Large conversion gain GC and optimum for UHF mixer
matic insertion through taping
0.4±0.15
1.7±0.1
2.5±0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
S-Mini package, enabling down-sizing of the equipment and auto-
Parameter
Symbol
V
R
V
F
T
j
Rating
5
0.5
Unit
V
V
0 to 0.05
s
Absolute Maximum Ratings
(Ta= 25˚C)
Reverse voltage (DC)
Forward voltage
Junction temperature
Storage temperature
T
stg
– 55 to + 125
isc
Reverse current (DC)
I
R
on
Forward current (DC)
I
F
tin
Parameter
Symbol
ue
di
s
Electrical Characteristics
(Ta= 25˚C)
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0.9±0.1
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
125
˚C
˚C
Marking Symbol : 5B
Condition
min
35
typ
max
100
35
0.16
-0.06
+0.1
0.3
-0.05
+0.1
Unit
mA
µA
V
V
pF
dB
V
V
F
= 0.5V
V
R
= 5V
ce
/D
Forward voltage (DC)
Terminal capacitance
Conversion gain
V
F
C
t
I
F
= 2mA
I
R
=1mA
0.25
0.85
–5
an
Reverse yield voltage (DC)
V
(BR)R
5
Ma
int
en
V
R
= 0.5V, f =1MHz
0.65
–7
1.05
R
F
= 890MHz, – 30dBm
GC*
1, 2
L
O
= 935MHz, +10dBm
I
F
= 45MHz
Note 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on charge of a human body and leakage
from the equipment used.
2. Rated input/output frequency : 935MHz
3. *
1
Judgement is to be made per each chip lot. Sampling of LTPD= 20% and n=11 is guaranteed.
*
2
GC= –7dB min. Any substandard product will be negotiated by both parties.
s
Marking
5B
Pl
Static breakdown strength
C= 100pF Breakdown judgment point I
R
≥
35µA
100
200
1.25±0.1
Small forward voltage V
F
Static breakdown
I
F
(mA)
V
B
(V)
Forward current
10
–1
100
200
300
10
3
10
2
10
1
0
0
10
0.4
Forward voltage
10
2
0.8
1.2
Capacitor capacitance
I
F
– V
F
V
B
– C
V
F
10
3
1.6
C
(V)
2.0
Ma
int
en
(pF)
Ta=25˚C
an
10
4
2.4
Schottky Barrier Diodes (SBD)
ce
/D
isc
10
–1
on
Conversion Gain
GC
(dB)
Reverse current
I
R
(
µA
)
10
3
10
2
10
10
–2
0
1
–20
–16
–12
–8
–4
tin
0
–24
–20
ue
4
Pl
–10
0
Local input power
di
8
Reverse voltage
I
R
– V
R
10
GC – P
LOC
M
Di ain
sc te
on na
tin nc
ue e/
d
12
V
R
(V)
Ta=25˚C
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P
LOC
20
(dBm)
30
Ta=25˚C
16
Terminal capacitance
C
t
(pF)
10
2
10
–1
10
1
10
–2
10
–2
10
–1
Reverse voltage
C
t
– V
R
1
V
R
(V)
f=1MHz
Ta=25˚C
MA733
10
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
