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MA1.5KE180CAE3

TVS DIODE 154V 246V DO204AR

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
包装说明
O-PALF-W2
针数
2
制造商包装代码
CASE 1
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
HIGH RELIABILITY
最大击穿电压
189 V
最小击穿电压
171 V
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
最大非重复峰值反向功率耗散
1500 W
元件数量
1
端子数量
2
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
BIDIRECTIONAL
最大功率耗散
1.52 W
认证状态
Not Qualified
最大重复峰值反向电压
154 V
表面贴装
NO
技术
AVALANCHE
端子面层
MATTE TIN
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
M1.5KE6.8A – M1.5KE400CA(e3)
Screening in
reference to
MIL-PRF-19500
available
Available
1500 Watt Unidirectional and Bidirectional
Transient Voltage Suppressor
DESCRIPTION
The popular Transient Voltage Suppressor series of M1.5KE6.8 – M1.5KE400CA with its
various upscreening options offer an extended voltage range and provides a wide variety of
commercial, high reliability, RoHS and bidirectional options. All have the same high peak
pulse power rating of 1500 W and extremely fast response time. They can protect from
secondary effects of lightning per IEC61000-4-5 and the class levels as shown below as well
as voltage transients from inductive switching and RFI. Since their response time is virtually
instantaneous, they also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
High reliability devices with fabrication and assembly lot traceability
Economical plastic encapsulated TVS series for thru-hole mounting
3σ lot norm screening performed on standby current (I
D
)
100% surge tested devices suppress transients up to 1500 watts @ 10/1000 µs (see
figure 1)
Enhanced reliability screening available in reference to MIL-PRF-19500. Refer to
Hirel Non-
Hermetic Product Portfolio
for more details on the screening options.
(See
part nomenclature
for all options.)
Enhanced reliability source controlled devices have wafer fabrication and assembly lot traceability
Moisture classification is “Level 1” with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant versions available
Case 1 Package
APPLICATIONS / BENEFITS
High-reliability devices
Protection from switching and RFI induced transients
Compliant to IEC 61000-4-2 and IEC 61000-4-4 for ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5 with 42 ohms source impedance:
Class 1: M1.5KE6.8A to M1.5KE200CA
Class 2: M1.5KE6.8A to M.5KE180CA
Class 3: M1.5KE6.8A to M1.5KE91CA
Class 4: M1.5KE6.8A to M1.5KE43CA
Secondary lightning protection per IEC61000-4-5 with 12 ohms source impedance:
Class 1: M1.5KE6.8A to M1.5KE110CA
Class 2: M1.5KE6.8A to M1.5KE56CA
Class 3: M1.5KE6.8A to M1.5KE27CA
Class 4: M1.5KE6.8A to M1.5KE13CA
Secondary lightning protection per IEC61000-4-5 with 2 ohms source impedance:
Class 2: M1.5KE6.8A to M1.5KE24CA
Class 3: M1.5KE6.8A to M1.5KE12CA
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01008, Rev. E (11/15/13)
©2013 Microsemi Corporation
Page 1 of 7
M1.5KE6.8A – M1.5KE400CA(e3)
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction to Lead @ 0.375 inch (10
mm) from body
(1)
Thermal Resistance, Junction to Ambient
(2)
Peak Pulse Power @ T
L
= +25 ºC
Rated Average Power Dissipation
@ T
L
= +40 ºC
@ T
A
= +25 ºC
Unidirectional
T
clamping
(0 volts to V
(BR)
min)
Bidirectional
Surge Peak Forward Current
Solder Temperature @ 10 s
(3)
Symbol
T
J
and T
STG
R
ӨJL
R
ӨJA
P
PP
P
M(AV)
Value
-65 to +150
22
82
1500
5
(1)
1.52
< 100
<5
200
260
Unit
ºC
ºC/W
ºC/W
W
W
ps
ns
A
o
I
FSM
T
SP
C
Notes:
1. When mounted on FR4 PC board with 4 mm
2
copper pads (1 oz) and track width 1 mm, length 25 mm.
2. At 10/1000
µs
with repetition rate of 0.01% or less (see
Figure 1).
3. At 8.3 ms half-sine wave for unidirectional devices only.
MECHANICAL and PACKAGING
CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0
TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating readily solderable per MIL-STD-750 method 2026
MARKING: Part number and polarity band
POLARITY: Cathode indicated by band. No cathode band on bidirectional devices.
TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities.
WEIGHT: Approximately 1.5 grams
See
Package Dimensions
on last page.
PART NOMENCLATURE
M
Reliability Level*
M
MA
MX
MXL
(*See
Hirel Non-Hermetic
Product Portfolio)
Peak Pulse Power
Kilowatt Rating
Encapsulated Plastic Package
1.5
K
E
6.5
C
A
(e3)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
+/- 5% Tolerance Level
Polarity
C = Bi-directional
Blank = Unidirectional
Nominal Breakdown Voltage
(See
Electrical Characteristics
table)
RF01008, Rev. E (11/15/13)
©2013 Microsemi Corporation
Page 2 of 7
M1.5KE6.8A – M1.5KE400CA(e3)
SYMBOLS & DEFINITIONS
Definition
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature that caused it expressed in %/°C or mV/°C.
Breakdown Current: The current used for measuring breakdown voltage V
(BR)
.
Breakdown Voltage: The voltage across the device at a specified current I
(BR)
in the breakdown region.
Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (I
PP
) for a specified waveform.
Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The
impulse power is the maximum-rated value of the product of I
PP
and V
C
.
Standby Current: The current through the device at rated stand-off voltage.
Symbol
α
V(BR)
I
(BR)
V
(BR)
V
WM
V
C
I
PP
P
PP
I
D
RF01008, Rev. E (11/15/13)
©2013 Microsemi Corporation
Page 3 of 7
M1.5KE6.8A – M1.5KE400CA(e3)
ELECTRICAL CHARACTERISTICS
@ 25
o
C
Rated
Standoff
Voltage
V
WM
(Note 1)
Volts
M1.5KE6.8A
M1.5KE7.5A
M1.5KE8.2A
M1.5KE9.1A
M1.5KE10A
M1.5KE11A
M1.5KE12A
M1.5KE13A
M1.5KE15A
M1.5KE16A
M1.5KE18A
M1.5KE20A
M1.5KE22A
M1.5KE24A
M1.5KE27A
M1.5KE30A
M1.5KE33A
M1.5KE36A
M1.5KE39A
M1.5KE43A
M1.5KE47A
M1.5KE51A
M1.5KE56A
M1.5KE62A
M1.5KE68A
M1.5KE75A
M1.5KE82A
M1.5KE91A
M1.5KE100A
M1.5KE110A
M1.5KE120A
M1.5KE130A
M1.5KE150A
M1.5KE160A
M1.5KE170A
M1.5KE180A
M1.5KE200A
M1.5KE220A
M1.5KE250A
M1.5KE300A
M1.5KE350A
M1.5KE400A
5.80
6.40
7.02
7.78
8.55
9.40
10.22
11.10
12.80
13.60
15.30
17.10
18.80
20.50
23.10
25.60
28.20
30.80
33.30
36.80
40.20
43.60
47.80
53.00
58.10
64.10
70.10
77.80
85.50
94.00
102.00
111.00
128.00
136.00
145.00
154.00
171.00
185.00
214.00
256.00
300.00
324.00
Breakdown
Voltage
Maximum
Clamping
Voltage
V
C
@ I
PP
Maximum
Standby
Current
I
D
@ V
WM
Maximum
Peak Pulse
Current
I
PP
(Fig. 2)
A
143.0
132.0
124.0
112.0
103.0
96.0
90.0
82.0
71.0
67.0
59.5
54.0
49.0
45.0
40.0
36.0
33.0
30.0
28.0
25.3
23.2
21.4
19.5
17.7
16.3
14.6
13.3
12.0
11.0
9.9
9.1
8.4
7.2
6.8
6.4
6.1
5.5
4.6
5.0
5.0
4.0
4.0
Maximum
Temperature
Coefficient of
V
(BR)
αV
(BR)
%/
o
C
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.090
0.092
0.094
0.096
0.097
0.098
0.099
0.100
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.111
0.111
0.111
Industry
Type
Number
V
(BR)
@
Volts
Min. Max.
6.45 – 7.14
7.13 – 7.88
7.79 – 8.61
8.65 – 9.55
9.50 – 10.50
10.50 – 11.60
11.40 – 12.60
12.40 – 13.70
14.30 – 15.80
15.20 – 16.80
17.10 – 18.90
19.00 – 21.00
20.90 – 23.10
22.80 – 25.20
25.70 – 28.40
28.50 – 31.50
31.40 – 34.70
34.20 – 37.80
37.10 – 41.00
40.90 – 45.20
44.70 – 49.40
48.50 – 53.60
53.20 – 58.80
58.90 – 65.10
64.60 – 71.40
71.30 – 78.80
77.90 – 86.10
86.50 – 95.50
95.00 – 105.00
105.00 – 116.00
114.00 – 126.00
124.00 – 137.00
143.00 – 158.00
152.00 – 168.00
162.00 – 179.00
171.00 – 189.00
190.00 – 210.00
209.00 – 231.00
237.00 – 263.00
285.00 – 315.00
332.00 – 368.00
380.00 – 420.00
I
(BR)
mA
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Volts
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103.0
113.0
125.0
137.0
152.0
165.0
179.0
207.0
219.0
234.0
246.0
274.0
328.0
344.0
414.0
482.0
548.0
µA
1000
500
200
50
10
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
NOTES:
1. Normal selection criteria for TVS devices is by rated stand-off voltage (V
WM
) and should be equal or greater than dc or continuous peak
operating voltage.
2. TVS devices are tested to maximum peak pulse current (I
PP
) with clamping voltage monitored. This surge capability is one of the most
significant electrical characteristics of the device and should be considered as part of customer quality inspections.
3. For Bidirectional types having V
WM
of 8 volts and under, the I
D
leakage current is doubled. Also for bidirectional parts, the capacitance
will be half that shown in Fig. 2 for zero bias.
4. For unidirectional, the forward voltage (V
F
) is 3.5 volts maximum at 100 Amps peak for 8.3 ms half-sine wave.
RF01008, Rev. E (11/15/13)
©2013 Microsemi Corporation
Page 4 of 7
M1.5KE6.8A – M1.5KE400CA(e3)
GRAPHS
P
PP
- Peak Pulse Power - kW
Pulse Time (tw) in µs
FIGURE 1
Peak Pulse Power vs Pulse Time (tw) in µs
Pulse Current in Percent of I
PP
t – Time – ms
Test waveform parameters: tr=10 µs, tp=1000µs
FIGURE 2
Pulse Waveform for 10/1000 Exponential Surge
RF01008, Rev. E (11/15/13)
©2013 Microsemi Corporation
Page 5 of 7
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