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M54HC11D1

RAD-HARD TRIPLE 3-INPUT AND GATE

器件类别:逻辑    逻辑   

厂商名称:ST(意法半导体)

厂商官网:http://www.st.com/

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
ST(意法半导体)
零件包装代码
DIP
包装说明
DIP, DIP14,.3
针数
14
Reach Compliance Code
_compli
系列
HC/UH
JESD-30 代码
R-CDIP-T14
JESD-609代码
e0
长度
19 mm
负载电容(CL)
50 pF
逻辑集成电路类型
AND GATE
最大I(ol)
0.004 A
功能数量
3
输入次数
3
端子数量
14
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装代码
DIP
封装等效代码
DIP14,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
2/6 V
Prop。Delay @ Nom-Su
26 ns
传播延迟(tpd)
130 ns
认证状态
Not Qualified
施密特触发器
NO
座面最大高度
3.7 mm
最大供电电压 (Vsup)
6 V
最小供电电压 (Vsup)
2 V
标称供电电压 (Vsup)
4.5 V
表面贴装
NO
技术
CMOS
温度等级
MILITARY
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
总剂量
50k Rad(Si) V
宽度
7.62 mm
文档预览
M54HC11
RAD-HARD TRIPLE 3-INPUT AND GATE
s
s
s
s
s
s
s
s
s
s
s
HIGH SPEED:
t
PD
= 9ns (TYP.) at V
CC
= 6V
LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at T
A
=25°C
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 4mA (MIN)
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 6V
PIN AND FUNCTION COMPATIBLE WITH
54 SERIES 11
SPACE GRADE-1: ESA SCC QUALIFIED
50 krad QUALIFIED, 100 krad AVAILABLE ON
REQUEST
NO SEL UNDER HIGH LET HEAVY IONS
IRRADIATION
DEVICE FULLY COMPLIANT WITH
SCC-9201-107
DILC-14
FPC-14
ORDER CODES
PACKAGE
DILC
FPC
FM
M54HC11D
M54HC11K
EM
M54HC11D1
M54HC11K1
The internal circuit is composed of 4 stages
including buffer output, which enables high noise
immunity and stable output.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
DESCRIPTION
The M54HC11 is an high speed CMOS TRIPLE
3-INPUT AND GATE fabricated with silicon gate
C
2
MOS technology.
PIN CONNECTION
March 2004
1/8
M54HC11
IEC LOGIC SYMBOLS
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN N°
1, 3, 9
2, 4, 10
13, 5, 11
12, 6, 8
7
14
SYMBOL
1A to 3A
1B to 3B
1C to 3C
1Y to 3Y
GND
V
CC
NAME AND FUNCTION
Data Inputs
Data Inputs
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
A
L
X
X
H
X : Don’t Care
B
X
L
X
H
C
X
X
L
H
Y
L
L
L
H
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
Parameter
Value
-0.5 to +7
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±
20
±
20
±
25
±
50
300
-65 to +150
265
Unit
V
V
V
mA
mA
mA
mA
mW
°C
°C
I
CC
or I
GND
DC V
CC
or Ground Current
Power Dissipation
P
D
T
stg
T
L
Storage Temperature
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
2/8
M54HC11
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
T
op
t
r
, t
f
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Input Rise and Fall Time
V
CC
= 2.0V
V
CC
= 4.5V
V
CC
= 6.0V
Parameter
Value
2 to 6
0 to V
CC
0 to V
CC
-55 to 125
0 to 1000
0 to 500
0 to 400
Unit
V
V
V
°C
ns
ns
ns
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
CC
(V)
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
V
OL
Low Level Output
Voltage
2.0
4.5
6.0
4.5
6.0
I
I
I
CC
Input Leakage
Current
Quiescent Supply
Current
6.0
6.0
I
O
=-20
µA
I
O
=-20
µA
I
O
=-20
µA
I
O
=-4.0 mA
I
O
=-5.2 mA
I
O
=20
µA
I
O
=20
µA
I
O
=20
µA
I
O
=4.0 mA
I
O
=5.2 mA
V
I
= V
CC
or GND
V
I
= V
CC
or GND
T
A
= 25°C
Min.
1.5
3.15
4.2
0.5
1.35
1.8
1.9
4.4
5.9
4.18
5.68
2.0
4.5
6.0
4.31
5.8
0.0
0.0
0.0
0.17
0.18
0.1
0.1
0.1
0.26
0.26
±
0.1
1
1.9
4.4
5.9
4.13
5.63
0.1
0.1
0.1
0.33
0.33
±
1
10
Typ.
Max.
Value
-40 to 85°C
Min.
1.5
3.15
4.2
0.5
1.35
1.8
1.9
4.4
5.9
4.10
5.60
0.1
0.1
0.1
0.40
0.40
±
1
20
µA
µA
V
V
Max.
-55 to 125°C
Min.
1.5
3.15
4.2
0.5
1.35
1.8
Max.
V
Unit
V
IH
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
V
IL
V
V
OH
3/8
M54HC11
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, Input t
r
= t
f
= 6ns)
Test Condition
Symbol
Parameter
V
CC
(V)
2.0
4.5
6.0
2.0
4.5
6.0
T
A
= 25°C
Min.
Typ.
30
8
7
40
10
9
Max.
75
15
13
85
17
14
Value
-40 to 85°C
Min.
Max.
95
19
16
105
21
18
-55 to 125°C
Min.
Max.
110
22
19
130
26
22
ns
Unit
t
TLH
t
THL
Output Transition
Time
t
PLH
t
PHL
Propagation Delay
Time
ns
CAPACITIVE CHARACTERISTICS
Test Condition
Symbol
Parameter
V
CC
(V)
5.0
5.0
T
A
= 25°C
Min.
Typ.
5
26
Max.
10
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
Unit
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance (note
1)
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/3 (per gate)
TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50Ω)
4/8
M54HC11
WAVEFORM: PROPAGATION DELAY TIME
(f=1MHz; 50% duty cycle)
5/8
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参数对比
与M54HC11D1相近的元器件有:M54HC11K、M54HC11D、M54HC11_04、M54HC11、M54HC11K1。描述及对比如下:
型号 M54HC11D1 M54HC11K M54HC11D M54HC11_04 M54HC11 M54HC11K1
描述 RAD-HARD TRIPLE 3-INPUT AND GATE RAD-HARD TRIPLE 3-INPUT AND GATE RAD-HARD TRIPLE 3-INPUT AND GATE RAD-HARD TRIPLE 3-INPUT AND GATE RAD-HARD TRIPLE 3-INPUT AND GATE RAD-HARD TRIPLE 3-INPUT AND GATE
是否Rohs认证 不符合 不符合 不符合 - - 不符合
厂商名称 ST(意法半导体) ST(意法半导体) ST(意法半导体) - - ST(意法半导体)
零件包装代码 DIP DFP DIP - - DFP
包装说明 DIP, DIP14,.3 DFP, FL14,.3 DIP, DIP14,.3 - - DFP, FL14,.3
针数 14 14 14 - - 14
Reach Compliance Code _compli _compli _compli - - _compli
系列 HC/UH HC/UH HC/UH - - HC/UH
JESD-30 代码 R-CDIP-T14 R-CDFP-F14 R-CDIP-T14 - - R-CDFP-F14
JESD-609代码 e0 e0 e0 - - e0
长度 19 mm 9.95 mm 19 mm - - 9.95 mm
负载电容(CL) 50 pF 50 pF 50 pF - - 50 pF
逻辑集成电路类型 AND GATE AND GATE AND GATE - - AND GATE
最大I(ol) 0.004 A 0.004 A 0.004 A - - 0.004 A
功能数量 3 3 3 - - 3
输入次数 3 3 3 - - 3
端子数量 14 14 14 - - 14
最高工作温度 125 °C 125 °C 125 °C - - 125 °C
最低工作温度 -55 °C -55 °C -55 °C - - -55 °C
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED - - CERAMIC, METAL-SEALED COFIRED
封装代码 DIP DFP DIP - - DFP
封装等效代码 DIP14,.3 FL14,.3 DIP14,.3 - - FL14,.3
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR - - RECTANGULAR
封装形式 IN-LINE FLATPACK IN-LINE - - FLATPACK
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - NOT SPECIFIED
电源 2/6 V 2/6 V 2/6 V - - 2/6 V
Prop。Delay @ Nom-Su 26 ns 26 ns 26 ns - - 26 ns
传播延迟(tpd) 130 ns 130 ns 130 ns - - 130 ns
认证状态 Not Qualified Not Qualified Not Qualified - - Not Qualified
施密特触发器 NO NO NO - - NO
最大供电电压 (Vsup) 6 V 6 V 6 V - - 6 V
最小供电电压 (Vsup) 2 V 2 V 2 V - - 2 V
标称供电电压 (Vsup) 4.5 V 4.5 V 4.5 V - - 4.5 V
表面贴装 NO YES NO - - YES
技术 CMOS CMOS CMOS - - CMOS
温度等级 MILITARY MILITARY MILITARY - - MILITARY
端子面层 Tin/Lead (Sn/Pb) TIN LEAD Tin/Lead (Sn/Pb) - - TIN LEAD
端子形式 THROUGH-HOLE FLAT THROUGH-HOLE - - FLAT
端子节距 2.54 mm 1.27 mm 2.54 mm - - 1.27 mm
端子位置 DUAL DUAL DUAL - - DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - NOT SPECIFIED
总剂量 50k Rad(Si) V 50k Rad(Si) V 50k Rad(Si) V - - 50k Rad(Si) V
宽度 7.62 mm 6.91 mm 7.62 mm - - 6.91 mm
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