M54HC10
M74HC10
TRIPLE 3-INPUT NAND GATE
.
.
.
.
.
.
.
.
HIGH SPEED
t
PD
= 6 ns (TYP.) AT V
CC
= 5 V
LOW POWER DISSIPATION
I
CC
= 1
µA
(MAX.) AT T
A
= 25
°C
HIGH NOISE IMMUNITY
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
SYMMETRICAL OUTPUT IMPEDANCE
IOH
= I
OL
= 4 mA (MIN.)
BALANCED PROPAGATION DELAYS
t
PLH
= t
PHL
WIDE OPERATING VOLTAGE RANGE
V
CC
(OPR) = 2 V TO 6 V
PIN AND FUNCTION COMPATIBLE WITH
54/74LS10
B1R
(Plastic Package)
F1R
(Ceramic Package)
M1R
(Micro Package)
C1R
(Chip Carrier)
ORDER CODES :
M54HC10F1R
M74HC10M1R
M74HC10B1R
M74HC10C1R
DESCRIPTION
The M54/74HC10 is a high speed CMOS TRIPLE
3-INPUT NAND GATE fabricated with silicon gate
2
C MOS technology.
It has the same high speed performance of LSTTL
combined with true CMOS low power consumption.
The internal circuit is composed of 3 stages includ-
ing buffer output, which enables high noise im-
munity and stable output.
All inputs are equipped with protection circuits
against static discharge and transient excess volt-
age.
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN CONNECTIONS
(top view)
NC =
No Internal
Connection
December 1992
1/9
M54/M74HC10
TRUTH TABLE
A
L
X
X
H
B
X
L
X
H
C
X
X
L
H
Y
H
H
H
L
IEC LOGIC SYMBOL
PIN DESCRIPTION
PIN No
1, 3, 9
2, 4, 10
13, 5, 11
12, 6, 8
7
14
SYMBOL
1A to 3A
1B to 3B
1C to 3C
1Y to 3Y
GND
V
CC
NAME AND FUNCTION
Data Inputs
Data Inputs
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
SCHEMATIC CIRCUIT
(Per Gate)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
CC
I
O
or I
GND
P
D
T
stg
T
L
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source Sink Current Per Output Pin
DC V
CC
or Ground Current
Power Dissipation
Storage Temperature
Lead Temperature (10 sec)
Parameter
Value
-0.5 to +7
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±
20
±
20
±
25
±
50
500 (*)
-65 to +150
300
Unit
V
V
V
mA
mA
mA
mA
mW
o
o
C
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied.
(*) 500 mW:
≅
65
o
C derate to 300 mW by 10mW/
o
C: 65
o
C to 85
o
C
2/9
M54/M74HC10
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
T
op
t
r
, t
f
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature:
M54HC
Series
M74HC
Series
Input Rise and Fall Time
Parameter
Value
2 to 6
0 to V
CC
0 to V
CC
-55 to +125
-40 to +85
0 to 1000
0 to 500
0 to 400
Unit
V
V
V
C
C
ns
o
o
V
CC
= 2 V
V
CC
= 4.5 V
V
CC
= 6 V
DC SPECIFICATIONS
Test Conditions
Symbol
Parameter
V
CC
(V)
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
V
OL
Low Level Output
Voltage
2.0
4.5
6.0
4.5
6.0
I
I
I
CC
Input Leakage
Current
Quiescent Supply
Current
6.0
6.0
1.9
4.4
5.9
4.18
5.68
2.0
4.5
6.0
4.31
5.8
0.0
0.0
0.0
0.17
0.18
0.1
0.1
0.1
0.26
0.26
±0.1
1
T
A
= 25 C
54HC and 74HC
Min.
1.5
3.15
4.2
0.5
1.35
1.8
V
I
=
I
O
=-20
µA
V
IH
or
V
IL
I
O
=-4.0 mA
I
O
=-5.2 mA
V
I
=
I
O
= 20
µA
V
IH
or
V
IL
I
O
= 4.0 mA
I
O
= 5.2 mA
V
I
= V
CC
or GND
V
I
= V
CC
or GND
1.9
4.4
5.9
4.13
5.63
0.1
0.1
0.1
0.33
0.33
±1
10
Typ.
Max.
o
Value
-40 to 85
o
C -55 to 125
o
C
74HC
54HC
Min.
1.5
3.15
4.2
0.5
1.35
1.8
1.9
4.4
5.9
4.10
5.60
0.1
0.1
0.1
0.40
0.40
±1
20
µA
µA
V
V
Max.
Min.
1.5
3.15
4.2
0.5
1.35
1.8
V
Max.
V
Unit
V
IH
High Level Input
Voltage
Low Level Input
Voltage
High Level
Output Voltage
V
IL
V
OH
3/9
M54/M74HC10
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, Input t
r
= t
f
= 6 ns)
Test Conditions
Symbol
Parameter
V
CC
(V)
2.0
4.5
6.0
2.0
4.5
6.0
C
IN
C
PD
(*)
Input Capacitance
Power Dissipation
Capacitance
T
A
= 25 C
54HC and 74HC
Min. Typ. Max.
30
8
7
27
9
8
5
23
75
15
13
75
15
13
10
o
Value
-40 to 85
o
C -55 to 125
o
C
74HC
54HC
Min. Max. Min. Max.
95
19
16
95
19
16
10
110
22
19
110
22
19
10
pF
pF
ns
ns
Unit
t
TLH
t
THL
t
PLH
t
PHL
Output Transition
Time
Propagation
Delay Time
(*) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load.
(Refer to Test Circuit). Average operting current can be obtained by the following equation. I
CC
(opr) = C
PD
•V
CC
•f
IN
+ I
CC
/3 (per Gate)
SWITCHING CHARACTERISTICS TEST CIRCUIT
TEST CIRCUIT I
CC
(Opr.)
INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICS TEST.
4/9
M54/M74HC10
Plastic DIP14 MECHANICAL DATA
mm
MIN.
a1
B
b
b1
D
E
e
e3
F
I
L
Z
1.27
3.3
2.54
0.050
8.5
2.54
15.24
7.1
5.1
0.130
0.100
0.51
1.39
0.5
0.25
20
0.335
0.100
0.600
0.280
0.201
1.65
TYP.
MAX.
MIN.
0.020
0.055
0.020
0.010
0.787
0.065
inch
TYP.
MAX.
DIM.
P001A
5/9
RF/无线
