Arsenide, single pole, double throw (SPDT), PIN diode
switch. The switch features enhanced AlGaAs anodes
which are formed using MACOM’s hetero-junction
technology. AlGaAs technology produces a switch with
less loss than a device fabricated using conventional
GaAs processes. As much as a 0.3 dB reduction in
insertion loss can be realized at 50 GHz. This device is
fabricated on an OMCVD epitaxial wafer using a
process designed for high device uniformity and
extremely low parasitics. The diodes within the chip
exhibit low series resistance, low capacitance, and fast
switching speed. They are fully passivated with silicon
nitride and have an additional polymer layer for scratch
protection. The protective coating prevents damage
during handling and assembly
to the diode junction and
the chip anode air-bridges. Off chip bias circuitry is
required.
Absolute Maximum Ratings @ T
AMB
= +25°C
Parameter
Operating Temperature
Storage Temperature
Incident C.W. RF Power
Breakdown Voltage
Bias Current
Assembly Temperature
Junction Temperature
Maximum Rating
-55°C to +125°C
-55°C to +150°C
+23dBm C.W.
25V
± 25mA
+300°C < 10 sec
+175°C
APPLICATIONS
The high electron mobility of AlGaAs and the low
capacitance of the PIN diodes used makes this switch
ideal for fast response, high frequency, multi-throw
switch designs. AlGaAs PIN diode switches are an
ideal choice for switching arrays in radar systems,
radiometers, test equipment and other multi-assembly
components.
Maximum combined operating conditions for RF Power, D.C.
bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @
+85°C.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW2
SPDT AlGaAs PIN Diode Switch
V6
Electrical Specifications @ T
A
= 25°C, +/-10mA bias current
(On-wafer measurements)
RF SPECIFICATIONS
PARAMETER
INSERTION LOSS
FREQUENCY BAND
0.05 - 18GHz
18 - 50GHz
0.05 - 18GHz
18 - 50GHz
0.05 - 18GHz
18 - 50GHz
0.05 - 18GHz
18 - 50GHz
10GHZ
MIN
---
---
45
28
---
---
---
---
---
TYP
0.5
0.7
47
33
22
21
25
22
20
MAX
0.6
0.9
---
---
---
---
---
---
---
UNITS
dB
dB
dB
dB
dB
dB
dB
dB
nS
ISOLATION
INPUT RETURN LOSS
OUTPUT RETURN LOSS
SWITCHING SPEED
( 10 % - 90 % RF VOLTAGE )
*
*Note:
Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL
compatible driver. Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and
a resistor between 150 - 220 Ohms to achieve 20 ns rise and fall times.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW2
SPDT AlGaAs PIN Diode Switch
V6
Typical R.F. Performance (Probed on Wafer) @ +25°C
TYPICAL INSERTION LOSS @ -10 mA
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1
0.00
IL ( dB )
5.00
10.00
15.00
20.00
25.00
30.00
35.00
40.00
45.00
50.00
FREQUENCY ( GHz )
J2
J3
TYPICAL ISOLATION @ +10 mA
0
-10
-20
ISOL ( dB )
-30
-40
-50
-60
-70
-80
0.00
5.00
10.00
15.00
20.00
25.00
30.00
35.00
40.00
45.00
50.00
FREQUENCY ( GHz )
J2
3
J3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW2
SPDT AlGaAs PIN Diode Switch
V6
Typical RF Performance (Probed on wafer) @ +25°C
TYPICAL OUTPUT RETURN LOSS @ -10 mA
0
-5
ORL ( dB )
-10
-15
-20
-25
-30
0.00
5.00
10.00
15.00
20.00
25.00
30.00
35.00
40.00
45.00
50.00
FREQUENCY ( GHz )
J2
J3
TYPICAL INPUT RETURN LOSS @ -10 mA
0
-5
IRL ( dB )
-10
-15
-20
-25
-30
0.00
5.00
10.00
15.00
20.00
25.00
30.00
35.00
40.00
45.00
50.00
FREQUENCY ( GHz )
J2
4
J3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW2
SPDT AlGaAs PIN Diode Switch
V6
Operation of the MA4AGSW2 Switch
The simultaneous application of a negative DC current to the low loss port and positive DC current to the
remaining isolated switching port is required for the operation of the MA4AGSW2, AlGaAs, PIN switch. The
backside area of the die is the RF and DC return ground plane. The DC return is connected to the common port
J1. The forward bias voltage at J2 & J3 will not exceed ±1.6 volts and is typically ± 1.4 volts with supply current of
± 30mA). In the low loss state, the series diode must be forward biased and the shunt diode reverse biased. While
for the Isolated port, the shunt diode is forward biased and the series diode is reverse biased. The bias network
design shown below should yield > 30 dB RF to DC Isolation.
The lowest insertion loss, P1dB, IP
3
, and switching speed is achieved by using a voltage pull-up resistor in the DC
return path, (J1). A minimum value of | -2V | is recommended at this return node, which is achievable with a
standard, ± 5V TTL Controlled PIN Diode Driver.
MA4AGSW2 Schematic with a Typical External 2-18 GHz Bias Network
TYPICAL DRIVER CONNECTIONS
CONTROL LEVEL (DC CURRENT)
J2
J3
-10mA
+10mA
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
