M74HC4066
QUAD BILATERAL SWITCH
s
s
s
s
s
s
s
HIGH SPEED:
t
PD
= 7ns (TYP.) at V
CC
= 6V
LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at T
A
=25°C
LOW "ON" RESISTANCE:
R
ON
= 50Ω TYP. AT V
CC
= 9V, I
I/O
= 100
µA
WIDE OPERATING VOLTAGE RANGE
V
CC
(OPR) = 2V TO 12V
SINE WAVE DISTORTION:
0.042% at V
CC
= 4V f = 1KHz
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 4066
DIP
SOP
TSSOP
ORDER CODES
PACKAGE
DIP
SOP
TSSOP
TUBE
M74HC4066B1R
M74HC4066M1R
T&R
M74HC4066RM13TR
M74HC4066TTR
DESCRIPTION
The M74HC4066 is an high speed CMOS QUAD
BILATERAL SWITCH fabricated with silicon gate
C
2
MOS technology.
The C input is provided to control the switch; the
switch is on when the C input is held high and off
when C is held low.
PIN CONNECTION AND IEC LOGIC SYMBOLS
July 2001
1/11
M74HC4066
LOGIC DIAGRAM
PIN DESCRIPTION
PIN No
1, 4, 8, 11
2, 3, 9, 10
13, 5, 6, 12
7
14
SYMBOL
1 to 4 I/O
1 to 4 O/I
1C to 4C
GND
V
CC
NAME AND FUNCTION
Independent Inputs/Out-
puts
Independent Outputs/
Inputs
Enable Inputs (Active
High)
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
CONTROL
H
L
SWITCH FUNCTION
ON
OFF
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
I/O
I
OK
I
IOK
I
O
Supply Voltage
DC Input Voltage
DC Input/Output Voltage
Control Input DC Diode Current
I/O DC Diode Current
DC Output Source Sink Current Per Output Pin
Parameter
Value
-0.5 to +13
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±
20
±
20
±
25
±
50
500(*)
-65 to +150
300
Unit
V
V
V
mA
mA
mA
mA
mW
°C
°C
I
CC
or I
GND
DC V
CC
or Ground Current
P
D
Power Dissipation
T
stg
T
L
Storage Temperature
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
°
C; derate to 300mW by 10mW/
°
C from 65
°
C to 85
°
C
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
I/O
T
op
Supply Voltage
Input Voltage (Control)
I/O Voltage
Operating Temperature
Input Rise and Fall Time
t
r
, t
f
V
CC
= 2.0V
V
CC
= 4.5V
V
CC
= 6.0V
V
CC
= 10.0V
Parameter
Value
2 to 12
0 to V
CC
0 to V
CC
-55 to 125
0 to 1000
0 to 500
0 to 400
0 to 250
ns
Unit
V
V
V
°C
2/11
M74HC4066
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
CC
(V)
2.0
4.5
9.0
12.0
2.0
4.5
9.0
12.0
4.5
V
I
= V
IHC
9.0 V
I/O
= V
CC
to GND
I
I/O
≤
1mA
12.0
4.5
V
I
= V
IHC
9.0 V
I/O
= V
CC
or GND
I
I/O
≤
1mA
12.0
4.5
V
I
= V
IHC
9.0 V
I/O
= V
CC
or GND
I
I/O
≤
1mA
12.0
V
OS
= V
CC
or GND
12.0 V
IS
= V
CC
or GND
V
IN
= V
ILC
12.0
6.0
6.0
9.0
12.0
V
OS
= V
CC
or GND
V
IN
= V
IHC
V
I
= V
CC
or GND
V
I
= V
CC
or GND
T
A
= 25°C
Min.
1.5
3.15
6.3
8.4
0.5
1.35
2.7
3.6
170
85
80
100
75
70
Typ.
Max.
Value
-40 to 85°C
Min.
1.5
3.15
6.3
8.4
0.5
1.35
2.7
3.6
200
100
90
130
95
90
Max.
-55 to 125°C
Min.
1.5
3.15
6.3
8.4
0.5
1.35
2.7
3.6
250
150
120
160
115
110
Max.
Unit
V
IHC
High Level Control
Input Voltage
V
V
ILC
Low Level Control
Input Voltage
V
R
ON
ON Resistance
∆R
ON
Difference of ON
Resistance
between switches
Input/Output
Leakage Current
(SWITCH OFF)
Switch Input
Leakage Current
(SWITCH ON,
OUTPUT OPEN)
Control Input
Current
Quiescent Supply
Current
96
55
45
70
50
45
10
5
5
Ω
Ω
I
OFF
±
0.1
±
1
±
2
µA
I
IZ
±
0.1
±
0.1
1
4
8
±
1
±
1
10
40
80
±
2
±
1
20
80
160
µA
µA
µA
I
IN
I
CC
3/11
M74HC4066
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, Input t
r
= t
f
= 6ns)
Test Condition
Symbol
Parameter
V
CC
(V)
T
A
= 25°C
Min.
Typ.
10
4
3
3
18
8
6
6
20
10
8
8
30
30
30
30
Max.
50
10
8
7
100
20
12
12
115
23
20
18
Value
-40 to 85°C
Min.
Max.
65
13
10
9
125
25
22
18
145
29
25
22
-55 to 125°C
Min.
Max.
75
15
13
10
150
30
27
25
175
35
30
27
Unit
Φ
I/O
Phase Difference
Between Input and
Output
t
PZL
t
PZH
t
PLZ
t
PHZ
2.0
4.5
9.0
12.0
Output Enable Time 2.0
4.5
9.0
12.0
Output Disable
2.0
Time
4.5
9.0
12.0
Maximum Control
2.0
Input Frequency
4.5
9.0
12.0
ns
R
L
= 1K
Ω
ns
R
L
= 1K
Ω
ns
R
L
= 1K
Ω
C
L
= 15 pF
V
OUT
= 1/2 V
CC
MHz
CAPACITIVE CHARACTERISTICS
Test Condition
Symbol
Parameter
V
CC
(V)
T
A
= 25°C
Min.
Typ.
5
6
0.5
15
Max.
10
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
pF
pF
Unit
C
IN
C
I/O
C
IOS
C
PD
Input Capacitance
Switch Terminal
Capacitance
Feed Through
Capacitance
Power Dissipation
Capacitance
(note 1)
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
4/11
M74HC4066
ANALOG SWITCH CHARACTERISTICS
(GND = 0V;T
A
= 25°C)
Symbol
Parameter
V
CC
(V)
Sine Wave
Distortion (THD)
f
MAX
Frequency
Response
(Switch ON)
Feed through
Attenuation (Switch
OFF)
Crosstalk (Control
Input to Signal
Output)
Crosstalk (Between
Any Switches)
4.5
9.0
4.5
9.0
4.5
9.0
4.5
9.0
4.5
9.0
V
IN
(V
p-p
)
4
8
f
IN
= 1 KHz R
L
= 10 K
Ω
, C
L
= 50 pF
Adjust f
IN
voltage to obtain 0 dBm at V
OS
.
Increase f
IN
Frequency until dB meter reads -3dB
R
L
= 50
Ω
, C
L
= 10 pF
V
IN
is centered at V
CC
/2. Adjust input for 0 dBm
R
L
= 600
Ω
C
L
= 50 pF, f
IN
= 1MHz sine wave
R
L
= 600
Ω
, C
L
= 50 pF, f
IN
= 1MHz square wave (t
r
= t
f
=6ns)
Adjust V
IN
to Obtain 0 dBmat input
R
L
= 600
Ω
, C
L
= 50 pF, f
IN
= 1MHz sine wave
Test Condition
Value
Typ.
0.05
0.04
200
200
-60
-60
60
100
-60
-60
%
Unit
MHz
dB
mV
dB
5/11
RF/无线
