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M74HC11RM13TR

Logic Gates Triple 3-Input AND

器件类别:逻辑    逻辑   

厂商名称:ST(意法半导体)

厂商官网:http://www.st.com/

器件标准:

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器件:M74HC11RM13TR

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
ST(意法半导体)
零件包装代码
SOIC
包装说明
SOP, SOP14,.25
针数
14
Reach Compliance Code
compliant
系列
HC/UH
JESD-30 代码
R-PDSO-G14
JESD-609代码
e4
长度
8.65 mm
负载电容(CL)
50 pF
逻辑集成电路类型
AND GATE
最大I(ol)
0.004 A
湿度敏感等级
1
功能数量
3
输入次数
3
端子数量
14
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP14,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
包装方法
TAPE AND REEL
峰值回流温度(摄氏度)
260
电源
2/6 V
Prop。Delay @ Nom-Sup
26 ns
传播延迟(tpd)
130 ns
认证状态
Not Qualified
施密特触发器
NO
座面最大高度
1.75 mm
最大供电电压 (Vsup)
6 V
最小供电电压 (Vsup)
2 V
标称供电电压 (Vsup)
4.5 V
表面贴装
YES
技术
CMOS
温度等级
MILITARY
端子面层
Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
宽度
3.9 mm
文档预览
M74HC11
TRIPLE 3-INPUT AND GATE
s
s
s
s
s
s
s
HIGH SPEED:
t
PD
= 9ns (TYP.) at V
CC
= 6V
LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at T
A
=25°C
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 4mA (MIN)
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 6V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 11
DIP
SOP
TSSOP
ORDER CODES
PACKAGE
DIP
SOP
TSSOP
TUBE
M74HC11B1R
M74HC11M1R
DESCRIPTION
The M74HC11 is an high speed CMOS TRIPLE
3-INPUT AND GATE fabricated with silicon gate
C
2
MOS technology.
The internal circuit is composed of 4 stages
including buffer output, which enables high noise
immunity and stable output.
PIN CONNECTION AND IEC LOGIC SYMBOLS
O
so
b
te
le
ro
P
uc
d
s)
t(
so
b
-O
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
P
te
le
od
r
M74HC11RM13TR
M74HC11TTR
s)
t(
uc
T&R
August 2001
1/8
M74HC11
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
1, 3, 9
2, 4, 10
13, 5, 11
12, 6, 8
7
14
SYMBOL
1A to 3A
1B to 3B
1C to 3C
1Y to 3Y
GND
V
CC
NAME AND FUNCTION
Data Inputs
Data Inputs
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
A
L
X
X
H
X : Don’t Care
B
X
L
X
H
C
X
X
L
H
Y
L
L
L
H
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
Parameter
I
CC
or I
GND
DC V
CC
or Ground Current
P
D
Power Dissipation
T
stg
T
L
Storage Temperature
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
°
C; derate to 300mW by 10mW/
°
C from 65
°
C to 85
°
C
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
b
O
so
V
I
V
O
T
op
t
r
, t
f
te
le
ro
P
uc
d
s)
t(
b
-O
so
te
le
r
P
-0.5 to +7
od
Value
±
20
±
20
±
25
±
50
500(*)
s)
t(
uc
Unit
V
V
V
mA
mA
mA
mA
mW
°C
°C
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
-65 to +150
300
Parameter
Value
2 to 6
0 to V
CC
0 to V
CC
-55 to 125
V
CC
= 2.0V
V
CC
= 4.5V
V
CC
= 6.0V
0 to 1000
0 to 500
0 to 400
Unit
V
V
V
°C
ns
ns
ns
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Input Rise and Fall Time
2/8
M74HC11
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
CC
(V)
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
V
OL
Low Level Output
Voltage
2.0
4.5
6.0
4.5
6.0
I
I
I
CC
Input Leakage
Current
Quiescent Supply
Current
6.0
6.0
I
O
=-20
µA
I
O
=-20
µA
I
O
=-20
µA
I
O
=-4.0 mA
I
O
=-5.2 mA
I
O
=20
µA
I
O
=20
µA
I
O
=20
µA
I
O
=4.0 mA
I
O
=5.2 mA
V
I
= V
CC
or GND
V
I
= V
CC
or GND
T
A
= 25°C
Min.
1.5
3.15
4.2
0.5
1.35
1.8
1.9
4.4
5.9
4.18
5.68
2.0
4.5
6.0
4.31
5.8
0.0
0.0
0.0
0.17
0.18
0.1
0.1
0.1
0.26
0.26
1.9
4.4
5.9
4.13
5.63
0.1
0.1
Typ.
Max.
Value
-40 to 85°C
Min.
1.5
3.15
4.2
0.5
1.35
1.8
1.9
4.4
5.9
V
4.10
5.60
Max.
-55 to 125°C
Min.
1.5
3.15
4.2
0.5
1.35
1.8
Max.
V
Unit
V
IH
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
V
IL
V
V
OH
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, Input t
r
= t
f
= 6ns)
Test Condition
Symbol
Parameter
t
TLH
t
THL
Output Transition
Time
t
PLH
t
PHL
Propagation Delay
Time
O
so
b
te
le
ro
P
uc
d
V
CC
(V)
2.0
4.5
6.0
2.0
4.5
6.0
s)
t(
so
b
-O
Min.
30
8
7
40
10
9
P
te
le
±
0.1
1
Value
od
r
0.1
0.33
0.33
±
1
10
s)
t(
uc
0.1
0.1
0.1
0.40
0.40
±
1
20
V
µA
µA
T
A
= 25°C
Typ.
Max.
75
15
13
85
17
14
-40 to 85°C
Min.
Max.
95
19
16
105
21
18
-55 to 125°C
Min.
Max.
110
22
19
130
26
22
Unit
ns
ns
3/8
M74HC11
CAPACITIVE CHARACTERISTICS
Test Condition
Symbol
Parameter
V
CC
(V)
5.0
5.0
T
A
= 25°C
Min.
Typ.
5
26
Max.
10
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
Unit
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance (note
1)
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/3 (per gate)
TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50Ω)
WAVEFORM : PROPAGATION DELAY TIME
(f=1MHz; 50% duty cycle)
O
so
b
te
le
ro
P
uc
d
s)
t(
so
b
-O
P
te
le
od
r
s)
t(
uc
4/8
M74HC11
Plastic DIP-14 MECHANICAL DATA
mm.
DIM.
MIN.
a1
B
b
b1
D
E
e
e3
F
I
L
Z
1.27
3.3
8.5
2.54
15.24
7.1
5.1
0.51
1.39
0.5
0.25
20
0.335
0.100
0.600
1.65
TYP
MAX.
MIN.
0.020
0.055
0.020
0.010
0.787
0.065
TYP.
MAX.
inch
O
so
b
te
le
ro
P
uc
d
s)
t(
so
b
-O
2.54
P
te
le
0.050
od
r
0.130
s)
t(
uc
0.280
0.201
0.100
P001A
5/8
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