Amplifier, Distributed Power
4.0—18.0 GHz
Features
♦
♦
♦
♦
0.5 Watt Saturated Output Power Level
Variable Drain Voltage (5-10V) Operation
GaAs MSAG™ Process
Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
MAAPGM0052-DIE
903210 —
Preliminary Information
Description
The MAAPGM0052-Die is a 2-stage distributed power amplifier with
on-chip bias networks. This product is fully matched to 50 ohms on
both the input and output. It can be used as a power amplifier stage
or as a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and
highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufac-
turing processes, planar processing of ion implanted transistors,
multiple implant capability enabling power, low-noise, switch and
digital FETs on a single chip, and polyimide scratch protection for
ease of use with automated manufacturing processes. The use of
refractory metals and the absence of platinum in the gate metal
formulation prevents hydrogen poisoning when employed in her-
metic packaging.
Primary Applications
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50Ω, V
DD
= 8V, I
DQ
≈
500 mA
2
, P
in
= 17 dBm, Rg
≈
100Ω
Parameter
Bandwidth
Output Power
1dB Compression Point
Small Signal Gain
Noise Figure
Input VSWR
Output VSWR
Gate Supply Current
Drain Supply Current
1.
2.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Symbol
f
P
OUT
P1dB
G
NF
VSWR
VSWR
I
GG
I
DD
Typical
4.0-18.0
26.0
25
13
6.0
1.4:1
1.5:1
4
600
Units
GHz
dBm
dBm
dB
dB
mA
mA
T
B
= MMIC Base Temperature
Adjust V
GG
between –2.4 and –1.0V to achieve I
DQ
indicated.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Distributed Power
4.0—18.0 GHz
Maximum Operating Conditions
3
Parameter
Input Power
Drain Supply Voltage
Gate Supply Voltage
Quiescent Drain Current (No RF, 40% Idss)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
Storage Temperature
Die Attach Temperature
Symbol
P
IN
V
DD
V
GG
I
DQ
P
DISS
T
J
T
STG
Absolute Maximum
22.0
+12.0
-3.0
630
4.8
180
-55 to +150
310
MAAPGM0052-DIE
903210 —
Preliminary Information
Units
dBm
V
V
mA
W
°C
°C
°C
3. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Drain Supply Voltage
Gate Supply Voltage
Input Power
Junction Temperature
Thermal Resistance
MMIC Base Temperature
Symbol
V
DD
V
GG
P
IN
T
J
Θ
JC
T
B
18.6
Note 4
Min
4.0
-2.4
Typ
8.0
-1.8
17.0
Max
10.0
-1.0
20.0
150
Unit
V
V
dBm
°C
°C/W
°C
4. Maximum MMIC Base Temperature = 150°C —Θ
JC
* V
DD
* I
DQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply V
GG
= -2 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 8 V.
3. Adjust
V
GG
to set I
DQ
.
4. Set RF input.
5.
Power down sequence in reverse. Turn V
GG
off
last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Distributed Power
4.0—18.0 GHz
50
45
40
5V
8V
10V
MAAPGM0052-DIE
903210 —
Preliminary Information
6
Gain
Input VSWR
Output VSWR
5
20
15
Output Power (dBm)
35
30
25
20
15
10
5
0
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
4
10
3
5
2
0
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
1
Frequency (GHz)
Figure 1. Output Power vs. Frequency and Drain Voltage at P
in
=15dBm.
Frequency (GHz)
Figure 2. Small Signal Gain and VSWR at V
D
=5V.
50
45
40
35
30
25
20
15
10
5
0
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
5V
8V
10V
50
45
40
35
30
25
20
15
10
5
0
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
5V
8V
10V
Frequency (GHz)
Figure 3. Saturated Output Power vs. Frequency and Drain Voltage.
Frequency (GHz)
Figure 4. 1dB Compression Point vs. Frequency and Drain Voltage.
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Distributed Power
4.0—18.0 GHz
50
45
40
35
30
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
1
2
3
4
5
6
7
8
9
10
11
12
MAAPGM0052-DIE
903210 —
Preliminary Information
6GHz
10GHz
15GHz
18GHz
6GHz
10GHz
15GHz
18GHz
13
14
15
16
17
18
19
20
Input Power (dBm)
Figure 5. Output Power vs. Input Power and Frequency at V
D
=8V.
Input Power (dBm)
Figure 6. RF Drain Current vs. Input Power and Frequency at V
D
=8V.
20
18
16
14
5V Gain
5V NF
8V Gain
8V NF
10V Gain
10V NF
20
18
16
14
12
10
8
6
4
2
0
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Gain (dB)
12
10
8
6
4
2
0
Frequency (GHz)
Figure 7. Gain and Noise Figure vs. Frequency and Drain Voltage at 25% I
DSS
.
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Noise Figure (dB)
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Distributed Power
4.0—18.0 GHz
Mechanical Information
Chip Size: 3.000 x 3.000 x 0.075 mm
0.137mm
MAAPGM0052-DIE
903210 —
Preliminary Information
(118 x 118 x 3 mils)
3.000mm
3.000mmm
2.838mm
GN D:G
VD
GND:G
GND:G
OUT
GND:G
2.268mm
GND:G
GND:G
.0467mm
IN
VG_B
GND:G
GND :G
GND:G
0
0
1.744mm
2.843mm
Figure 8. Die Layout
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Bond Pad Dimensions
Pad
RF In and Out
DC Drain Supply Voltage VDD
DC Gate Supply Voltage VG_B
Size (μm)
100 x 150
150 x 150
150 x 150
Size (mils)
4x6
6x6
6x6
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
G DN G
:
G ND:G
5
