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M5M29KB641AVP

4MX16 FLASH 3.3V PROM, 70ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48

器件类别:存储   

厂商名称:Renesas(瑞萨电子)

厂商官网:https://www.renesas.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Renesas(瑞萨电子)
零件包装代码
TSOP1
包装说明
12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48
针数
48
Reach Compliance Code
unknown
ECCN代码
3A991.B.1.A
Is Samacsys
N
最长访问时间
70 ns
备用内存宽度
8
启动块
BOTTOM
命令用户界面
YES
数据轮询
NO
JESD-30 代码
R-PDSO-G48
JESD-609代码
e2
长度
18.4 mm
内存密度
67108864 bit
内存集成电路类型
FLASH
内存宽度
16
湿度敏感等级
3
功能数量
1
部门数/规模
8,127
端子数量
48
字数
4194304 words
字数代码
4000000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
4MX16
封装主体材料
PLASTIC/EPOXY
封装代码
TSOP1
封装等效代码
TSSOP48,.8,20
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE
页面大小
128/256 words
并行/串行
PARALLEL
峰值回流温度(摄氏度)
260
电源
3.3 V
编程电压
3.3 V
认证状态
Not Qualified
就绪/忙碌
YES
座面最大高度
1.2 mm
部门规模
8K,64K
最大待机电流
0.000006 A
最大压摆率
0.035 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
TIN COPPER
端子形式
GULL WING
端子节距
0.5 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
20
切换位
NO
类型
NOR TYPE
宽度
12 mm
Base Number Matches
1
文档预览
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Preliminary
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI LSIs
M5M29KB/T641AVP
67,108,864-BIT (8,388,608-WORD BY 8-BIT /4,194,304-WORD BY 16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
DESCRIPTION
The MITSUBISHI M5M29KB/T641AVP are 3.3V-only high
speed 67,108,864-bit CMOS boot block FLASH Memories with
alternating BGO(Back Ground Operation) feature. The BGO
feature of the device allows Program or Erase operations to be
performed in one bank while the device simultaneously allows
Read operations to be performed on the other bank.
This BGO feature is suitable for mobile and personal
computing, and communication products.
The M5M29KB/T641AVP are fabricated by CMOS
technology for the peripheral circuit and DINOR IV(Divided bit-
line NOR IV) architecture for the memory cell, and are
available in 48pin TSOP(I) lead free use.
M5M29KB/T641AVP provides for Software Lock Release
function. Usually, all memory blocks are locked and can not
be programmed or erased, when WP# is low. Using Software
Lock Release function, program or erase operation can be
executed.
FEATURES
Access time
Supply voltage
Package
Flash
70ns (Max.)
VCC= 3.0 ~ 3.6V
Ta=-40 ~ 85
°C
Ambient temperature
48pin TSOP(Type-I), Lead pitch 0.5mm
Outer-lead finishing : Sn-Cu
APPLICATION
Digital Cellar Phone, Telecommunication,
PDA, Car Navigation System, Video Game Machine
PIN CONFIGURATION (TOP VIEW)
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RP#
A21
WP#
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
GND
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
GND
CE#
A0
12.0 mm
M5M29KB/T641AVP
20.0 mm
VCC
GND
A0-A21
DQ0-DQ15
CE#
OE#
: VCC
: GND
: Address
: Data I/O
: Chip enable
: Output enable
WE#
WP#
RP#
BYTE#
RY/BY#
: Write enable
: Write protect
: Reset power down
: Byte enable
: Ready/Busy
Outline
48P3R-C
Dec. 2002, Rev.0.2.48a_bezz
Preliminary
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI LSIs
M5M29KB/T641AVP
67,108,864-BIT (8,388,608-WORD BY 8-BIT /4,194,304-WORD BY 16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
Keep safety first in your circuit designs!
lMitsubishi
Electric Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs, with appropriate measures such as (i)
placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Notes regarding these materials
lThese
materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under
any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a
third party.
lMitsubishi
Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms,
or circuit application examples contained in these materials.
lAll
information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Mitsubishi Electric Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an
authorized Mitsubishi Semiconductor product distributor for the latest product information before
purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi
Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.mitsubishichips.com).
lWhen
using any or all of the information contained in these materials, including product data,
diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system
before making a final decision on the applicability of the information and products. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
lMitsubishi
Electric Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
lThe
prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in
whole or in part these materials.
lIf
these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
lPlease
contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product
distributor for further details on these materials or the products contained therein.
Copyright © 2002 Mitsubishi Electric Corporation. All rights reserved.
Dec. 2002, Rev.0.2.48a_bezz
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