M93S46-W M93S56-W
M93S66-W
4 Kbit, 2 Kbit and 1 Kbit serial MICROWIRE bus EEPROM with
write protection
Datasheet - production data
Features
•
•
Compatible with MICROWIRE bus serial
interface
Memory array
−
1 Kbit, 2 Kbit or 4 Kbit of EEPROM
−
Organized by word (16b)
−
Page = 4 words
Write
−
Byte write within 5 ms
−
Page write within 5 ms
−
Ready/busy signal during programming
User defined write protected area
High-speed clock: 2 MHz
Single supply voltage:
2.5 V to 5.5 V
−
Operating temperature range:
-40 °C up to +85 °C.
Enhanced ESD protection
More than 4 million write cycles
More than 200-year data retention
•
PDIP8 (BN)
•
•
•
TSSOP8 (DW)
169 mil width
•
•
•
•
•
Packages
SO8 (MN)
150 mil width
MSv35377V1
•
•
•
PDIP8 ECOPACK
®
1
TSSOP8 ECOPACK
®
2
SO8 ECOPACK
®
2
January 2015
DocID5124 Rev 7
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www.st.com
This is information on a product in full production
Contents
M93S46-W M93S56-W M93S66-W
Contents
1
2
Description ........................................................................................ 5
Signal description ............................................................................ 6
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
Serial data output (Q) ........................................................................ 6
Serial data input (D) .......................................................................... 6
Serial clock (C) .................................................................................. 6
Chip select (S)................................................................................... 6
Protection register (PRE) .................................................................. 6
Write protect (W) ............................................................................... 6
V
SS
ground ........................................................................................ 6
Supply voltage (V
CC
) ......................................................................... 6
2.8.1
2.8.2
2.8.3
2.8.4
Operating supply voltage V
CC
............................................................. 6
Device reset........................................................................................ 7
Power-up conditions ........................................................................... 7
Power-down........................................................................................ 7
3
4
5
Operating features ............................................................................ 8
Clock pulse counter ......................................................................... 9
Instructions ..................................................................................... 10
5.1
5.2
5.3
5.4
5.5
5.6
Read ............................................................................................... 12
Write enable and write disable ........................................................ 12
Write to memory array (WRITE) ...................................................... 13
Page write ....................................................................................... 14
Write all ........................................................................................... 15
Write protection and protect register ............................................... 16
Power-up state ................................................................................ 21
Initial delivery state.......................................................................... 21
6
Power-up and delivery states ........................................................ 21
6.1
6.2
7
8
9
10
11
Maximum ratings ............................................................................ 22
DC and AC parameters .................................................................. 23
Package mechanical data .............................................................. 27
Part numbering ............................................................................... 30
Revision history .............................................................................. 31
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List of tables
List of tables
Table 1: Signal names ................................................................................................................................ 5
Table 2: Instruction set for the M93S46 .................................................................................................... 10
Table 3: Instruction set for the M93S66, M93S56 .................................................................................... 11
Table 4: Absolute maximum ratings ......................................................................................................... 22
Table 5: Operating conditions (M93Sx6-W) ............................................................................................. 23
Table 6: AC test measurement conditions ................................................................................................ 23
Table 7: Capacitance ................................................................................................................................ 23
Table 8: Memory cell data retention ......................................................................................................... 23
Table 9: Cycling performance ................................................................................................................... 24
Table 10: DC Characteristics (M93Sx6-W, device grade 6) ..................................................................... 24
Table 11: AC Characteristics (M93Sx6-W, device grade 6) ..................................................................... 24
Table 12: SO8N – 8-lead plastic small outline, 150 mils body width, package mechanical data ............. 27
Table 13: PDIP8 – 8 lead plastic dual in-line package, 300 mils body width, package mechanical data 28
Table 14: TSSOP8 - 8-lead thin shrink small outline, package mechanical data ..................................... 29
Table 15: Document revision history ........................................................................................................ 31
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List of figures
M93S46-W M93S56-W M93S66-W
List of figures
Figure 1: Logic diagram .............................................................................................................................. 5
Figure 2: 8-pin package connections .......................................................................................................... 5
Figure 3: Write sequence with one clock glitch .......................................................................................... 9
Figure 4: READ sequence ........................................................................................................................ 12
Figure 5: WRITE sequence ...................................................................................................................... 13
Figure 6: WEN and WDS sequences ....................................................................................................... 13
Figure 7: PAWRITE sequence .................................................................................................................. 15
Figure 8: WRAL sequence ........................................................................................................................ 15
Figure 9: PREAD sequence ...................................................................................................................... 18
Figure 10: PRWRITE sequence ............................................................................................................... 18
Figure 11: PREN sequence ...................................................................................................................... 19
Figure 12: PRCLEAR sequence ............................................................................................................... 19
Figure 13: PRDS sequence ...................................................................................................................... 20
Figure 14: AC test measurement I/O waveform ....................................................................................... 23
Figure 15: Synchronous timing (start and op-code input)......................................................................... 25
Figure 16: Synchronous timing (read or write) ......................................................................................... 26
Figure 17: Synchronous timing (read or write) ......................................................................................... 26
Figure 18: SO8N – 8-lead plastic small outline 150 mils body width, package outline ............................ 27
Figure 19: PDIP8 – 8-pin plastic DIP, 0.25 mm lead frame, package outline .......................................... 28
Figure 20: TSSOP8 - 8-lead thin shrink small outline, package outline ................................................... 29
Figure 21: Ordering information scheme .................................................................................................. 30
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M93S46-W M93S56-W M93S66-W
Description
1
Description
The M93S46, M93S56, M93S66 devices are Electrically Erasable PROgrammable
Memories (EEPROMs) organized as 64, 128 or 256 words (one word is 16 bits), accessed
through the MICROWIRE bus.
The M93S46, M93S56, M93S66 can operate with a supply voltage from 2.5 V to 5.5 V over
an ambient temperature range of -40 °C / +85 °C.
Figure 1: Logic diagram
V
CC
D
C
S
PRE
W
V
SS
Figure 2: 8-pin package connections
M93Sx6
S
C
D
Q
1
2
3
4
8
7
6
5
V
CC
PRE
W
V
SS
AI02021B
Q
M93Sx6
AI02020B
1.
See
Section 9: "Package mechanical data"
for package dimensions, and how to
identify pin-1.
Table 1: Signal names
Signal name
Function
Chip select input
Serial data input
Serial data output
Serial clock
Protection register enable
Write enable
Supply voltage
Ground
S
D
Q
C
PRE
W
V
CC
V
SS
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嵌入式系统
