POWEREX
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63823P/FP/GP
PIN CONFIGURATION
IN1→
1
IN2→
2
IN3→
3
INPUT
IN4→
4
IN5→
5
IN6
→
6
IN7→
7
GND
8
16
→
O1
15
→
O2
14
→
O3
13
→
O4
12
→
O5
11
→O6
10
→O7
9
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
M63823P, M63823FP and M63823GP are seven-circuit
Darlington transistor arrays with clamping diodes. The cir-
cuits are made of NPN transistors. Both the semi-conductor
integrated circuits perform high-current driving with ex-
tremely low input-current supply.
Production lineup has been newly expanded with the addi-
tion of 225mil (GP) package.
M63823P and M63823FP have the same pin connection as
M54523P and M54523FP. (Compatible with M54523P and
M54523FP) More over, the features of M63823P and
M63823FP are equal or superior to those of M54523P and
M54523FP.
FEATURES
q
Three package configurations (P, FP and GP)
q
Pin connection Compatible with M54523P and M54523FP
q
q
q
q
q
OUTPUT
→COM
COMMON
16P4(P)
16P2N-A(FP)
Package type 16P2S-A(GP)
High breakdown voltage (BV
CEO
≥
50V)
High-current driving (I
C(max)
= 500mA)
With clamping diodes
PMOS Compatible input
Wide operating temperature range (Ta = –40 to +85°C)
CIRCUIT DIAGRAM
COM
OUTPUT
INPUT
2.7k
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M63823P, M63823FP and M63823GP each have seven
circuits consisting of NPN Darlington transistors. These ICs
have resistance of 2.7kΩ between input transistor bases and
input pins. A spike-killer clamping diode is provided between
each output pin (collector) and COM pin (pin 9). The output
transistor emitters are all connected to the GND pin (pin 8).
The collector current is 500mA maximum. Collector-emitter
supply voltage is 50V maximum.The M63823FP and
M63823GP is enclosed in molded small flat package, en-
abling space-saving design.
7.2k
3k
GND
The seven circuits share the COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit :
Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
I
C
V
I
I
F
V
R
P
d
T
opr
T
stg
Parameter
Collector-emitter voltage
Collector current
(Unless otherwise noted, Ta = –40 ~ +85
°
C)
Conditions
Output, H
Current per circuit output, L
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +50
500
–0.5 ~ +30
500
50
1.47(P)/1.00(FP)/0.80(GP)
–40 ~ +85
–55 ~ +125
Unit
V
mA
V
mA
V
W
°C
°C
Jan. 2000
POWEREX
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
(Unless otherwise noted, Ta = –40 ~ +85
°
C)
Symbol
V
O
Output voltage
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
Duty Cycle
P : no more than 8%
FP : no more than 5%
GP : no more than 4%
Duty Cycle
P : no more than 30%
FP : no more than 20%
GP : no more than 15%
I
C
≤
400mA
I
C
≤
200mA
Parameter
Limits
min
0
0
typ
—
—
max
50
400
mA
0
3.85
3.4
0
—
—
—
—
200
25
25
0.6
Unit
V
I
C
V
IH
V
IL
“H” input voltage
“L” input voltage
V
V
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta = 25
°
C)
Symbol
V
(BR) CEO
V
CE(sat)
I
I
V
F
I
R
h
FE
Parameter
Collector-emitter breakdown voltage
Test conditions
I
CEO
= 100µA
I
I
= 500µA, I
C
= 350mA
Limits
min
50
—
—
—
—
—
—
1000
typ
—
1.2
1.0
0.9
0.9
1.4
—
2000
max
—
1.6
1.3
1.1
1.4
2.0
100
—
Unit
V
V
mA
V
µA
—
Collector-emitter saturation voltage I
I
= 350µA, I
C
= 200mA
I
I
= 250µA, I
C
= 100mA
Input current
V
I
= 3.85V
Clamping diode forward volltage
I
F
= 350mA
Clamping diode reverse current
V
R
= 50V
DC amplification factor
V
CE
= 4V, I
C
= 350mA
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
°
C)
Symbol
t
on
t
off
Parameter
Turn-on time
Turn-off time
C
L
= 15pF (note 1)
Test conditions
Limits
min
—
—
typ
15
350
max
—
—
Unit
ns
ns
NOTE 1 TEST CIRCUIT
TIMING DIAGRAM
INPUT
INPUT
Vo
50%
50%
Measured device
OPEN
R
L
OUTPUT
OUTPUT
50%
50%
PG
50Ω
C
L
ton
toff
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω
V
P
= 3.85V
P-P
(2)Input-output conditions : R
L
= 25Ω, Vo = 10V
(3)Electrostatic capacity C
L
includes floating capacitance
at connections and input capacitance at probes
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
POWEREX
TYPICAL CHARACTERISTICS
M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
Thermal Derating Factor Characteristics
2.0
500
Output Saturation Voltage
Collector Current Characteristics
I
I
= 500µA
Power dissipation Pd(max) (W)
1.5
M63823P
Collector
current
Ic (mA)
400
M63823FP
300
1.0
M63823GP
0.744
0.520
0.418
200
Ta = 25°C
Ta = 85°C
Ta = –40°C
0.5
100
0
0
25
50
75 85
100
0
0
0.5
1.0
1.5
2.0
Ambient temperature Ta (°C)
Duty Cycle-Collector Characteristics
(M63823P)
500
1
Output saturation voltage
V
CE(sat)
(V)
Duty Cycle-Collector Characteristics
(M63823P)
500
Collector current Ic (mA)
Collector current Ic (mA)
400
2
400
1
300
3
4
5
6
7
300
2
200
•The
collector current values
represent the current per circuit.
•Repeated
frequencyy
≥
10Hz
•The
value the circle represents the
value of the simultaneously-operated circuit.
•Ta
= 25°C
200
•The
collector current values
represent the current per circuit.
•Repeated
frequency
≥
10Hz
•The
value the circle represents the
value of the simultaneously-operated circuit.
•Ta
= 85°C
100
100
3
4
5
6
7
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%)
Duty Cycle-Collector Characteristics
(M63823FP)
500
1
Duty cycle (%)
Duty Cycle-Collector Characteristics
(M63823FP)
500
Collector current Ic (mA)
Collector current Ic (mA)
400
400
300
2
3
4
5
6
7
300
1
200
•The
collector current values
represent the current per circuit.
•Repeated
frequency
≥
10Hz
•The
value the circle represents the
value of the simultaneously-operated circuit.
•Ta
= 25°C
200
2
4
•The
collector current values
represent the current per circuit.
5
•Repeated
frequency
≥
10Hz
76
•The
value the circle represents the
value of the simultaneously-operated circuit.
•Ta
= 85°C
3
100
100
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
Jan. 2000
POWEREX
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
Duty Cycle-Collector Characteristics
(M63823GP)
500
500
Duty Cycle-Collector Characteristics
(M63823GP)
Collector current Ic
(mA)
400
1
Collector current Ic
(mA)
400
300
2
300
1
200
•The
collector current values
represent the current per circuit.
•Repeated
frequency
≥
10Hz
•The
value the circle represents the
value of the simultaneously-operated circuit.
•Ta
= 25°C
100
0
3
4
5
6
7
200
2
100
0
20
40
60
80
100
0
•The
collector current values
represent the current per circuit.
•Repeated
frequency
≥
10Hz
•The
value the circle represents the
value of the simultaneously-operated circuit.
•Ta
= 85°C
3
4
5
6
7
0
20
40
60
80
100
Duty cycle (%)
DC Amplification Factor
Collector Current Characteristics
10
4
7
5
3
2
V
CE
= 4V
Duty cycle (%)
Grounded Emitter Transfer Characteristics
500
DC amplification factor
h
FE
Collector current Ic (mA)
Ta = 85°C
400
300
10
3
7
5
3
2
Ta = –40°C
Ta= 25°C
200
Ta = 85°C
Ta = 25°C
Ta = –40°C
100
10
2
10
1
2
3
5 7
10
2
2
3
5 7
10
3
0
0
1
2
3
4
5
Collector current Ic
C
(mA)
Input Characteristics
16
500
Input voltage V
I
(V)
Clamping Diode Characteristics
Forward bias current I
F
(mA)
Input Current
I
I
(mA)
12
Ta = –40°C
400
300
8
Ta = 25°C
200
Ta = 25°C
4
Ta = 85°C
100
Ta = 85°C
Ta = –40°C
0
0
5
10
15
20
25
0
0
0.5
1.0
1.5
2.0
Input voltage V
I
(V)
Forward bias voltage V
F
(V)
Jan. 2000
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