M390S0823FT1
M390S0823FT1 SDRAM DIMM
PC133 Registered DIMM
8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD
GENERAL DESCRIPTION
The Samsung M390S0823FT1 is a 8M bit x 72 Synchronous
Dynamic RAM high density memory module. The Samsung
M390S0823FT1 consists of nine CMOS 8Mx8 bit Synchronous
DRAMs in TSOP-II 400mil packages, two 18-bits Drive ICs for
input control signal, one PLL in 24-pin TSSOP package for
clock and one 2K EEPROM in 8-pin TSSOP package for Serial
Presence Detect on a 168pin glass-epoxy substrate. Two
0.22uF and one 0.0022uF decoupling capacitors are mounted
on the printed circuit board in parallel for each SDRAM. The
M390S0823FT1 is a Dual In-line Memory Module and is
intented for mounting into 168-pin edge connector sockets.
Synchronous design allows precise cycle control with the use
of system clock. I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable latencies
allows the same device to be useful for a variety of high band-
width, high performance memory system applications.
FEATURE
• Performance range
Part No.
M390S0823FT1-C7A
•
•
•
•
•
Max Freq. (Speed)
133MHz (7.5ns @ CL=3)
Burst mode operation
Auto & self refresh capability (4096 Cycles/64ms)
LVTTL compatible inputs and outputs
Single 3.3V
±
0.3V power supply
MRS cycle with address key programs
Latency (Access from column address)
Burst length (1, 2, 4, 8 & Full page)
Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the
system clock
• Serial presence detect with EEPROM
• PCB :
Height (1,500mil),
double sided component
PIN CONFIGURATIONS (Front side/back side)
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
Front
V
SS
DQ0
DQ1
DQ2
DQ3
V
DD
DQ4
DQ5
DQ6
DQ7
DQ8
V
SS
DQ9
DQ10
DQ11
DQ12
DQ13
V
DD
DQ14
DQ15
CB0
CB1
V
SS
NC
NC
V
DD
WE
DQM0
Pin
Front
Pin
Front
DQ18
DQ19
V
DD
DQ20
NC
*V
REF
*CKE1
V
SS
DQ21
DQ22
DQ23
V
SS
DQ24
DQ25
DQ26
DQ27
V
DD
DQ28
DQ29
DQ30
DQ31
V
SS
*CLK2
NC
NC
**SDA
**SCL
V
DD
Pin
Back
Pin
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
Back
DQM5
*CS1
RAS
V
SS
A1
A3
A5
A7
A9
BA0
A11
V
DD
*CLK1
*A12
V
SS
CKE0
*CS3
DQM6
DQM7
*A13
V
DD
NC
NC
CB6
CB7
V
SS
DQ48
DQ49
Pin
Back
29 DQM1 57
58
CS0
30
59
31
DU
60
32
V
SS
61
33
A0
62
34
A2
63
35
A4
64
36
A6
65
37
A8
38 A10/AP 66
67
39
BA1
68
40
V
DD
69
41
V
DD
42 CLK0 70
71
43
V
SS
44
DU
72
73
45
CS2
46 DQM2 74
47 DQM3 75
76
48
DU
77
49
V
DD
78
50
NC
79
51
NC
80
52
CB2
81
53
CB3
82
54
V
SS
55 DQ16 83
56 DQ17 84
V
SS
85
86 DQ32
87 DQ33
88 DQ34
89 DQ35
90
V
DD
91 DQ36
92 DQ37
93 DQ38
94 DQ39
95 DQ40
V
SS
96
97 DQ41
98 DQ42
99 DQ43
100 DQ44
101 DQ45
102 V
DD
103 DQ46
104 DQ47
105 CB4
106 CB5
V
SS
107
108
NC
NC
109
110 V
DD
111 CAS
112 DQM4
141 DQ50
142 DQ51
143 V
DD
144 DQ52
NC
145
146 *V
REF
147 REGE
V
SS
148
149 DQ53
150 DQ54
151 DQ55
152
V
SS
153 DQ56
154 DQ57
155 DQ58
156 DQ59
157 V
DD
158 DQ60
159 DQ61
160 DQ62
161 DQ63
V
SS
162
163 *CLK3
NC
164
165 **SA0
166 **SA1
167 **SA2
168 V
DD
PIN NAMES
Pin Name
A0 ~ A11
BA0 ~ BA1
DQ0 ~ DQ63
CB0 ~ CB7
CLK0
CKE0
CS0, CS2
RAS
CAS
WE
DQM0 ~ 7
V
DD
V
SS
*V
REF
REGE
SDA
SCL
SA0 ~ 2
DU
NC
Function
Address input (Multiplexed)
Select bank
Data input/output
Check bit (Data-in/data-out)
Clock input
Clock enable input
Chip select input
Row address strobe
Colume address strobe
Write enable
DQM
Power supply (3.3V)
Ground
Power supply for reference
Register enable
Serial data I/O
Serial clock
Address in EEPROM
Don′t use
No connection
* These pins are not used in this module.
**
These pins should be NC in the system
which does not support SPD.
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Rev.0.1 Sept. 2001
M390S0823FT1
PIN CONFIGURATION DESCRIPTION
Pin
CLK
CS
Name
System clock
Chip select
PC133 Registered DIMM
Input Function
Active on the positive going edge to sample all inputs.
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
CKE should be enabled 1CLK+tss prior to valid command.
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA11, Column address : CA0 ~ CA8
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
Makes data output Hi-Z, t
SHZ
after the clock and masks the output.
Blocks data input when DQM active. (Byte masking)
The device operates in the transparent mode when REGE is low. When REGE is high,
the device operates in the registered mode. In registered mode, the Address and con-
trol inputs are latched if CLK is held at a high or low logic level. the inputs are stored in
the latch/flip-flop on the rising edge of CLK. REGE is tied to V
DD
through 10K ohm
Resistor on PCB. So if REGE of module is floating, this module will be operated as reg-
istered mode.
Data inputs/outputs are multiplexed on the same pins.
Check bits for ECC.
Power and ground for the input buffers and the core logic.
CKE
Clock enable
A0 ~ A11
BA0 ~ BA1
RAS
CAS
WE
DQM0 ~ 7
Address
Bank select address
Row address strobe
Column address strobe
Write enable
Data input/output mask
REGE
Register enable
DQ0 ~ 63
CB0 ~ 7
V
DD
/V
SS
Data input/output
Check bit
Power supply/ground
Rev.0.1 Sept. 2001
M390S0823FT1
FUNCTIONAL BLOCK DIAGRAM
PCLK0
BCS0
BCKE0
B
0
A0~B
0
A11,BBA0~1,BRAS,BCAS,BWE
BDQM0
DQ0~7
10Ω
PC133 Registered DIMM
•
•
•
CLK
CS
CKE
Add,CTL
DQM
DQ0~7
CLK
CS
CKE
Add,CTL
DQM
DQ0~7
CLK
CS
CKE
Add,CTL
DQM
DQ0~7
CLK
CS
CKE
Add,CTL
DQM
DQ0~7
D0
•
•
DQ8~15
10Ω
PCLK1
•
D1
•
•
•
•
•
•
D2
BDQM1
CB0~7
10Ω
BCS2
•
D3
BDQM2
DQ16~23
10Ω
PCLK3
•
•
•
BDQM3
DQ24~31
10Ω
CLK
CS
CKE
Add,CTL
DQM
DQ0~7
CLK
CS
CKE
Add,CTL
DQM
DQ0~7
D4
•
BDQM4
DQ32~39
10Ω
•
D5
•
BDQM5
DQ40~47
10Ω
CLK
CS
CKE
Add,CTL
DQM
DQ0~7
CLK
CS
CKE
Add,CTL
DQM
DQ0~7
CLK
CS
CKE
Add,CTL
DQM
DQ0~7
D6
•
•
•
D7
BDQM6
DQ48~55
10Ω
D8
BDQM7
DQ56~63
10Ω
Notes :
Address/Control Signals are connected to D2 through 100 ohms resistor.
V
SS
V
DD
A0~A9
RAS,CAS,WE
DQM0,1,4,5
CS0
REGE
PCLK2
10kΩ
Cb
*1
2G
AGND
1G
AVCL
74ALVCF162835
B
0
A0~B
0
A9
CLK1,2,3
BRAS,BCAS,BWE
BDQM0,1,4,5
BCS0
10Ω
12pF
CDCF2509
10Ω
CLK0
LE
OE
12pF
CLK
FIBIN
1Y0
1Y1
1Y2
1Y3
1Y4
2Y0
2Y1
2Y2
2Y3
PCLK0
PCLK1
PCLK2
PCLK3
FBOUT
V
DD
A10,A11,BA0~1
CS2
CKE0
DQM2,3,6,7
74ALVCF162835
B
0
A10,B
0
A11,BBA0~1
BCS2
BCKE0
BDQM2,3,6,7
Note
1. The actual values of
Cb
will depend upon the PLL chosen.
Serial PD
SCL
47KΩ
WP
A0
SDA
A1
A2
LE
OE
SA0 SA1 SA2
Rev.0.1 Sept. 2001
M390S0823FT1
PC133 Registered DIMM
STANDARD TIMING DIAGRAM WITH PLL & REGISTER (CL=2, BL=4)
*2
*1
Control Signal(RAS,CAS,WE)
REG
*3
D
OUT
*1. Register Input
0
CLK
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
RAS
CAS
WE
*2. Register Output
RAS
td
tr
td
tr
CAS
WE
*3. SDRAM
CAS latency(refer to *1)
=2CLK+1CLK
tSAC
tRAC(refer to *1)
1CLK
DQ
tRAC(refer to *2)
Qa0
Qa1
Qa2
Qa3
Db0
Db1
Db2
Db3
CAS latency(refer to *2)
=2CLK
tRDL
Row Active
Read
Command
Precharge
Command
Row Active
Write
Command
Precharge
Command
td, tr = Delay of register (74ALVCF162835)
Notes :
1. In case of module timing, command cycles delayed 1CLK with respect to external input timing at the address and input signal
because of the buffering in register (74ALVCF162835). Therefore, Input/Output signals of read/write function should be
issued 1CLK earlier as compared to Unbuffered DIMMs.
2. D
IN
is to be issued 1clock after write command in external timing because D
IN
is issued directly to module.
: Don
′t
care
Rev.0.1 Sept. 2001
M390S0823FT1
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on V
DD
supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
V
IN
, V
OUT
V
DD
, V
DDQ
T
STG
P
D
I
OS
PC133 Registered DIMM
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
9
50
Unit
V
V
°C
W
mA
Note :
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended Operating Conditions (Voltage Referenced to V
SS
= 0V, T
A
= 0 to 70°C)
Parameter
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Symbol
V
DD
V
IH
V
IL
V
OH
V
OL
I
LI
Min
3.0
2.0
-0.3
2.4
-
-10
Typ
3.3
3.0
0
-
-
-
Max
3.6
V
DDQ
+0.3
0.8
-
0.4
10
Unit
V
V
V
V
V
uA
1
2
I
OH
= -2mA
I
OL
= 2mA
3
Note
Notes :
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
(V
DD
= 3.3V, T
A
= 23°C, f = 1MHz, V
REF
=1.4V
±
200 mV)
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
IN7
C
OUT
C
OUT1
Min
-
-
-
-
-
-
-
-
-
Max
15
15
15
23
15
15
15
16
16
Unit
pF
pF
pF
pF
pF
pF
pF
pF
pF
Parameter
Input capacitance (A
0
~ A
11
)
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0)
Input capacitance (CLK0)
Input capacitance (CS0, CS2)
Input capacitance (DQM0 ~ DQM7)
Input capacitance (BA0 ~ BA1)
Data input/output capacitance (DQ0 ~ DQ63)
Data input/output capacitance (CB0 ~ CB7)
Rev.0.1 Sept. 2001
