Silicon Beam Lead
Schottky Barrier Diodes
Features
q
q
q
q
MA40130 Series
V3.00
Case Style 965
Planar Construction (Surface Oriented Diode)
Strong Beam Construction
Low Noise Figure (Mixer Diodes)
Low, Medium and High Barrier Diodes Available
Description
The MA40130 series of beam lead Schottky diodes has
both the Schottky junction and ohmic contact in the same
plane. This makes them convenient for bonding into
microstrip circuits. The Schottky junction is passivated
with silicon oxide and silicon nitride to give stable
reliable performance.
Absolute Maximum Ratings at 25°C
Parameter
Operating Temperature
Storage Temperature
Incident CW RF Power
Incident RF Pulse Power
(3ns pulse width, .001 duty cycle)
Absolute Maximum
-65°C to + 150°C
-65°C to + 150°C
75 mW
1W
2g
Beam Strength
Electrical Specifications at 25°C
Maximum
1
Junction
Capacitance
C
j
(pF)
0.2
0.1
0.1
0.1
Typical
2
Forward
Voltage
V
F
(Volts)
0.28
0.31
0.41
0.61
Minimum
Reverse
Voltage
V
R
2
2
3
5
5
Model
Number
MA40132
MA40131
MA40133
MA40135
Barrier
Height
Low
Low
Medium
High
Frequency
Band
X
Ku
Ku
Ku
Maximum
Resistance
R
S
(Ohms)
10
15
15
15
3
Nominal
4
Noise
Figure
NF
(dB)
6.5
7.5
7.5
7.5
Notes:
1. C
j
is measured at V
R
= 0V and F = 1.0 MHz.
2. V
F
is measured at I
F
= 1.0 mA.
3. Series resistance, R
S
, is determined by subtracting the junction
resistance, R
j
from the measured value of 10 mA dynamic (slope)
resistance, R
T
:
R
S
= R
T
- R
j
Ohms
Junction resistance is computed from:
R
J
= 26/l
F
I
F
= 10 mA
I
F
is the forward current in mA.
4. Noise figure measurements are performed on single diodes sampled
from every wafer lot. The noise figure specified is the maximum limit for
lot approval. The test conditions are as follows:
LO Power = 1.0 mW low and medium barrier, 2.0 mW for high barrier
LO Frequency — 9.375 GHz (X-Band)
16 GHz (Ku-Band)
I
F
= 30 MHz
NF
IF
= 1.5 dB
5. V
R
is measured at I
R
= 10µA
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
s
1
Asia/Pacific: Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
s
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
Silicon Beam Lead Schottky Barrier Diodes
Typical Performance Curves
LOW BARRIER SCHOTTKY DIODE FORWARD
CHARACTERISTICS vs TEMPERATURE
MA40130 Series
V3.00
MEDIUM BARRIER SCHOTTKY DIODE FORWARD
CHARACTERISTICS vs TEMPERATURE
HIGH BARRIER SCHOTTKY DIODE FORWARD
CHARACTERISTICS vs TEMPERATURE
NOISE FIGURE vs LOCAL OSCILLATOR POWER
Specifications Subject to Change Without Notice.
2
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
s
M/A-COM, Inc.
Asia/Pacific: Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
s
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
Silicon Beam Lead Schottky Barrier Diodes
Typical Admittance Characteristics With Self Bias
MEDIUM BARRIER AND HIGH BARRIER DIODES
MA40133 AND MA40135
MA40130 Series
V3.00
Case Style 965
A
D
C
DIM.
A
B
B
C
D
E
Cathode
F
E
F
MIN.
0.0270
0.0050
0.0130
0.0122
0.0010
0.00025
INCHES
MAX.
0.0290
0.0060
0.0140
0.0132
0.0015
0.0003
MILLIMETERS
MIN.
0,686
0,127
0,330
0,310
0,0254
0,00635
MAX.
0,737
0,152
0,356
0,335
0,038
0,00762
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
s
3
Asia/Pacific: Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
s
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
