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MA4TD0970PIN

0MHz - 4500MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

器件类别:无线/射频/通信    射频和微波   

厂商名称:TE Connectivity(泰科)

厂商官网:http://www.te.com

下载文档
器件参数
参数名称
属性值
厂商名称
TE Connectivity(泰科)
Reach Compliance Code
unknown
Is Samacsys
N
特性阻抗
50 Ω
构造
COMPONENT
最大输入功率 (CW)
20 dBm
最大工作频率
4500 MHz
最小工作频率
射频/微波设备类型
WIDE BAND LOW POWER
最大电压驻波比
1.4
Base Number Matches
1
文档预览
Silicon Bipolar MMIC
Cascadable Amplifier
Features
q
q
q
q
q
q
MA4TD0970
V2.00
Gold-Ceramic Microstrip Package Outline
1,2
.040
1,02
4
GND
Cascadable 50
Gain Block
3dB Bandwidth: DC to 4.5 GHz
8.0 dB Typical Gain @ 1.0 GHz
Low VSWR: <1.5:1 from 0.1 to 3.0 GHz
Hermetic Gold-Ceramic Microstrip Package
Tape and Reel Packaging Available
RF INPUT
1
RF OUT
AND BIAS
3
.020
0,51
Description
M/A-COM’s MA4TD0970 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
stripline package. The MA4TD0970 is designed to use
where a general purpose broad band (4.5 GHz) 50
gain block is required. Typical applications include nar-
row and wide band IF and RF amplifiers in industrial
and military applications.
The MA4TD0970 is fabricated using a 10 GHz f
T
silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
12
10
2
.070
1,78
GND
.035
0,89
.004±.002
0,1±0,05
.495
±.030
12,57±0,76
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx = ±.005; mm .xx = ±.13
TYPICAL POWER GAIN vs FREQUENCY
Pin Configuration
Pin Number
1
2&4
3
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
GAIN (dB)
8
6
4
2
0
0.1
1
Id=35mA
Ordering Information
10
FREQUENCY (GHz)
Model No.
MA4TD0970 PIN
MA4TD0970 TR
Package
Ceramic
Forward Tape and Reel
Electrical Specifications
@ T
A
= +25°C, I
d
= 35 mA; Z
0
= 50Ω
Symbol
Gp
∆Gp
f
3 dB
SWR
in
SWR
out
P
1 dB
NF
IP
3
t
D
V
d
dV/dT
Parameters
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Input SWR
Output SWR
Output Power @ 1 dB Gain Compression
50
Noise Figure
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
Specifications Subject to Change Without Notice.
Test Conditions
f = 0.1 GHz
f = 0.1 to 3.0 GHz
-
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
-
-
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
Min.
7.0
-
-
-
-
-
-
-
-
7.0
-
Typ.
8.0
±0.4
4.5
1.9
1.4
11.5
6.0
23.0
100
7.8
-16.0
Max.
9.0
±0.6
-
-
-
-
-
-
-
8.6
-
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
s
1
Asia/Pacific: Tel. +81 3 3263 8761
Fax +81 3 3263 8769
s
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
Silicon Bipolar MMIC Cascadable Amplifier
Absolute Maximum Ratings
1
Parameter
Device Current
Power Dissipation
2,3
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
80 mA
750 mW
+20 dBm
200°C
-65°C to +150°C
C (DC Block)
IN
1
2
MA4TD0970
MA4TD0970
V2.00
Typical Bias Configuration
Rbias
Id = Vcc - Vd
Rbias
RFC (Optional)
4
3
C (DC Block)
OUT
Vd = 7.8 V
Vcc > 10 V
Thermal Resistance:
θjc
= 145°C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25°C.
3. Derate at 6.9 mW/°C for Tc > 91°C.
Typical Performance Curves
@ I
d
= 35 mA, T
A
= +25°C (unless otherwise noted)
Id, DEVICE CURRENT (mA)
60
50
40
30
20
10
0
0
2
4
6
8
10
DEVICE CURRENT vs DEVICE VOLTAGE
0
RETURN LOSS vs FREQUENCY
RETURN LOSS (dB)
-5
-10
Input
-15
Output
-20
-25
0.1
1
10
Vd, DEVICE VOLTAGE (V)
FREQUENCY (GHz)
POWER GAIN vs CURRENT
9
f=0.1 GHz
8
16
P
OUT
@ -1dB GAIN COMPRESSION
vs FREQUENCY
P
OUT
- 1dB (dBm)
14
12
10
8
6
4
2
Id=25mA
Id=45mA
Id=35mA
GAIN (dB)
7
f=2.0 GHz
6
5
4
10
20
30
40
50
0
0.1
1
10
Id, DEVICE CURRENT (mA)
FREQUENCY (GHz)
Specifications Subject to Change Without Notice.
2
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
s
M/A-COM, Inc.
Asia/Pacific: Tel. +81 3 3263 8761
Fax +81 3 3263 8769
s
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
Silicon Bipolar MMIC Cascadable Amplifier
NOISE FIGURE vs FREQUENCY
7
-7
MA4TD0970
V2.00
REVERSE ISOLATION vs FREQUENCY
REVERSE ISOLATION (dB)
-8
-9
-10
-11
-12
-13
-14
-15
0.1
1
10
NOISE FIGURE (dB)
6.5
Id=35mA
Id=45mA
Id=25mA
6
5.5
5
0.1
1
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Typical Scattering Parameters
Z
0
= 50Ω, T
A
= +25°C, I
d
= 35 mA
Frequency
(GHz)
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
6.0
Mag.
0.164
0.162
0.158
0.153
0.148
0.144
0.131
0.116
0.104
0.106
0.127
0.164
0.212
0.266
0.365
S
11
Angle
-166.6
-169.8
-176.5
175.9
167.9
162.1
151.8
147.0
149.7
157.1
162.0
161.4
154.1
144.6
123.0
Mag.
2.38
2.37
2.35
2.33
2.31
2.30
2.28
2.27
2.24
2.17
2.06
1.93
1.78
1.64
1.35
S
21
Angle
163.7
162.8
160.2
156.7
152.2
146.7
132.1
117.4
102.2
87.2
73.2
60.6
49.4
39.1
23.7
Mag.
0.214
0.214
0.215
0.216
0.218
0.220
0.227
0.236
0.248
0.259
0.269
0.276
0.280
0.281
0.275
S
12
Angle
5.4
5.4
5.8
6.5
7.3
8.7
12.0
15.0
17.2
18.6
19.2
19.6
19.4
19.7
21.5
Mag.
0.186
0.187
0.189
0.194
0.201
0.213
0.246
0.280
0.304
0.313
0.315
0.308
0.313
0.323
0.381
S
22
Angle
-158.0
-159.4
-162.3
-165.6
-169.4
-171.1
-176.1
175.4
165.5
155.3
147.3
142.6
140.2
139.7
138.6
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
s
3
Asia/Pacific: Tel. +81 3 3263 8761
Fax +81 3 3263 8769
s
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
查看更多>
参数对比
与MA4TD0970PIN相近的元器件有:MA4TD0970TR。描述及对比如下:
型号 MA4TD0970PIN MA4TD0970TR
描述 0MHz - 4500MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 0MHz - 4500MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
厂商名称 TE Connectivity(泰科) TE Connectivity(泰科)
Reach Compliance Code unknown unknown
特性阻抗 50 Ω 50 Ω
构造 COMPONENT COMPONENT
最大输入功率 (CW) 20 dBm 20 dBm
最大工作频率 4500 MHz 4500 MHz
射频/微波设备类型 WIDE BAND LOW POWER WIDE BAND LOW POWER
最大电压驻波比 1.4 1.4
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