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M74HCT125M1R

Buffers u0026 Line Drivers Quad Bus Buffer

器件类别:逻辑    逻辑   

厂商名称:ST(意法半导体)

厂商官网:http://www.st.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
ST(意法半导体)
零件包装代码
SOIC
包装说明
SOP, SOP14,.25
针数
14
Reach Compliance Code
compliant
控制类型
ENABLE LOW
系列
HCT
JESD-30 代码
R-PDSO-G14
JESD-609代码
e4
长度
8.65 mm
负载电容(CL)
150 pF
逻辑集成电路类型
BUS DRIVER
最大I(ol)
0.006 A
位数
1
功能数量
4
端口数量
2
端子数量
14
最高工作温度
125 °C
最低工作温度
-55 °C
输出特性
3-STATE
输出极性
TRUE
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP14,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
包装方法
TUBE
电源
5 V
Prop。Delay @ Nom-Sup
32 ns
传播延迟(tpd)
41 ns
认证状态
Not Qualified
座面最大高度
1.75 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
MILITARY
端子面层
Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
宽度
3.9 mm
文档预览
M74HCT125
QUAD BUS BUFFER (3-STATE)
s
HIGH SPEED:
t
PD
= 13ns (TYP.) at V
CC
= 4.5V
LOW POWER DISSIPATION:
I
CC
= 4µA(MAX.) at T
A
=25°C
COMPATIBLE WITH TTL OUTPUTS :
V
IH
= 2V (MIN.) V
IL
= 0.8V (MAX)
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 6mA (MIN)
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 125
ORDER CODES
PACKAGE
DIP
SOP
TSSOP
TUBE
M74HCT125B1R
M74HCT125M1R
DIP
SOP
TSSOP
s
s
s
s
s
DESCRIPTION
The M74HCT125 is an high speed CMOS QUAD
BUFFER (3-STATE) fabricated with silicon gate
C
2
MOS technology.
The device requires the 3-STATE control input G
to be set high to place the output in to the high
impedance state.
PIN CONNECTION AND IEC LOGIC SYMBOLS
O
so
b
te
le
ro
P
uc
d
s)
t(
so
b
-O
The M74HCT125 is designed to directly interface
HSC
2
MOS systems with TTL and NMOS
components.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
P
te
le
od
r
M74HCT125RM13TR
M74HCT125TTR
s)
t(
uc
T&R
August 2001
1/9
M74HCT125
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
1, 4, 10, 13
2, 5, 9, 12
3, 6, 8, 11
7
14
SYMBOL
1G TO 4G
1A TO 4A
1Y TO 4Y
GND
V
CC
NAME AND FUNCTION
Output Enable Input
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
A
X
L
H
G
H
L
L
Y
Z
L
H
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
Parameter
Value
I
CC
or I
GND
DC V
CC
or Ground Current
P
D
Power Dissipation
T
stg
T
L
Storage Temperature
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
°
C; derate to 300mW by 10mW/
°
C from 65
°
C to 85
°
C
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
O
so
b
V
O
T
op
t
r
, t
f
te
le
Supply Voltage
Input Voltage
Output Voltage
ro
P
uc
d
s)
t(
so
b
-O
P
te
le
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±
20
±
20
±
35
±
70
500(*)
-65 to +150
300
od
r
-0.5 to +7
s)
t(
uc
Unit
V
V
V
mA
mA
mA
mA
mW
°C
°C
Parameter
Value
4.5 to 5.5
0 to V
CC
0 to V
CC
-55 to 125
0 to 500
Unit
V
V
V
°C
ns
Operating Temperature
Input Rise and Fall Time (V
CC
= 4.5 to 5.5V)
2/9
M74HCT125
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
CC
(V)
4.5
to
5.5
4.5
to
5.5
4.5
4.5
5.5
5.5
5.5
5.5
I
O
=-20
µA
I
O
=-6.0 mA
I
O
=20
µA
I
O
=6.0 mA
V
I
= V
CC
or GND
V
I
= V
IH
or V
IL
V
O
= V
CC
or GND
V
I
= V
CC
or GND
Per Input pin
V
I
= 0.5V or
V
I
= 2.4V
Other Inputs at
V
CC
or GND
I
O
= 0
T
A
= 25°C
Min.
2.0
Typ.
Max.
Value
-40 to 85°C
Min.
2.0
Max.
-55 to 125°C
Min.
2.0
Max.
V
Unit
V
IH
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
Low Level Output
Voltage
Input Leakage
Current
High Impedance
Output Leakage
Current
Quiescent Supply
Current
Additional Worst
Case Supply
Current
V
IL
0.8
4.4
4.18
4.5
4.31
0.0
0.17
0.1
0.26
±
0.1
±
0.5
4
2.0
4.4
4.13
0.8
4.4
4.10
0.1
0.33
±
1
±
5
0.8
V
V
OH
V
OL
I
I
I
OZ
V
0.1
0.40
V
µA
I
CC
I
CC
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, Input t
r
= t
f
= 6ns)
Test Condition
Symbol
Parameter
t
TLH
t
THL
Output Transition
Time
t
PLH
t
PHL
Propagation Delay
Time
O
so
b
t
PZL
t
PZH
Output Enable
Time
t
PLZ
t
PHZ
Output Disable
Time
te
le
ro
P
uc
d
V
CC
(V)
4.5
4.5
4.5
4.5
4.5
4.5
C
L
(pF)
50
s)
t(
so
b
-O
Min.
7
13
17
15
19
17
te
le
r
P
od
40
2.9
s)
t(
uc
±
1
±
10
80
3.0
µA
µA
mA
Value
-40 to 85°C
Min.
Max.
15
26
34
30
38
30
-55 to 125°C
Min.
Max.
18
32
41
36
45
36
ns
ns
ns
ns
Unit
T
A
= 25°C
Typ.
Max.
12
21
27
24
30
24
50
150
50
150
50
R
L
= 1 K
R
L
= 1 K
3/9
M74HCT125
CAPACITIVE CHARACTERISTICS
Test Condition
Symbol
Parameter
V
CC
(V)
T
A
= 25°C
Min.
Typ.
5
56
Max.
10
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
Unit
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance (note
1)
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
TEST CIRCUIT
TEST
t
PLH
, t
PHL
t
PZL
, t
PLZ
t
PZH
, t
PHZ
C
L
= 50pF/150pF or equivalent (includes jig and probe capacitance)
R
1
= 1KΩ or equivalent
R
T
= Z
OUT
of pulse generator (typically 50Ω))
O
so
b
te
le
ro
P
uc
d
s)
t(
so
b
-O
P
te
le
od
r
s)
t(
uc
SWITCH
Open
V
CC
GND
4/9
M74HCT125
WAVEFORM 1 : PROPAGATION DELAY TIMES
(f=1MHz; 50% duty cycle)
WAVEFORM 2 : OUTPUT ENABLE AND DISABLE TIMES
(f=1MHz; 50% duty cycle)
O
so
b
te
le
ro
P
uc
d
s)
t(
so
b
-O
P
te
le
od
r
s)
t(
uc
5/9
查看更多>
参数对比
与M74HCT125M1R相近的元器件有:M74HCT125RM13TR。描述及对比如下:
型号 M74HCT125M1R M74HCT125RM13TR
描述 Buffers u0026 Line Drivers Quad Bus Buffer Buffers u0026 Line Drivers Quad Bus Buffer
是否Rohs认证 符合 符合
厂商名称 ST(意法半导体) ST(意法半导体)
零件包装代码 SOIC SOIC
包装说明 SOP, SOP14,.25 SOP-14
针数 14 14
Reach Compliance Code compliant compliant
控制类型 ENABLE LOW ENABLE LOW
系列 HCT HCT
JESD-30 代码 R-PDSO-G14 R-PDSO-G14
JESD-609代码 e4 e4
长度 8.65 mm 8.65 mm
负载电容(CL) 150 pF 50 pF
逻辑集成电路类型 BUS DRIVER BUS DRIVER
最大I(ol) 0.006 A 0.006 A
位数 1 1
功能数量 4 4
端口数量 2 2
端子数量 14 14
最高工作温度 125 °C 125 °C
最低工作温度 -55 °C -55 °C
输出特性 3-STATE 3-STATE
输出极性 TRUE TRUE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP
封装等效代码 SOP14,.25 SOP14,.25
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
包装方法 TUBE TAPE AND REEL
电源 5 V 5 V
Prop。Delay @ Nom-Sup 32 ns 32 ns
传播延迟(tpd) 41 ns 41 ns
认证状态 Not Qualified Not Qualified
座面最大高度 1.75 mm 1.75 mm
最大供电电压 (Vsup) 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V
表面贴装 YES YES
技术 CMOS CMOS
温度等级 MILITARY MILITARY
端子面层 Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式 GULL WING GULL WING
端子节距 1.27 mm 1.27 mm
端子位置 DUAL DUAL
宽度 3.9 mm 3.9 mm
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