DRAM MODULE
M466F0803BT2-L
8Byte 8Mx64 SODIMM
(8Mx8 base)
Revision 0.1
June 1998
DRAM MODULE
Revision History
Version 0.0 (Sept. 1997)
M466F0803BT2-L
• Removed two AC parameters t
CACP
(access time from CAS) and t
AAP
(access time from col. addr.) in
AC CHARACTERISTICS.
Version 0.1 (June 1998)
• The 3rd. generation of 64M DRAM components are applied for this module.
DRAM MODULE
M466F0803BT2-L
M466F0803BT2-L EDO Mode
8M x 64 DRAM SODIMM Using 8MX8, 4K Refresh 3.3V, Low power/Self-Refresh
GENERAL DESCRIPTION
The Samsung M466F0803BT2-L is a 8Mx64bits Dynamic
RAM
high
density
memory
module.
The
Samsung
8-pin
M466F0803BT2-L consists of eight CMOS 8MX8bits DRAMs
in TSOP 400mil packages and a 2K EEPROM in
TSSOP package mounted on a 144-pin glass-epoxy sub-
strate. A 0.1uF decoupling capacitor is mounted on the
printed circuit board for each DRAM. The M466F0803BT2-L is
a Small Out-line Dual in-line Memory Module and is intended
for mounting into 144 pin edge connector sockets.
FEATURES
• Part Identification
- M466F0803BT2-L(4096 cycles/128ms, TSOP, L-ver)
• Extended Data Out Mode Operation
• New JEDEC standard proposal with EEPROM
• Serial Presense Detect with EEPROM
• CAS-before-RAS Refresh capability
• Self -refresh capability
• RAS-only and Hidden refresh capability
• LVTTL compatible inputs and outputs
• Single +3.3V±0.3V power supply
• PCB : Height(1100mil), double sided component
PERFORMANCE RANGE
Speed
-50
-60
t
RAC
50ns
60ns
t
CAC
13ns
15ns
t
RC
84ns
104ns
t
HPC
20ns
25ns
PIN CONFIGURATIONS
Pin
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
Front Pin
V
SS
DQ0
DQ1
DQ2
DQ3
V
CC
DQ4
DQ5
DQ6
DQ7
V
SS
CAS0
CAS1
V
CC
A0
A1
A2
V
SS
DQ8
DQ9
DQ10
DQ11
V
CC
DQ12
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
Back
V
SS
DQ32
DQ33
DQ34
DQ35
V
CC
DQ36
DQ37
DQ38
DQ39
V
SS
CAS4
CAS5
V
CC
A3
A4
A5
V
SS
DQ40
DQ41
DQ42
DQ43
V
CC
DQ44
Pin
49
51
53
55
57
59
61
63
65
67
69
71
73
75
77
79
81
83
85
87
89
91
93
95
Front
DQ13
DQ14
DQ15
V
SS
RSVD
RSVD
RFU
V
CC
RFU
W
RAS0
NC
OE
V
SS
RSVD
RSVD
V
CC
DQ16
DQ17
DQ18
DQ19
V
SS
DQ20
DQ21
Pin
50
52
54
56
58
60
62
64
66
68
70
72
74
76
78
80
82
84
86
88
90
92
94
96
Back
DQ45
DQ46
DQ47
V
SS
RSVD
RSVD
RFU
V
CC
RFU
RFU
RFU
RFU
RFU
V
SS
RSVD
RSVD
V
CC
DQ48
DQ49
DQ50
DQ51
V
SS
DQ52
DQ53
Pin
97
99
101
103
105
107
109
111
113
115
117
119
121
123
125
127
129
131
133
135
137
139
141
143
Front Pin
DQ22
DQ23
V
CC
A6
A8
V
SS
A9
A10
V
CC
CAS2
CAS3
V
SS
DQ24
DQ25
DQ26
DQ27
V
CC
DQ28
DQ29
DQ30
DQ31
V
SS
SDA
V
CC
98
100
102
104
106
108
110
112
114
116
118
120
122
124
126
128
130
132
134
136
138
140
142
144
Back
DQ54
DQ55
V
CC
A7
A11
V
SS
NC
NC
V
CC
CAS6
CAS7
Vss
DQ56
DQ57
DQ58
DQ59
V
CC
DQ60
DQ61
DQ62
DQ63
Vss
SCL
V
CC
PIN NAMES
Pin Name
A0 to A11
DQ0 - DQ63
W
OE
RAS0
CAS0 - CAS7
V
CC
V
SS
NC
SDA
SCL
RSVD
RFU
Function
Address Inputs
Data In/Out
Read/Write Enable
Output Enable
Row Address Strobe
Column Address Strobe
Power(+3.3V)
Ground
No Connection
Serial Address / Data I/O
Serial Clock
Reserved Use
Reserved for Future Use
DRAM MODULE
FUNCTIONAL BLOCK DIAGRAM
RAS0
W
OE
A0~A11
CAS0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CAS5
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
CAS6
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
CAS7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
M466F0803BT2-L
CAS4
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
U0
U4
CAS1
U1
U5
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
CAS2
U2
U6
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
CAS3
U3
U7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
Serial PD
V
CC
0.1uF Capacitor
for each DRAM
Vss
Vss
To all DRAMs
SCL
A0
A1
A2
SDA
DRAM MODULE
ABSOLUTE MAXIMUM RATINGS *
Item
Voltage on any pin relative V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
D
I
OS
Rating
-0.5 to +4.6
-0.5 to +4.6
-55 to +125
8
50
M466F0803BT2-L
Unit
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70°C)
Item
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3
*2
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3
*1
0.8
Unit
V
V
V
V
*1: V
CC
+1.3V at pulse width≤15ns, which is measured at V
CC
.
*2 : -1.3V at pulse width≤15ns, which is measured at V
SS
.
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
Symbol
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
CC7
I
CCS
I
I(L)
I
O(L)
V
OH
V
OL
Speed
-50
-60
Don′t care
-50
-60
-50
-60
Don′t care
-50
-60
Don′t care
Don′t care
Don′t care
M466F0803BT2-L
Min
-
-
-
-
-
-
-
-
-
-
-
-
-10
-5
2.4
-
Max
960
880
16
960
880
880
800
2.4
960
880
3.2
3.2
10
5
-
0.4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
I
CC1
: Operating Current * (RAS, CAS, Address cycling @t
RC
=min)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
: RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
I
CC4
: Extended Data Out Mode Current * (RAS=V
IL
, CAS cycling : t
HPC
=min)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
I
CC7
: Battery back-up current. Average power supply, Battery back-up mode.
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, CAS=0.2V,
DQ=Don't care,
t
RC
=31.25us,
t
RAS
=
t
RAS
min~300ns
I
CCS
: Self Refresh Current, RAS=CAS=V
IL
, W=OE=A0~A11=V
CC
-0.2V or 0.2V, DQ~DQ63=V
CC
-0.2V or Open
I
(IL)
: Input Leakage Current (Any input 0≤V
IN
≤Vcc+0.3V,
all other pins not under test=0 V)
I
(OL)
: Output Leakage Current(Data Out is disabled, 0V≤V
OUT
≤V
CC
)
V
OH
: Output High Voltage Level (I
OH
= -2mA)
V
OL :
Output Low Voltage Level (I
OL
= 2mA)
* NOTE : I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time, t
HPC
.
