MAAPGM0021
Amplifier, Power, 2W
5.0—8.5 GHz
Features
♦
♦
♦
♦
♦
2 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
MSAG™ Process
High Performance Ceramic Bolt Down Package
RoHS Compliant
M/A-COM Products
Final:
Rev E
Primary Applications
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♦
♦
APGM0021
YWWXXX
Multiple Band Point-to-Point Radio
SatCom
ISM Band
Description
The
MAAPGM0021
is a 2-stage 2 W power amplifier with on-chip bias net-
works in a bolt down ceramic package, allowing easy assembly. This product
is fully matched to 50 ohms on both the input and output. It can be used as a
power amplifier stage or as a driver stage in high power applications.
Each device is 100% RF tested to ensure performance compliance. The part is
fabricated using M/A-COM’s GaAs Multifunction Self-Aligned Gate MESFET
Process.
M/A-COM’s MSAG™ process features robust silicon-like manufacturing proc-
esses, planar processing of ion implanted transistors and multiple implant ca-
pability enabling power, low-noise, switch and digital FETs on a single chip.
The use of refractory metals and the absence of platinum in the gate metal for-
mulation prevents hydrogen poisoning when employed in hermetic packaging.
Pin Number
1
2
3
4
5
6
7
8
9
10
RF Designator
No Connection
V
GG
RF IN
V
GG
No Connection
No Connection
V
DD
RF OUT
V
DD
No Connection
Ordering Information
Description
Part Number
Die
MAAPGM0021-DIE
Sample Board
(Ceramic Package)
MAAPGM0021-SMB
Plastic Package
MAAP-000021-PKG003
Sample Board
Plastic Package
MAAP-000021-SMB003
Sample Board
(Die)
MAAP-000021-SMB004
Maximum Ratings
1
Parameter
Input Power
Drain Supply Voltage
Gate Supply Voltage
Quiescent Drain Current (No RF)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
Storage Temperature
1
Symbol
P
IN
V
DD
V
GG
I
DQ
P
DISS
T
J
T
STG
Absolute Maximum
23.0
+12.0
-3.0
950
9.5
170
-55 to +150
Units
dBm
V
V
mA
W
°C
°C
1. Operation beyond these limits may result in permanent damage to the part.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
volume is not guaranteed.
information contained herein without notice.
MAAPGM0021
Amplifier, Power, 2W
5.0—8.5 GHz
Recommended Operating Conditions
2
Characteristic
Drain Supply Voltage
Gate Supply Voltage
Input Power
Thermal Resistance
Case Temperature
Symbol
V
DD
V
GG
P
IN
Θ
JC
T
C
Min
4.0
-2.4
Typ
8.0
-1.7
18
14.9
Note 3
Max
10.0
-1.3
21.0
Unit
V
V
dBm
°C/W
°C
M/A-COM Products
Final:
Rev E
2. Operation outside of these ranges may reduce product reliability.
3. Maximum Package Case Temperature = 170°C —
Θ
J C
* V
DD
* I
DQ
Electrical Characteristics: T
C
= 40°C, Z
0
= 50
Ω,
V
DD
= 8V, I
DQ
= 600 mA
4
, P
in
= 18 dBm, R
G
= 120Ω
Parameter
Bandwidth
Output Power
Output Power @ 7 GHz
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
Small Signal Gain @ 7 GHz
Input VSWR
Input VSWR @ 7 GHz
Output VSWR
Gate Supply Current
Gate Supply Current @ 7 GHz
Drain Supply Current
Drain Supply Current @ 7 GHz
Noise Figure
2
nd
Harmonic
3 Harmonic
Output Third Order Intercept
3
rd
Order Intermodulation Distortion,
Single Carrier Level = 23 dBm
5
th
Order Intermodulation Distortion,
Single Carrier Level = 23 dBm
rd
Symbol
f
POUT
POUT
PAE
P1dB
G
G
VSWR
VSWR
VSWR
I
GG
I
GG
I
DD
I
DD
NF
2f
3f
OTOI
IM3
IM5
Minimum
—
31.5
32
—
—
14
17.5
—
1.2*
—
-10
-10
—
0.6*
—
—
—
—
—
—
Typical*
5.0-8.5
33
33
30
32
17
20
1.6
1.4
2:1
0
0
0.9
0.8
9.5
-20
-45
40
-10
-25
Maximum
—
—
34*
—
—
—
22*
2.6
1.8
—
10
10
1.2
1.0
—
—
—
—
—
—
Units
GHz
dBm
dBm
%
dBm
dB
dB
—
—
—
mA
mA
A
A
dB
dBc
dBc
dBm
dBm
dBm
4. Adjust V
GG
between –2.4 to-1.3 to achieve indicated I
DQ
.
5. *Not screened—shown to indicate range of expected values.
Operating Instructions
This device is static sensitive. Please handle with care. To operate the device,
follow these steps.
1.
2.
3.
4.
5.
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
volume is not guaranteed.
Apply V
GG
= -1.7 V, V
DD
= 0 V.
Ramp V
DD
to desired voltage, typically 8 V.
Adjust V
GG
to set I
DQ
, (approxmately @ –1.7V).
Set RF input.
Power down sequence in reverse. Turn gate voltage off last.
information contained herein without notice.
MAAPGM0021
Amplifier, Power, 2W
5.0—8.5 GHz
50
POUT
PAE
M/A-COM Products
Final:
Rev E
50
40
35
30
40
40
POUT (dBm)
PAE(%)
30
30
P1dB (dBm)
25
20
15
VDD = 4
VDD = 8
VDD = 6
VDD = 10
20
20
10
10
10
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
0
5
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency
at V
DD
= 8V and P
in
= 18 dBm
Frequency (GHz)
Figure 2. 1dB Compression Point vs. Drain Voltage
40
35
30
1.2
1.0
POUT (dBm)
25
20
15
10
5
0
-4
-2
0
2
4
6
8
10
12
14
16
18
20
5.0 GHz
7.0 GHz
8.5 GHz
0.8
IDS (A)
0.6
0.4
5.0 GHz
7.0 GHz
8.5 GHz
0.2
0.0
-4
-2
0
2
4
6
8
10
12
14
16
18
20
PIN (dBm)
Figure 3. Output Power vs. Input Power
at V
DD
= 8V
Frequency (GHz)
Figure 4. Drain Current vs. Input Power
at V
DD
= 8V
50
POUT
40
PAE
50
30
Gain
Input VSWR
Output VSWR
6
40
25
5
POUT (dBm)
Gain (dB)
PAE(%)
20
20
15
3
10
10
10
2
0
4
5
6
7
8
9
10
0
5
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
Frequency (GHz)
1
Drain Voltage (volts)
Figure 5. Saturated Output Power and Power Added Efficiency vs. Drain Voltage
at f
o
= 7 GHz
Figure 6. Small Signal Gain and VSWR vs. Frequency at VDD = 8V.
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
volume is not guaranteed.
information contained herein without notice.
VSWR
30
30
20
4
MAAPGM0021
Amplifier, Power, 2W
5.0—8.5 GHz
M/A-COM Products
Final:
Rev E
APGM0021
YWWXXX
Figure 6. CR-15 Package Dimensions
The CR-15 is a high frequency, low thermal resistance package. The package consists of a
cofired ceramic construction with a copper-tungsten base and iron-nickel-cobalt leads. The finish
consists of electrolytic gold over nickel plate.
4
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
volume is not guaranteed.
information contained herein without notice.
MAAPGM0021
Amplifier, Power, 2W
5.0—8.5 GHz
M/A-COM Products
Final:
Rev E
121Ω
V
GG
0.1
μF
0.1
μF
V
DD
100 pF
100 pF
APGM0021
YWWXXX
RF
IN
RF
OUT
100 pF
100 pF
Pin Number
1
2
3
4
5
6
7
8
RF Designator
No Connection
V
GG
RF IN
V
GG
No Connection
No Connection
V
DD
RF OUT
V
DD
No Connection
Figure 7. Recommended Bias Configuration
9
10
Assembly Instructions:
This flange mount style package provides a robust interface between a highly integrated GaAs MMIC device and a circuit board
which may be assembled using conventional surface mount techniques. A thin shim made of a thermally and electrically
conductive, ductile material should be used prior to installation of the CR-15 to improve the thermal and electrical performance of
the package to housing interface. Refer to
M/A-COM Application Note #M567*
for more information .
For applications where surface mount components are to be installed after the CR-15 installation, this package will not be
damaged when subjected to typical convection or IR oven reflow profiles. Refer to
M/A-COM Application Note #M538*
for
maximum allowable reflow time and temperature. Alternatively, the package leads may be individually soldered. Whether an iron
or hot gas soldering equipment is used, care should be taken to insure that the temperature is well controlled and electric static
discharge (ESD) safe.
* Application Notes can be found by going to M/A-COM’s web page (http://www.macom.com) and selecting “Application Notes”.
Biasing Notes:
♦
♦
5
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
volume is not guaranteed.
The 100pF bypass capacitors must be placed as close to the V
GG
and V
DD
pins as possible
(recommended < 100 mils).
A negative bias must be applied to V
GG
before applying a positive bias to V
DD
to prevent damage to the amplifier.
information contained herein without notice.
