -10 V
±V
CC
=
±20
V,
V
IN
=
±15
V
±V
CC
=
±20
V
All
85
85
dB
Input voltage common
mode rejection
Adjustment for input
offset voltage
4/
CMR
1,2,3
All
85
dB
V
IO
ADJ(+)
V
IO
ADJ(-)
1,2,3
All
+8
-8
mV
Output short circuit
current (for positive
output)
5/
I
OS(+)
±V
CC
=
±15
V, t
≤
25 ms,
(short circuit to ground)
1,2,3
All
-50
mA
See footnotes at end of table.
4
MIL-M-38510/114B
TABLE I. Electrical performance characteristics – Continued.
Conditions
-55°C
≤
T
A
≤
+125°C
unless otherwise specified
See figure 3
±V
CC
=
±15
V, t
≤
25 ms,
(short circuit to ground)
I
CC
±V
CC
=
±15
V
1,2
01,04
02,03,
05,06
3
01,04
02,03,
05,06
Output voltage swing
(maximum)
V
OP
±V
CC
=
±20
V, R
L
= 10 kΩ
±V
CC
=
±20
V, R
L
= 2 kΩ
Open loop voltage
gain (single ended)
6/
A
VS(+)
A
VS(-)
Open loop voltage
gain (single ended)
Transient response,
rise time
6/
A
VS
±V
CC
=
±20
V, R
L
= 2 kΩ,
V
OUT
=
±15
V
±V
CC
=
±5
V, R
L
= 2 kΩ,
V
OUT
=
±2
V
TR
(tr)
±V
CC
=
±15
V, R
L
= 2 kΩ,
C
L
= 100 pF, V
IN
= 50 mV,
AV = 1, see figure 4
±V
CC
=
±15
V, R
L
= 2 kΩ,
C
L
= 100 pF, V
IN
= 50 mV,
AV = 5, see figure 4
Transient response,
overshoot
TR
(os)
±V
CC
=
±15
V, R
L
= 2 kΩ,
C
L
= 100 pF, V
IN
= 50 mV,
AV = 1, see figure 4
±V
CC
=
±15
V, R
L
= 2 kΩ,
C
L
= 100 pF, V
IN
= 50 mV,
AV = 5, see figure 4
See footnotes at end of table.
03,06
25
01,02,
04,05
40
%
4,5,6
01,04
02,05
03,06
150
100
450
ns
1
2,3
1
All
All
1,2,3
All
±16
±15
50
25
10
V/mV
V/mV
4
7
6
11
V
mA
Test
Symbol
Group A
subgroups
1,2,3
Device
type
Min
All
Limits
Max
50
Unit
Output short circuit
current (for negative
output)
Supply current
5/
I
OS(-)
mA
5
嵌入式系统
